Epitaxy of single crystalline PrO2 films on Si(111)

Weisemoeller, T.; Deiter, C.; Bertram, Florian; Gevers, S.; Giussani, A.; Zaumseil, P.; Schroeder, Thomas; Wollschläger, J.

doi:10.1063/1.2958227

Cited by 29 publications

(69 citation statements)

References 15 publications

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“…The model with two coexisting praseodymia species introduced in more detail in Ref. 16 is confirmed by a broader database here for different samples annealed at different temperatures. PrO 2−␦ has a bigger lattice constant compared to PrO 2 due to lower average ionization of the Pr atoms and thus larger ion radius, as proved for bulk praseodymia PrO x of different stoichiometries and with increasing lattice constants from x =2 to x = 1.5 due to periodically ordered oxygen vacancies.…”

Section: Xrd and Gixrdsupporting

confidence: 55%

“…A vertical but not horizontal ordering of oxygen vacancies was reported in Ref. 16. The characteristic peak for this ordering of oxygen vacancies at L Ϸ 1.5 on the specular rod is also visible for some of the samples annealed at above 200°C and investigated here, although the intensity of this peak varies from sample to sample.…”

Section: Discussionmentioning

confidence: 71%

“…We previously introduced that these species are stoichiometric PrO 2 and under stoichiometric PrO 2−␦ . 16 The left subpeak is caused by the under stoichiometric PrO 2−␦ part with oxygen vacancies, and the right subpeak is caused by the stoichiometric PrO 2 part.…”

Section: Xrd and Gixrdmentioning

confidence: 99%

“…16 is necessary to obtain a decent fit for all samples annealed at more than 200°C. The vertical lattice spacing of h-Pr 2 O 3 is slightly expanded, as reported before for h-Pr 2 O 3 / Si͑111͒ after annealing in low pressure oxygen.…”

Section: Xrd and Gixrdmentioning

confidence: 99%

“…PrO 2 films on Si͑111͒ are obtained if h-Pr 2 O 3 films are annealed in 1 bar oxygen atmosphere, as we reported previously. 16 Here we will show that these films can be pre-pared by annealing at different temperatures between 300 and 700°C and that these films consist of two laterally coexisting praseodymia species, namely, PrO 2 and under stoichiometric PrO 2−␦ . We will also investigate the influence of the annealing temperature on the interface between oxide and substrate and on the homogeneity of the oxide film.…”

Section: Introductionmentioning

confidence: 99%

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Postdeposition annealing induced transition from hexagonal Pr2O3 to cubic PrO2 films on Si(111)

Weisemoeller

Bertram

Gevers

et al. 2009

Journal of Applied Physics

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Films of hexagonal praseodymium sesquioxide (h-Pr2O3) were deposited on Si(111) by molecular beam epitaxy and thereafter annealed in 1 atm oxygen at different temperatures, ranging from 100 to 700 °C. The films of the samples annealed at 300 °C or more were transformed to PrO2 with B-oriented Fm3¯m structure, while films annealed at lower temperatures kept the hexagonal structure. The films are composed of PrO2 and PrO2−δ species, which coexist laterally and are tetragonally distorted due to the interaction at the interface between oxide film and Si substrate. Compared to PrO2, PrO2−δ has the same cubic structure but with oxygen vacancies. The oxygen vacancies are partly ordered and increase the vertical lattice constant of the film, whereas the lateral lattice constant is almost identical for both species and on all samples. The latter lattice constant matches the lattice constant of the originally crystallized hexagonal praseodymium sesquioxide. That means that no long range reordering of the praseodymium atoms takes place during the phase transformation.

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Section: Xrd and Gixrdsupporting

confidence: 55%

Section: Discussionmentioning

confidence: 71%

Section: Xrd and Gixrdmentioning

confidence: 99%

Section: Xrd and Gixrdmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Postdeposition annealing induced transition from hexagonal Pr2O3 to cubic PrO2 films on Si(111)

Weisemoeller

Bertram

Gevers

et al. 2009

Journal of Applied Physics

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X‐ray characterization of epi‐Ge/Pr₂O₃/Si(111) layer stacks by pole figures and reciprocal space mapping

Zaumseil

Giussani

Rodenbach

et al. 2009

Physica Status Solidi (a)

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An epi‐Ge/Pr2O3/Si(111) layer structure prepared by consecutive steps of epitaxial deposition and annealing is used to demonstrate the possibility of a complex characterization by combination of different X‐ray diffraction techniques. Especially pole figure measurements, reciprocal space mapping (RSM) and high resolution (HR) Θ/2Θ scans at selected inclined netplanes were successfully used to determine the in‐plane lattice orientation of the layers relative to the substrate, the strain state of all layers and the structural perfection of the epi‐Ge film. It was found that the major part of the epi‐Ge layer has the same type A stacking orientation as the Si substrate, but about 0.6% is of type B. The Pr2O3 buffer layer exhibits type B only. The strain state of oxide and epi‐Ge was determined, and a small difference in the lattice constant of type A and B epi‐Ge was found. Microtwins lying in inclined {111} planes were unambiguously identified by pole figure measurements as the dominating structural defects in the epi‐Ge layer. They cause a characteristic scattering pattern in reciprocal space maps. The proposed combination of X‐ray techniques allows a relatively fast, integral and non‐destructive analysis of heteroepitaxial semiconductor oxide semiconductor structures.

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Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

Schroeder

Giussani

Dąbrowski

et al. 2009

Phys. Status Solidi (c)

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Engineered Si wafer systems present an important materials science approach to further improve the performance of Si‐based micro‐ and nanoelectronics. This is due to the potential to integrate alternative semiconductor layers on the mature Si wafer technology platform which are otherwise too expensive or even impossible to grow in bulk form in the required quality and quantity. Ge is attracting increasing research interest because it is for example a promising material for high mobility channel CMOS technologies as well as a mediator material to achieve the manufacturing of III‐V/Si hybrid devices. The integration of Ge on Si wafers is today either achieved by a combination of layer transfer and wafer bonding techniques or by a sequence of subsequent, epitaxial thin film deposition growth steps. In the latter case, the traditional approach to integrate Ge layers of low defect densities is given by the use of compositionally graded SiGe heterostructures. As this approach suffers however from required SiGe buffer thicknesses on the micrometer scale, making integrated circuit processing difficult, research on the development of innovative buffer heteroepitaxy approaches is intensively pursued. A new interesting class of buffer materials with a high degree of flexibility is given by oxide heterostructures. Using the integration of single crystalline Si and Ge on the Si(111) material platform via oxide heterostructures as an example, the flexibility of engineered oxide heterostructures to control important epitaxy parameters is demonstrated. In this study, epitaxial Si(111) and Ge(111) layers were grown on cubic Y2O3(111)/cubic Pr2O3(111)/Si(111) and Pr2O3(111)/Si(111) support systems, respectively. The structural properties of the Si‐on‐Insulator (SOI) and Ge‐on‐Insulator (GOI) heterostructures were characterized in detail by a combination of laboratory‐ and synchrotron‐based methods. As main result, both the epitaxial Si(111) and Ge(111) films were shown to be atomically smooth and single crystalline (i.e. free of stacking twins). Defect engineering approaches need to be applied in future to reduce stacking faults (e.g. microtwins) which are identified as the major defect mechanism in the epitaxial Si(111) and Ge(111) films. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Epitaxy of single crystalline PrO2 films on Si(111)

Cited by 29 publications

References 15 publications

Postdeposition annealing induced transition from hexagonal Pr2O3 to cubic PrO2 films on Si(111)

Postdeposition annealing induced transition from hexagonal Pr2O3 to cubic PrO2 films on Si(111)

X‐ray characterization of epi‐Ge/Pr₂O₃/Si(111) layer stacks by pole figures and reciprocal space mapping

Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

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Epitaxy of single crystalline PrO2 films on Si(111)

Cited by 29 publications

References 15 publications

Postdeposition annealing induced transition from hexagonal Pr2O3 to cubic PrO2 films on Si(111)

Postdeposition annealing induced transition from hexagonal Pr2O3 to cubic PrO2 films on Si(111)

X‐ray characterization of epi‐Ge/Pr2O3/Si(111) layer stacks by pole figures and reciprocal space mapping

Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

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X‐ray characterization of epi‐Ge/Pr₂O₃/Si(111) layer stacks by pole figures and reciprocal space mapping