EPL reticle technology

Katakura, Norihiro; Takahashi, Shinichi; Okada, Masashi; Shimizu, Sumito; Kawata, Shintaro

doi:10.1117/12.458254

Cited by 4 publications

(4 citation statements)

References 1 publication

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“…This is again an area where e-beam has an advantage over the advanced optical lithographies as relatively thick resist films with high etch resistance can be used enabling simpler integration. One of the primary differences with EPL technology over existing optical lithography is the need to stitch together the pattern from neighbouring sub-fields on the master mask pattern [6,8]. Stitching was checked on these modules and can be seen in figure 8.…”

Section: Imaging Resultsmentioning

confidence: 99%

“…As can be seen the FLASH and SRAM modules were kept side by side in one orientation and alternated in the other. It is also interesting to note that the chips are separated into two halves to allow for the central strut that adds to the mask stiffness [6]. The separation of the patterns will not be dealt with here but has been discussed at length in many places including [7].…”

Section: 1) Mask Data Preparationmentioning

confidence: 99%

“…However in the case of 'donut' type structures stencil masks require some means of supporting the pattern, fortunately this is not the case here where we are dealing with contacts. The basic substrate for the mask is an SOI wafer, this may also receive some treatment such as boron doping to help alleviate stress and so reduce Image Placement (IP) errors [6].…”

Section: Mask Manufacturementioning

confidence: 99%

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Device based evaluation of electron projection lithography

et al. 2005

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As we move technology further and further down the geometry scale we are coming upon imaging situations where our use of existing optical lithography is being questioned due to the lack of process margin in manufacturing lines. This is especially apparent in the imaging of contacts where memory devices, that generally have the densest arrays of these features, may no longer be able to print the desired features. To overcome this it is necessary to either modify the design, a very expensive and time consuming process, or find an imaging process capable of printing the desired features. Electron Projection Lithography (EPL) provides an option to print very small features with a large process margin.In this paper we detail the performance of both memory and logic based designs in an EPL process. We detail the manufacture and results of stencil mask manufacture. Data is also presented showing the imaging results (DOF, exposure latitude, pattern transfer) of features down to 50nm imaged on Nikon's EB1A tool.

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Section: Imaging Resultsmentioning

confidence: 99%

Section: 1) Mask Data Preparationmentioning

confidence: 99%

Section: Mask Manufacturementioning

confidence: 99%

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Device based evaluation of electron projection lithography

et al. 2005

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“…The other infrastructures for EPL are developing steadily. [5][6][7][8] In particular, resist and data post-processing systems are shifting to a practical evaluation phase. 9) …”

Section: Introductionmentioning

confidence: 99%

Nikon EB stepper: its system design and preliminary performance

et al. 2003

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Electron Projection Lithography (EPL) has a high potential for applicability beyond the ITRS 65 nm node, especially for contacts and gate layers. The concept of synchronization control of the Nikon EB stepper is explained. The reticle stage and the wafer stage are servo controlled to target positions individually. The residual stage position errors are compensated by the electron beam deflection control. The electron beam deflection is feed forward controlled using predicted stage position data from a subsystem called "Filter/Predictor". The performance of the stage position prediction of the Filter/Predictor is described. This paper also reports the performance of the first EB stepper tool, the NSR-EB1A, during its preliminary adjustment phase. Dynamic scanning and stitching exposure, which requires synchronization of both the beam deflection motion and the stage scanning motion, was realized. Dynamic resolution of 100 nm and dynamic subfield stitching accuracy of 25 nm (3σ) were obtained, and further improvement is expected.

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Fabrication of complete 8 in. stencil mask for electron projection lithography

Amemiya

Yamashita²,

Nakatsuka

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We fabricated an 8 in. stencil mask having the complementary pattern of the 70 nm rule system-on-chip device. The 8 in. stencil mask was realized from the development of a mask substrate fabricated by using the sputtering method to form a scattering silicon membrane and an intermediate stopper layer. The intermediate layer material, which functions as an etching stopper, was CrNx. This material has demonstrated high performance in stencil mask fabrication, which is described in detail. The stress in the CrNx could be controlled within Ϯ20 MPa by adjusting the deposition condition. The deposited silicon membrane stress could be easily adjusted in the range of 0-10 MPa. The etching selectivity, when the substrate backside etching was performed, was over 1000 under the low bias power. When the deep etching process was performed using SF 6 and CHF 3 etching gases for the mask pattern formation, the Si/CrNx etching selectivity was over 100 under the low bias power condition. The mask substrate, which is made up of a 2-m-thick deposited silicon membrane and 0.35-m-thick CrNx stopper layer, enabled an 8 in. stencil mask to be fabricated for use with electron projection lithography. In complementary mask split, we used ''M-Split'' which was developed by Selete and ISS as a pattern split software.

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EPL reticle technology

Cited by 4 publications

References 1 publication

Device based evaluation of electron projection lithography

Device based evaluation of electron projection lithography

Nikon EB stepper: its system design and preliminary performance

Fabrication of complete 8 in. stencil mask for electron projection lithography

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