Epitaxy of diamond on silicon

Diamond deposition by chemical vapor deposition process: Study of the bias enhanced nucleation step

“…We can note that this evolution corresponds to a graduated covering of the substrate, but this one is not totally covered at the end of the experiment. These variations of the bias current have been experimentally observed previously by different authors, 25,26,28 and have been described assuming that they were due to the electron emission variations of the cathode in connection with the formation of diamond particles, and their degradation. 28 As a matter of fact, the progression of the nucleation front ͑in a concentric way or not͒ leads to an increase in the effective diamond surface which is able to emit electrons owing to the electric field and/or the ionic bombardment.…”

“…The last step, which is characterized by a decrease and then by a stabilization in the bias current, can be associated with a lowering of the capacity of diamond crystals to emit electrons. This decrease is associated with the diamond damage ͑conversion of diamond into nondiamond phases͒ that some researches ascribe to an ionic bombardment due to the bias plasma 15,25,28 and to an electron emission. 33 Moreover, we can think that the variation of the effective diamond surface during particle coalescence and film thickening induces a modification of the electron emission as suggested by Lee et al 35 It is also possible that the thickening of the film induces a change of the surface temperature because diamond has a high thermal conductivity.…”

“…23,25,26 Some studies clearly reveal the heterogeneous feature of this last discharge and the consequences on elaborated films. [23][24][25][26][27] Moreover, precise study of this step is all the more difficult because it is poorly reproducible [26][27][28] and probably depends on the nature and geometry of various reactor parts. Concerning these two points, the studies carried out by Stöckel et al 25 and by Dieguez 14 are particularly interesting.…”

Relationship between the orientation of texture and heteroepitaxy of diamond and related materials films on silicon single crystal and the valence electron structure of the interface

“…According to refs. [8,[15][16][17][18][19][20][21][22][23][24], when the diamond films were deposited on the (100) crystal plane of silicon substrate, all the obtained films had the highly oriented (100) crystal plane of diamond or the epitaxial (100) crystal plane of diamond. While according to refs.…”

Oriented diamond growth on silicon (111) using a solid carbon source

“…To date, many researchers using the MPCVD are capable of producing oriented diamond on silicon. [3][4][5][6][7][8] Although hot filament chemical vapor deposition ͑HFCVD͒ was first used to grow diamond on nondiamond substrate in 1982, 9 it was not until 1995 that Chen et al 10 reported oriented diamond growth on silicon by a similar biasing technique in a HFCVD system. Nevertheless, the mechanism of this bias-assisted nucleation is still contentious.…”