1992
DOI: 10.1063/1.107547
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Epitaxial Pt(001), Pt(110), and Pt(111) films on MgO(001), MgO(110), MgO(111), and Al2O3(0001)

Abstract: We have grown epitaxial Pt films, both in oxidizing and nonoxidizing environments, using planar magnetron sputtering onto heated substrates. The out-of-plane orientation relationships we report are Pt(001)∥MgO(001), Pt(110)∥MgO(110), Pt(111)∥MgO(111), and Pt(111)∥Al2O3(0001). We also report a seeded epitaxy technique using Fe for lower temperature epitaxial growth of Pt(001)∥MgO(001).

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Cited by 125 publications
(50 citation statements)
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“…In our experiment Al 2 O 3 (0001) oriented substrates were used to promote formation of Pt fcc (111) buffer layer structure [18][19][20][21][22] and further (111) orientation of successive Fe/Pt bilayers. (0001) Al 2 O 3 surface morphology is well known to strongly depend on preparation procedure e.g.…”
Section: Substrate Preparation and Sample Growthmentioning
confidence: 99%
“…In our experiment Al 2 O 3 (0001) oriented substrates were used to promote formation of Pt fcc (111) buffer layer structure [18][19][20][21][22] and further (111) orientation of successive Fe/Pt bilayers. (0001) Al 2 O 3 surface morphology is well known to strongly depend on preparation procedure e.g.…”
Section: Substrate Preparation and Sample Growthmentioning
confidence: 99%
“…Due to the potentially disturbing ferromagnetic properties of FePt, we decided to use pure Pt as a seed layer for Cu growth, exhibiting a temperature dependent change in crystal structure from a (111) regime at ambient deposition temperatures to a (100)-oriented regime parallel to the substrate lattice in a temperature range above 950 K [33].…”
mentioning
confidence: 99%
“…The substrates were carefully cleaned in multiple cycles by organic solvents (acetone, isopropanol) and subsequently heated in the sputtering chamber at 970 K for 2 h to remove contaminations. To achieve the crystalline properties mentioned in [33], appropriate temperatures were applied during layer deposition. For the (111)-oriented Pt buffer (LTPt), a temperature of 650 K was chosen, while the (100)-oriented Pt (HTPt) was deposited at a temperature of 950 K to exclude any formation of (111) domains.…”
mentioning
confidence: 99%
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“…[44][45][46] MgO has the standard cubic rock salt crystal structure. MgO(001) substrates were selected for use in the high temperature codeposition experiments described here due to its previously demonstrated ability to grow W and WC epitaxially in magnetron sputtered films.…”
Section: Section 22: Magnesium Oxide (Mgo)mentioning
confidence: 99%