Epitaxially grown semi-vertical and aligned GaTe two dimensional sheets on ZnO substrate for energy harvesting applications

Chen, Zuxin; Chu, Sheng; Chen, Jiapeng; Chen, Hao; Zhang, Jingtao; Ma, Xiaoxue; Li, Qiuguo; Chen, Xuechen

doi:10.1016/j.nanoen.2018.11.015

Cited by 27 publications

(27 citation statements)

References 45 publications

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“…Layered two-dimensional (2D) group III metal chalcogenides (MCs) (GaSe, GaTe, InSe, and others) are still of strong interest for the development of novel high-performance semiconductor devices due to their unique electronic and optical properties [ 1 , 2 , 3 ]. In particular, these materials have attracted great attention for the fabrication of field-effect transistors [ 4 ], solar cells [ 5 , 6 ], high-efficient photodetectors, and gas sensing devices [ 7 , 8 ]. InSe has significant potential for using in thermoelectric applications [ 9 ].…”

Section: Introductionmentioning

confidence: 99%

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

et al. 2020

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Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a difficult task. This paper reports on MBE growth of GaSe, InSe, and GaTe layers and related heterostructures on GaAs(001) substrates by using a Se valve cracking cell and group III metal effusion cells. The sophisticated self-consistent analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data was used to establish the correlation between growth conditions, formed polytypes and additional phases, surface morphology and crystalline structure of the III–VI 2D layers. The photoluminescence and Raman spectra of the grown films are discussed in detail to confirm or correct the structural findings. The requirement of a high growth temperature for the fabrication of optically active 2D layers was confirmed for all materials. However, this also facilitated the strong diffusion of group III metals in III–VI and III–VI/II–VI heterostructures. In particular, the strong In diffusion into the underlying ZnSe layers was observed in ZnSe/InSe/ZnSe quantum well structures, and the Ga diffusion into the top InSe layer grown at ~450 °C was confirmed by the Raman data in the InSe/GaSe heterostructures. The results on fabrication of the GaSe/GaTe quantum well structures are presented as well, although the choice of optimum growth temperatures to make them optically active is still a challenge.

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Section: Introductionmentioning

confidence: 99%

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

et al. 2020

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“…[40][41][42] Wang et al [43] reported the application of multilayer GaTe in phototransistors by calculating the transport properties. Additionally, the 2D GaTe [44] nanosheets prepared by chemical vapor deposition (CVD) growth method can further construct a solar cell based on ZnO substrate, which achieves a conversion efficiency (PCE) of 6.64%. The InSe/GaTe vdW heterobilayer (HBL) [45] can serve as a potential visible-lightdriven photocatalyst for water splitting to produce hydrogen, which notably improves the photocatalytic performance over that of isolated InSe and GaTe monolayers.…”

Section: Introductionmentioning

confidence: 99%

Electronic and Optical Properties of Novel Graphene‐Like InTe Monolayer: First Principle Calculations

Liao

Liu

Yuan

et al. 2020

Crystal Research and Technology

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Inspired by the research on exotic two‐dimensional (2D) carbon nanomaterials, that is, graphene, monolayer group‐IIIA chalcogenide compounds have broad application prospects in the field of material science and device physics. The structure characteristics and electronic and optical properties of the graphene‐like InTe monolayer are calculated and discussed in this work. It is found that the two sides of InTe monolayer are the same elements with the same electronegativity, and its charge distribution is very uniform. The band structure indicates that the InTe monolayer exhibits an indirect‐band gap of 1.286 eV. It is also noted that the absorption of InTe monolayer extends from the ultraviolet region to the visible region, reflecting its ability to capture light in a wide spectrum. Additionally, the absorption coefficient of InTe monolayer in the ultraviolet is up to 10−5 cm–1, which indicates that InTe has certain advantages in the application of ultraviolet detectors and photovoltaic absorption devices. Therefore, the present work provides a theoretical foundation for the design of electronic and optoelectronic device based on InTe, and further provides a favorable guidance for the practical application of these materials.

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“…We synthesize GaTe nanostructures using a simple PVT process as described in the experimental section. Although most recent studies report the physical-vapor-deposition (PVD) growth of GaTe layer samples using GaTe powder as the precursor [ 20 , 27 , 28 ]. Considering to the high melting point of GaTe (824 °C), using the low melting point materials: gallium (mp: 30 °C) and tellurium (mp: 450 °C) as evaporation source not only provides a steady supply of Ga and Te vapor pressure but also allows the precise morphology control of the growth of GaTe 1D nanowires and 2D nanosheets.…”

Section: Resultsmentioning

confidence: 99%

Morphology-Controlled Vapor Phase Growth and Characterization of One-Dimensional GaTe Nanowires and Two-Dimensional Nanosheets for Potential Visible-Light Active Photocatalysts

Tien

Shih

2021

Nanomaterials

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Gallium telluride (GaTe) one-dimensional (1D) and two-dimensional (2D) materials have drawn much attention for high-performance optoelectronic applications because it possesses a direct bandgap for all thickness. We report the morphology-controlled vapor phase growth of 1D GaTe nanowires and 2D GaTe nanosheets by a simple physical vapor transport (PVT) approach. The surface morphology, crystal structure, phonon vibration modes, and optical property of samples were characterized and studied. The growth temperature is a key synthetic factor to control sample morphology. The 1D GaTe single crystal monoclinic nanowires were synthesized at 550 °C. The strong interlayer interaction and high surface migration of adatoms on c-sapphire enable the assembly of 1D nanowires into 2D nanosheet under 600 °C. Based on the characterization results demonstrated, we propose the van der Waals growth mechanism of 1D nanowires and 2D nanosheets. Moreover, the visible-light photocatalytic activity of 1D nanowires and 2D nanosheets was examined. Both 1D and 2D GaTe nanostructures exhibit visible-light active photocatalytic activity, suggesting that the GaTe nanostructures may be promising materials for visible light photocatalytic applications.

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Epitaxially grown semi-vertical and aligned GaTe two dimensional sheets on ZnO substrate for energy harvesting applications

Cited by 27 publications

References 45 publications

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

Electronic and Optical Properties of Novel Graphene‐Like InTe Monolayer: First Principle Calculations

Morphology-Controlled Vapor Phase Growth and Characterization of One-Dimensional GaTe Nanowires and Two-Dimensional Nanosheets for Potential Visible-Light Active Photocatalysts

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