Epitaxial TiN(001) wetting layer for growth of thin single-crystal Cu(001)

Chawla, J. S.; Zhang, X. Y.; Gall, Daniel

doi:10.1063/1.3624773

Cited by 38 publications

(20 citation statements)

References 35 publications

(35 reference statements)

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“…The data for the latter has already been reported in Ref. 38, where we have shown that the wetting of Cu on TiN(001) yields a 4 Â higher crystalline quality and a 9 Â lower surface roughness than for Cu grown on MgO(001), similar to the Ag results in this study. The plotted q in Fig.…”

Section: Discussionsupporting

confidence: 91%

“…6 scattered electron wave. 38 Fitting of the data points provides values for p 1 of 0.6 6 0.2 and 0.8 6 0.1 at the Cu-vacuum and Ag-vacuum boundaries, respectively. The smaller p 1 value for the Cu-vacuum boundary is primarily attributed to the $2Â larger atomic roughness of the Cu surface, as observed by the XRR measurements (not shown) for layers with d 55 nm.…”

Section: Discussionmentioning

confidence: 95%

“…27 We note here that electron scattering at grain boundaries and surfaces is not perfectly additive. 38 Consequently, when d is reduced such that surface scattering becomes an increasingly dominant contribution, Dq is no longer expected to be T-independent, because surface scattering is affected by the T-dependent mean free path. However, this effect cannot be conclusively observed from our data, since the experimental uncertainty and the roughness effects are comparable or larger than the expected deviation of $5% at room temperature.…”

Section: Discussionmentioning

confidence: 99%

“…However, this effect cannot be conclusively observed from our data, since the experimental uncertainty and the roughness effects are comparable or larger than the expected deviation of $5% at room temperature. 38 In the following, we discuss the resistivity data for the highest quality Ag(001) layers from this study, that is, Ag layers grown on TiN(001) buffer layers, and compare it to the corresponding data for epitaxial Cu(001) layers. Figure 6 shows the measured resistivity q versus layer thickness d for both single crystal Ag(001) and Cu(001) layers deposited on 2.5 nm TiN(001)/MgO(001) at T s ¼ 25 C with d ¼ 3.5-1380 nm and d ¼ 4-830 nm, respectively.…”

Section: Discussionmentioning

confidence: 99%

“…0021-8979/2012/111(4)/043708/10/$30.00 V C 2012 American Institute of Physics 111, 043708-1 Cu(001) by better wetting of Cu on TiN than MgO, yielding a lower crystalline defect density and a smoother surface for Cu(001)/TiN(001) than for Cu(001)/MgO(001). 38 Similarly, we envision that a TiN(001) interfacial layer between Ag(001) and MgO(001) lowers the tendency for 3D Ag nucleation, since the surface energy of Ag and MgO are both lower than that of TiN(001), which is 1.3 Jm À2 for the bulk stoichiometric compound, but even larger for the very common N-deficient TiN x surface. 39,40 The surface energy of Ag and TiN surfaces for the respective thin films may be slightly larger than for the corresponding bulk material, because surface energy for bulk conductors is minimized by charge depletion at the surface, which, however, is less energetically favorable in a thin film, especially with layer thicknesses approaching the electrostatic screening length.…”

Section: Introductionmentioning

confidence: 99%

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Epitaxial Ag(001) grown on MgO(001) and TiN(001): Twinning, surface morphology, and electron surface scattering

Chawla

Gall

2012

Journal of Applied Physics

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Morphology of TiN thin films grown on MgO (001) by reactive dc magnetron sputtering J. Vac. Sci. Technol. A 28, 912 (2010); 10.1116/1.3357303Oxygen-assisted control of surface morphology in nonepitaxial sputter growth of Ag Interdependence between stress, preferred orientation, and surface morphology of nanocrystalline TiN thin films deposited by dual ion beam sputtering Epitaxial Ag(001) layers were deposited on MgO(001) in order to study electron surface scattering. X-ray reflection indicates 3D layer nucleation with a high rms surface roughness of 1.0 nm for a layer thickness d ¼ 3.5 nm. X-ray diffraction shows that f111g twins form at d < 11 nm, followed by 2nd generation twinning for 11 nm < d < 120 nm. Increasing the growth temperature from 25 to 150 C suppresses 2nd generation twinning and reduces the twin density by 2 orders of magnitude. In situ deposition of epitaxial 2.5-nm-thick TiN(001) underlayers prior to Ag deposition results in twin-free single-crystal Ag(001) with 10 Â smoother surfaces for d ¼ 3.5 nm. This is attributed to a better wetting on the higher energy TiN(001) than MgO(001) surface, resulting in the absence of 3D nuclei with exposed f111g facets, which facilitate twin nucleation. The twinned Ag/MgO layers have a higher resistivity q than the single crystal Ag/TiN layers at both 298 and 77 K, due to electron scattering at grain and twin boundaries. The q for single-crystal Ag layers increases with decreasing d, which is well explained with known surface scattering models and provides specularity parameters for the Ag-vacuum and the Ag-air interfaces of p ¼ 0.8 6 0.1 and 0.4 6 0.1, respectively. A comparison with corresponding epitaxial Cu(001) layers shows that q Ag < q Cu for d > 50 nm, consistent with known bulk values. However, q Ag > q Cu for d < 40 nm. This is attributed to the larger electron mean free path for electron-phonon scattering and a correspondingly higher resistivity contribution from surface scattering in Ag than Cu. In contrast, air exposure causes q Ag < q Cu for all d, due to diffuse scattering at the oxidized Cu surface and the correspondingly higher Cu resistivity.

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Section: Discussionsupporting

confidence: 91%

Section: Discussionmentioning

confidence: 95%

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Epitaxial Ag(001) grown on MgO(001) and TiN(001): Twinning, surface morphology, and electron surface scattering

Chawla

Gall

2012

Journal of Applied Physics

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Electrical Conduction in Metals and Semiconductors

Kasap

Koughia

Ruda

2017

Springer Handbook of Electronic and Photonic Materials

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Electrical transport through materials is a large and complex field, and in this chapter we cover only a few aspects that are relevant to practical applications. We start with a review of the semi-classical approach that leads to the concepts of drift velocity, mobility and conductivity, from which Matthiessen's Rule is derived. A more general approach based on the Boltzmann transport equation is also discussed. We review the conductivity of metals and include a useful collection of experimental data. The conductivity of nonuniform materials such as alloys, polycrystalline materials, composites and thin films is discussed in the context of Nordheim's rule for alloys, effective medium theories for inhomogeneous materials, and theories of scattering for thin films. We also discuss some interesting aspects of conduction in the presence of a magnetic field (the Hall effect). We present a simplified analysis of charge transport in semiconductors in a high electric field, including a modern avalanche theory (the theory of lucky drift). The properties of low-dimensional systems are briefly reviewed, including the quantum Hall effect.

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Thin Films

Gould¹,

Kasap²,

Ray³

2017

Springer Handbook of Electronic and Photonic Materials

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This chapter provides an extended introduction to the basic principles of thin-film technology, including deposition processes, structure, and some optical and electrical properties relevant to this volume. The material is accessible to scientists and engineers with no previous experience in this field, and contains extensive references to both the primary literature and earlier review articles. Although it is impossible to provide full coverage of all areas or of the most recent developments in this survey, references are included to enable the reader to access the information elsewhere, while the coverage of fundamentals will allow this to be appreciated. Deposition of thin films by the main physical deposition methods of vacuum evaporation, molecular-beam epitaxy and sputtering are described in some detail, as are those by the chemical deposition methods of electrodeposition, chemical vapour deposition and the Langmuir-Blodgett technique. Examples of structural features of some thin films are given, including their crystallography, larger-scale structure and film morphology. The dependence of these features on the deposition conditions are stressed, including those required for the growth of epitaxial films and the use of zone models in the classification of the morphological characteristics. The main optical properties of thin films are reviewed, including the use of Fresnel coefficients at media boundaries, reflectance and transmittance, matrix methods and 28.1

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Epitaxial TiN(001) wetting layer for growth of thin single-crystal Cu(001)

Cited by 38 publications

References 35 publications

Epitaxial Ag(001) grown on MgO(001) and TiN(001): Twinning, surface morphology, and electron surface scattering

Epitaxial Ag(001) grown on MgO(001) and TiN(001): Twinning, surface morphology, and electron surface scattering

Electrical Conduction in Metals and Semiconductors

Thin Films

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