Epitaxial layer growth of Ag(111)-films on Si(100)

Hoegen, M. Horn‐von; Schmidt, Th.; Henzler, M.; Meyer, Gerhard; Winau, D.; Rieder, Karl–Heinz

doi:10.1016/0039-6028(95)00320-7

Cited by 34 publications

(24 citation statements)

References 13 publications

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“…10͒ so that contiguous films are obtained for Ag layers that are less than 10 ML thick, if they are grown at temperatures around 100 K. 10 The low-doped silicon substrates ͑1000 ⍀ cm at 300 K͒ are insulating at temperatures below 150 K. In addition, for Ag as an adsorbate, band bending effects cause a depletion of the space charge carriers 11 so that Ag is well isolated from the Si bulk under our experimental conditions below room temperature.…”

mentioning

confidence: 92%

Switchable nanometer contacts: Ultrathin Ag nanostructures on Si(100)

Gardinowski

Schmeidel

Pfnür

et al. 2006

Applied Physics Letters

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The fabrication and characterization of metallic nanometer-sized gaps suitable for conductivity measurements of single molecules were studied. Controlled gap formation by electromigration (EM) is demonstrated in contiguous and ultrathin Ag structures wetting the Si(100) substrate. The gaps obtained are in the range of nanometers or even subnanometers, as revealed by lateral conductivity measurements and scanning tunneling microscopy carried out under ultrahigh vacuum conditions. Annealing to 300K closes the gap by enabling surface diffusion of Ag, and another cycle of opening by EM at 80K can be performed. The functionality of the contacts is demonstrated by insertion of ferrocenedithiol molecules into the gap.

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mentioning

confidence: 92%

Switchable nanometer contacts: Ultrathin Ag nanostructures on Si(100)

Gardinowski

Schmeidel

Pfnür

et al. 2006

Applied Physics Letters

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“…Different from the previous time-and cost-consuming methods, [10][11][12][13][14] we have developed an easy and cost-effective way to fabricate a thickness controllable, large-area, highquality and single-crystalline Ag film, which could benefit the development of Ag-based plasmonics. Our method employs ex-situ e-gun evaporation followed by rapid thermal annealing (RTA) by using the conventional semiconductor process equipment.…”

Section: Introductionmentioning

confidence: 99%

“…Their growth procedure started with flashing the silicon wafer to $1200 C several times to desorb the native oxide and then deposited Ag at a rate of 0.5 nm/min. Hoegen et al 12 also prepared Ag (111) thin films on the Si (100) substrate in a UHV chamber by using a two-step method. The Ag film was deposited at low temperature (90 $ 130 K) and then annealed to room temperature.…”

Section: Introductionmentioning

confidence: 99%

“…4 However, to fabricate single-crystalline Ag films is a daunting challenge because the Ag atom arrangement could be sensitive to the template surface construction and cleanness. In past decades, there were a few works reporting preparation of single-crystalline metal films using ultrahigh vacuum (UHV) chamber with an extremely low growth rate [10][11][12][13] as the UHV chamber provides an ultra clean environment to prevent the surface from oxidation before the growth. Hanawa and Oura 11 grew singlecrystalline Ag (100) film on silicon (100) wafer at room temperature in an UHV chamber (1 $ 2 Â 10 À10 Torr).…”

Section: Introductionmentioning

confidence: 99%

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Single-crystalline silver film grown on Si (100) substrate by using electron-gun evaporation and thermal treatment

Chou

Lin

Huang

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The authors demonstrate a simple method to fabricate ultrasmooth single-crystalline silver (Ag) films with high reflectivity and low plasmonic damping. The single-crystalline Ag thin film on the clean Si (100) substrate is first deposited by electron-gun evaporator and then treated by rapid thermal annealing (RTA) to improve its quality. The crystal structure and surface morphology are characterized by x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Optical constants of the prepared films are extracted by fitting the measured reflectivity spectra with the Drude model. These results show that the Ag film with 340 °C RTA has the best film quality, including small surface roughness of 0.46 nm, a sharp x-ray diffraction peak with FWHM of 0.3°, and lowest damping in the visible and near-infrared wavelength regime. Therefore, our method is not only cost-effective but also useful for fabricating metal-based plasmonic and nanophotonic devices.

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“…Epitaxial Ag films of thicknesses down to 4 nm can by prepared on Si samples using a procedure developed independently by Horn-von Hoegen [25,26] and Horn and their coworkers [27]. Ag is deposited on a clean Si substrate held at liquid N 2 temperature.…”

Section: Methodsmentioning

confidence: 99%

Photochemistry on ultrathin metal films

Hasselbrink¹

2008

Surface Science

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Epitaxial layer growth of Ag(111)-films on Si(100)

Cited by 34 publications

References 13 publications

Switchable nanometer contacts: Ultrathin Ag nanostructures on Si(100)

Switchable nanometer contacts: Ultrathin Ag nanostructures on Si(100)

Single-crystalline silver film grown on Si (100) substrate by using electron-gun evaporation and thermal treatment

Photochemistry on ultrathin metal films

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