EPR and optical study of oxygen and zinc vacancies in electron-irradiated ZnO

Kappers, L.A.; Gilliam, O. R.; Evans, S. M.; Halliburton, L. E.; Giles, N. C.

doi:10.1016/j.nimb.2008.03.146

Cited by 88 publications

(56 citation statements)

References 23 publications

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“…However, high-energy electron irradiation in such nondegenerate samples produces EPR lines known to be due to V Zn and also a strong photoluminescence band at 1.8 eV, attributed to shallowdonor-V Zn pair (DAP) recombination [25]. Our present, unannealed, Ga-doped sample also has a dominant peak near 1.8 eV, as shown in E (eV) CL intensity (arb.…”

Section: Discussionmentioning

confidence: 53%

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Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO

et al. 2011

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Self-compensation, the tendency of a crystal to lower its energy by forming point defects to counter the effects of a dopant, is here quantitatively proven. Based on a new theoretical formalism and several different experimental techniques we demonstrate that the addition of 1.4 x 10 21 -cm -3 Ga donors in ZnO causes the lattice to form 1.7 x 10 20 -cm -3 Zn-vacancy acceptors. The calculated V Zn formation energy of 0.2 eV is consistent with predictions from density functional theory. Our formalism is of general validity and can be used to investigate self-compensation in any degenerate semiconductor material.2

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Section: Discussionmentioning

confidence: 53%

“…The PAS-determined concentrations of [24]. Indeed, these bands are not strong in most as-grown, nondegenerate ZnO samples, which instead are dominated in the deep region by a green band at 2.4 -2.5 eV [25].…”

Section: Discussionmentioning

confidence: 94%

Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO

et al. 2011

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“…The narrow EPR signal having a g-value of 1.96 can be assigned to oxygen vacancies formed in the ZnO crystallites [47][48][49]. In general, this signal is common for bulk ZnO ceramics and powders and will be observed in nanocrystals with diameters larger than 20 nm, due to the random orientations of the nanocrystals [50]. To study the temperature effect on the magnetic properties of the annealed Zn 1−x Ni x O samples, the EPR spectra obtained at different temperatures for x = 0.25, shown in Fig.…”

Section: Electron Paramagnetic Resonance (Epr)mentioning

confidence: 99%

Annealing and Ni content effects on EPR and structural properties of Zn_1–xNi_xO aerogel nanoparticles

Sayari

Mır

2017

Materials Science-Poland

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Zn 1−x Ni x O aerogel nanopowders with nickel concentration in the range of 0.05 x 0.25, were synthesized by the sol-gel processing technique and post-annealed in air at 500°C. Structural, vibrational, thermal and magnetic properties of the as-prepared and annealed Zn 1−x Ni x O powdered samples were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman scattering, thermal gravimetric analysis (TGA) and electron paramagnetic resonance (EPR) spectroscopy. In addition to the ZnNiO phase, XRD analysis revealed the formation of a secondary NiO phase when the Ni content was greater than or equal to 10 %. The TEM images confirm that the particle size is in the range of 20 nm to 40 nm, in accordance with XRD results, and the particles are well dispersed. Raman scattering measurements confirm the wurtzite structure of the synthesized Zn 1−x Ni x O nanopowders and show that intrinsic host-lattice defects are activated when Ni 2+ ions are substituted to the Zn sites. Room temperature ferromagnetic order was observed in all of the samples and was strongly dependent on the Ni content and thermal annealing. These results indicate that the observed room temperature ferromagnetism in ZnNiO may be attributed to the substitutional incorporation of Ni at Zn sites.

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“…The majority of investigators believe that, in undoped ZnO, two bands are observed in green spectral range, one of which is related to native defects, while the other is caused by residual copper impurity [1,2]. Emission in the red spectral range which exhibited itself as a shoulder at the longwave side of orange emission [3,4] or as a separate band peaked at about 700 nm [4][5][6] was also reported. In yellow-orange spectral region, intense impurity-related PL bands peaked at 600 and 570 nm were found to appear due to doping with Li and Na accordingly [1,2,7].…”

Section: Introductionmentioning

confidence: 99%

About self-activated orange emission in ZnO

Маркевич¹

2015

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Nominally undoped ZnO ceramics were sintered in air and N 2 flow at 1000 °C. Room temperature photoluminescence (PL) spectra of the samples were measured and analyzed using Gaussian fitting. The self-activated orange PL band peaking at 610 nm was separated by Gaussian deconvolution. Based on the obtained results compared with some literature data, it has been concluded that the defects responsible for self-activated orange emission in ZnO are zinc vacancies.

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EPR and optical study of oxygen and zinc vacancies in electron-irradiated ZnO

Cited by 88 publications

References 23 publications

Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO

Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO

Annealing and Ni content effects on EPR and structural properties of Zn_1–xNi_xO aerogel nanoparticles

About self-activated orange emission in ZnO

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EPR and optical study of oxygen and zinc vacancies in electron-irradiated ZnO

Cited by 88 publications

References 23 publications

Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO

Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO

Annealing and Ni content effects on EPR and structural properties of Zn1–xNixO aerogel nanoparticles

About self-activated orange emission in ZnO

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Product

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Annealing and Ni content effects on EPR and structural properties of Zn_1–xNi_xO aerogel nanoparticles