Epitaxial ZnO piezoelectric layer on SiO₂/Mo solidly mounted resonator fabricated using epitaxial Au sacrificial layer

Abstract

In SMR type of BAW resonator, it is difficult to fabricate single crystalline piezoelectric thin films in a bottom-up process due to the amorphous SiO2 in the low acoustic impedance layer of acoustic Bragg reflector. In this study, single crystalline ZnO piezoelectric layer on amorphous SiO2/polycrystalline Mo acoustic Bragg reflector is fabricated using a wet etching process of epitaxial Au sacrificial layer. Epitaxial growth of ZnO was confirmed by XRD pole figure and TEM electron diffraction pattern. Resonance frequency of 1.3 GHz of epitaxial ZnO SMR was observed using network analyzer.