Epitaxial multi-component rare-earth oxide: A high-k material with ultralow mismatch to Si

Wang, Jinxing; Liu, Tianmo; Wang, Zhongchang; Bugiel, E.; Laha, Apurba; Watahiki, Tatsuro; Shayduk, Roman; Braun, Wolfgang; Fissel, A.; Osten, H. J.

doi:10.1016/j.matlet.2010.01.045

Cited by 8 publications

(3 citation statements)

References 21 publications

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“…The standard solid-state reaction remains the major processing route for these materials [2,4], although other non-conventional methods are currently applied, such as reverse-strike coprecipitation [17], mechanochemical [18], thermal decomposition [5,6,13,19e21], sol-gel processing [22e24], combustion synthesis [25], molecular beam epitaxy technique [26,27], and hydroxide fluxes [12]. The hydrothermal technology is currently applied by our research group to synthesize nanostructured materials with technological interest [28e34].…”

Section: Introductionmentioning

confidence: 99%

Structural and vibrational properties of phase-pure monoclinic NdLuO3 interlanthanides synthesized from nanostructured precursors

Soares

Siqueira

Moreira

et al. 2016

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Structural and vibrational properties of phase-pure monoclinic NdLuO3 interlanthanides synthesized from nanostructured precursors

Soares

Siqueira

Moreira

et al. 2016

Journal of Alloys and Compounds

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“…Rare earth mixed oxides can be obtained by various synthetic methods, such as combustion synthesis [18], molecular beam epitaxy technique [9], co-precipitation mixed oxalates [19], citrates [20], or hydroxides [21].…”

Section: Introductionmentioning

confidence: 99%

XRD, IR, and Raman investigations of structural properties of Dy_2‐xHo_x O₃ prepared by sol gel procedure

Mohamed

Fueß

2012

Cryst. Res. Technol.

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The Rare earth mixed oxides Dy 2-x Ho x O 3 (0.0 ≤ x ≤ 2.0) solid solution was synthesized by a sol-gel process. X-ray diffraction (XRD) data were collected and crystal structure and microstructure analyses were performed applying Rietveld refinement method. Infrared and Raman spectroscopy were used to define the microstructure and to locally probe the structure of the samples. The cationic distribution over the two nonequivalent sites 8b and 24d of the space group Ia3 is found to be randomly. The crystallite size and microstrain as well as Raman modes positions are influenced by Ho 3+ concentration. The apparent size is isotropic but significant anisotropy is found for the microstrain with its largest value along the crystallographic direction [h00]. Inspite the single phase solid solution confirmed by Rietveld analysis for all samples, Raman spectra detected the coexistence of two phases; cubic and distorted monoclinic of too small amount or highly disordered, i.e. amorphous like, to be detected by XRD. The result indicates the ability of Raman spectroscopy to detect minor phases in solid solutions.

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“…Lattice constant of cubic bixbyite lanthanum oxide 11.36 Å could be the closest to that of germanium (double germanium lattice constant 2d Ge ¼ 11.32 Å ). 9 Wang et al 22 studied the crystal structure of cubic bixbyite ternary gadolinium neodymium oxide with a neodymium content of 50%. 14 On the other hand, mismatch between c-axis oriented hexagonal lanthanum oxide (a ¼ 3.94 Å ) 13 and 111 oriented germanium is approximately 1.5% that should lead to compressive stress in the Ge layer because of its larger in-plane lattice constant.…”

Section: Introductionmentioning

confidence: 99%

Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111)

Dargis¹,

Arkun²,

Clark³

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Ternary and binary rare-earth oxides that are used as a template buffer, which accommodates the crystal lattice mismatch between substrate and a semiconductor layer, are discussed here. The oxides were grown on Si(111) substrates and exhibit the cubic bixbyite crystal structure. Stabilization of the cubic bixbyite structure of ternary erbium-neodymium oxide and lanthanum oxide was analyzed using structural investigation of the epitaxially grown oxides and ab initio density functional theory calculations. The authors demonstrate that despite the more energetically favorable hexagonal structure of bulk lanthanum oxide a pseudomorphic single crystal cubic lanthanum oxide layer grows under nonequilibrium conditions of a molecular beam epitaxy process on gadolinium oxide. Growth of hexagonal lanthanum oxide begins when the critical thickness of the layer is reached. Germanium was epitaxially grown on the cubic bixbyite lanthanum sesquioxide. Due to a higher surface energy, germanium starts to grow in the form of twinned islands on the oxide layer that later merge, forming a closed layer. X ray diffraction reveals mostly single crystal structure of the germanium layer with stacking twins located only at the interface with the lanthanum oxide layer.

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Epitaxial multi-component rare-earth oxide: A high-k material with ultralow mismatch to Si

Cited by 8 publications

References 21 publications

Structural and vibrational properties of phase-pure monoclinic NdLuO3 interlanthanides synthesized from nanostructured precursors

Structural and vibrational properties of phase-pure monoclinic NdLuO3 interlanthanides synthesized from nanostructured precursors

XRD, IR, and Raman investigations of structural properties of Dy_2‐xHo_x O₃ prepared by sol gel procedure

Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111)

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Epitaxial multi-component rare-earth oxide: A high-k material with ultralow mismatch to Si

Cited by 8 publications

References 21 publications

Structural and vibrational properties of phase-pure monoclinic NdLuO3 interlanthanides synthesized from nanostructured precursors

Structural and vibrational properties of phase-pure monoclinic NdLuO3 interlanthanides synthesized from nanostructured precursors

XRD, IR, and Raman investigations of structural properties of Dy2‐xHox O3 prepared by sol gel procedure

Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111)

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XRD, IR, and Raman investigations of structural properties of Dy_2‐xHo_x O₃ prepared by sol gel procedure