Epitaxial Volmer-Weber growth modelling

Coppeta, Raffaele; Ceric, H.; Karunamurthy, Balamurugan

doi:10.1109/sispad.2013.6650570

Cited by 2 publications

(2 citation statements)

References 9 publications

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“…Therefore, the average stress in the films should be described as the result of competition between tensile and compressive stress contributions generated continuously and simultaneously during growth of the AlN films with a typical grain size up to several hundreds of nm. Such an approach was not applied so far to description of the epitaxial Volmer-Weber growth of AlN films, except for the analysis of stress evolution in AlN/Si heteroepitaxial films by Sheldon et al [6] and Coppeta et al [36] in the relatively narrow ranges of growth parameters used. Below we analyze the stress evolution during all successive PA MBE growth stages of AlN/c-Al 2 O 3 templates at different growth modes and the wide range of growth conditions considered above, using this kinetic approach.…”

Section: Kinetic Approach To Description Of Stress Evolution During A...mentioning

confidence: 99%

Stress control in thick AlN/c-Al₂O₃ templates grown by plasma-assisted molecular beam epitaxy

Koshelev¹,

Нечаев²,

Brunkov³

et al. 2021

Semicond. Sci. Technol.

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Stress evolution was studied in up to ~3 µm thick AlN templates, comprising ∼65 nm thick AlN nucleation layers (NLs) and thick buffer layers (BLs), grown using different growth modes and conditions by plasma-assisted molecular beam epitaxy (PA MBE) on c-Al 2 O 3 . Growth of both the NL and BL in a standard PA MBE mode at N-rich conditions (at flux ratio Al/N 2 * ∼ 0.5) led to instant generation of a relatively high tensile stress (∼1.5 GPa) which is maintained throughout the entire growth. On the contrary, NLs, grown using a migration-enhanced epitaxy (MEE), demonstrated a transition from the initial compressive stress to stress-free growth, which is usually observed in the Volmer-Weber films. Further growth of thick AlN BLs on the MEE-NLs at various Al/N 2 * ratios revealed a wide variety of stress evolution processes. The BL growth by using metal-modulated epitaxy (MME) at Me-rich conditions with Al/N 2 * ∼ 1.33 led to a gradual decrease in the initial compressive stress in the 2D AlN layers, whereas standard PA MBE growth of 3D BL at N-rich conditions (Al/N 2 * ∼ 0.92) exhibited a fast transition from the initial compressive stress to tensile stress. Moreover, we succeeded in achieving the quasi-stress-free growth of a 3.1 µm thick AlN BL using the MME growth mode at the optimum flux ratio Al/N 2 * = 1.05. These results were compared with the results of other authors and explained using a kinetic approach to description of stress evolution during PA MBE of AlN/c-Al 2 O 3 templates, taking into account several simultaneously acting competitive mechanisms of continuous generation of tensile and compressive stresses.

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Section: Kinetic Approach To Description Of Stress Evolution During A...mentioning

confidence: 99%

Stress control in thick AlN/c-Al₂O₃ templates grown by plasma-assisted molecular beam epitaxy

Koshelev¹,

Нечаев²,

Brunkov³

et al. 2021

Semicond. Sci. Technol.

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“…However, due to the large migration barrier of Al atoms on the surface of NPSS, the growth mode of Al atoms follows the 3D Volmer-Weber growth mode. In the 3D Volmer-Weber growth mode, high-density dislocations can be generated in the AlN films during the merging of the three-dimensional islands, which can easily propagate upward into the epitaxial layer above [17][18][19][20][21][22][23]. In recent years, many researchers has put forward to use two-dimensional graphene as an insertion layer to epitaxial growth of AlN film.…”

Section: Introductionmentioning

confidence: 99%

High quality AlN film assisted by graphene/sputtered AlN buffer layer for deep-ultraviolet-LED

Ning

Zhang

et al. 2023

Nanotechnology

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The advantages of van der Waals epitaxial nitrides have become a research hot topic. It is worth noting that graphene plays an important role in the research of epitaxial AlN epitaxial layer. In this work, we demonstrate a method to obtain high-quality and low-dislocation AlN epitaxial layer by combining graphene and sputtered AlN as the nucleation layer on the C-sapphire substrate via metal organic chemical vapor deposition (MOCVD), and successfully fabricated a 277 nm AlGaN-based deep ultraviolet light emitting diode (DUV-LED) based on the obtained AlN epitaxial layer. The presence of graphene promotes the stress release of AlN. Compared with the AlN epitaxial layer directly grown on graphene/sapphire substrate, the exist of sputtered AlN/graphene nucleation layer facilitates most of the threading dislocations in AlN can annihilate each other in the range of about 100 nm. Thus, as grown AlN epitaxial layer shows the decreasing of the screw dislocation from 2.31 × 109 to 2.08 × 108 cm-2 significantly. We manufacture an DUV-LED with 277nm emission wavelength by using high-quality AlN films, which shows that magnitude of the leakage current is only on the order of nanoamperes and the forward turn on voltage is 3.5 V at room temperature. This study provides a meaningful strategy to achieve high-quality AlN film and high-performance DUV-LED.

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Epitaxial Volmer-Weber growth modelling

Cited by 2 publications

References 9 publications

Stress control in thick AlN/c-Al₂O₃ templates grown by plasma-assisted molecular beam epitaxy

Stress control in thick AlN/c-Al₂O₃ templates grown by plasma-assisted molecular beam epitaxy

High quality AlN film assisted by graphene/sputtered AlN buffer layer for deep-ultraviolet-LED

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Epitaxial Volmer-Weber growth modelling

Cited by 2 publications

References 9 publications

Stress control in thick AlN/c-Al2O3 templates grown by plasma-assisted molecular beam epitaxy

Stress control in thick AlN/c-Al2O3 templates grown by plasma-assisted molecular beam epitaxy

High quality AlN film assisted by graphene/sputtered AlN buffer layer for deep-ultraviolet-LED

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Product

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Stress control in thick AlN/c-Al₂O₃ templates grown by plasma-assisted molecular beam epitaxy

Stress control in thick AlN/c-Al₂O₃ templates grown by plasma-assisted molecular beam epitaxy