Epitaxial lift-off GaAs solar cell from a reusable GaAs substrate

Geelen, A. van; Hageman, P.R.; Bauhuis, G.J.; Rijsingen, P.C. van; Schmidt, P.; Giling, L.J.

doi:10.1016/s0921-5107(96)02029-6

Cited by 84 publications

(64 citation statements)

References 42 publications

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“…The major drawback of this method arises from the high surface roughness of the substrate due to the prolonged exposure to the HF etchant in addition to residues left on the substrate after the ELO process. [ 6,7 ] This prevents the direct reuse of the wafers and additional chemical mechanical polishing is required for the repreparation of the substrate surface to achieve the epi-ready condition. In addition to involving additional fabrication costs, this method also consumes tens of micrometers of material from the top surface of the substrate, which limits the potential number of wafer reuses.…”

Section: Doi: 101002/aenm201400589mentioning

confidence: 99%

A Repeatable Epitaxial Lift‐Off Process from a Single GaAs Substrate for Low‐Cost and High‐Efficiency III‐V Solar Cells

Choi

Kim

Heo

et al. 2014

Advanced Energy Materials

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The effects of epitaxial materials and solar cell design on the performance of solar cells grown by the multilayer approach are investigated. The novel solar cell structure with a p‐on‐n type configuration suggested exhibits improved uniformity in the photovoltaic performance because of the suppression of Zn diffusion. This approach provides routes to achieve further improvements and acts as a guideline for the commercialization of the multilayer technique.

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Section: Doi: 101002/aenm201400589mentioning

confidence: 99%

A Repeatable Epitaxial Lift‐Off Process from a Single GaAs Substrate for Low‐Cost and High‐Efficiency III‐V Solar Cells

Choi

Kim

Heo

et al. 2014

Advanced Energy Materials

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“…The cell showed good open circuit voltage V oc and short circuit current J sc values, but a relatively low FF due to a high series resistance. In the same year, using the large area liftoff approach, research at Radboud University Nijmegen showed a thin-film cell that also had proper V oc and J sc values, but with an even lower FF [28,29]. The efficiency was around 10%, compared to 24% for a wafer based cell with a similar layer structure.…”

Section: Thin-film Iii-v Cell Developmentmentioning

confidence: 99%

“…New designs for cells with more than 3 junctions require the use of thin-film cells in some form [27,59,60] either as a free standing thin-film cell or in combination with cells grown on different wafer materials through a layer transfer process. A basic method for obtaining a thin-film cell by etching/polishing of the wafer after growth is widely used [1,28,29], but this is an expensive method because the wafer, which has a large contribution in the total cell cost, is lost. Epitaxial lift-off offers the possibility of wafer reuse and is more and more maturing after being under investigation for more than 20 years, resulting in good quality cells and a stable process.…”

Section: Future Perspectivesmentioning

confidence: 99%

Thin-Film III–V Solar Cells Using Epitaxial Lift-Off

Bauhuis

Mulder

Schermer

2013

High-Efficiency Solar Cells

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Epitaxial lift-off is used to create thin-film III-V solar cells without sacrificing the GaAs wafer. It is based on selective etching of an AlAs release layer between the wafer and the cell structure using an HF solution. The wafer can be reused for subsequent deposition runs thereby reducing the cost of the cells. The thin-film cell can be transferred to any new carrier, e.g. glass, plastic, silicon or metal foil. Although epitaxial lift-off was first demonstrated in 1978, it took until the 1990s to make significant progress in understanding the process and devising new ways to increase the etch rate. The first single-junction epitaxial lift-off cells were made in 1996. Thin-film cells offer new cell applications based on their flexibility, low weight and possibility to deposit the cell structure in reverse order. Today the world record for single-junction cells is held by a thin-film GaAs cell, who's performance is partly based on the increased photonrecycling factor in cells with a backcontact acting as a mirror. Also state of the art tandem and inverted metamorphic thin-film cells have been demonstrated.

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“…The development of ELO was originally motivated by the need for cheaper substrates in the solar cell industry, since the original substrates can be re-used after the epilayer has been lifted o! [55,56]. The technique is also very promising for GaAs-on silicon optoelectronics [57] and the fabrication of e$cient light-emitting diodes [58].…”

Section: Epitaxial Lift-ow/substrate Removalmentioning

confidence: 99%

Photonic crystals in the optical regime â past, present and future

Krauss

Rue

1999

Progress in Quantum Electronics

443

141

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During the last decade, photonic crystals, also known as photonic microstructures or photonic bandgap structures, have matured from an intellectual curiosity concerning electromagnetic waves to a "eld with real applications in both the microwave and optical regime. In this review, we shall focus on progress and the prospects for semiconductor structures that mainly involve guided modes interacting with periodic structures, but we also evaluate alternative material systems and fabrication methods, e.g. those based on self-organisation. We shall go from basic concepts, via a discussion of the state of the art, to device applications. Naturally, the discussion of the applications will be more speculative, but we attempt to evaluate the real prospects o!ered by photonic crystals at optical frequencies while considering practical limitations. In doing so, we identify a variety of areas such as the combination of quantum dot light emitters with photonic crystals that seem particularly promising. We discuss the prospects for enhanced light}matter interactions in photonic crystals and the related material and design issues. Overall, the aim of this review is to introduce the reader to the concepts of photonic crystals, describe the state of the art and attempt to answer the question of what uses these peculiar structures may have.

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Epitaxial lift-off GaAs solar cell from a reusable GaAs substrate

Cited by 84 publications

References 42 publications

A Repeatable Epitaxial Lift‐Off Process from a Single GaAs Substrate for Low‐Cost and High‐Efficiency III‐V Solar Cells

A Repeatable Epitaxial Lift‐Off Process from a Single GaAs Substrate for Low‐Cost and High‐Efficiency III‐V Solar Cells

Thin-Film III–V Solar Cells Using Epitaxial Lift-Off

Photonic crystals in the optical regime â past, present and future

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Epitaxial lift-off GaAs solar cell from a reusable GaAs substrate

Cited by 84 publications

References 42 publications

A Repeatable Epitaxial Lift‐Off Process from a Single GaAs Substrate for Low‐Cost and High‐Efficiency III‐V Solar Cells

A Repeatable Epitaxial Lift‐Off Process from a Single GaAs Substrate for Low‐Cost and High‐Efficiency III‐V Solar Cells

Thin-Film III–V Solar Cells Using Epitaxial Lift-Off

Photonic crystals in the optical regime â past, present and future

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Product

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Photonic crystals in the optical regime â past, present and future