Epitaxial InGaAs Quantum Dots in Al0.29Ga0.71As Matrix: Intensity and Kinetics of Luminescence in the Near Field of Silver Nanoparticles

Kosarev, A.; Chaldyshev, V. V.; Kondikov, A. A.; Vartanyan, T. A.; Toropov, N. A.; Gladskikh, I. A.; Gladskikh, Polina V.; Акимов, И. А.; Bayer, М.; Преображенский, В. В.; Putyato, М. А.; Semyagin, B. R.

doi:10.1134/s0030400x19050151

Cited by 8 publications

(7 citation statements)

References 15 publications

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“…Such integration, however, is not feasible for typical plasmonic materialsgold and silverdue to poor compatibility of technologies for obtaining the corresponding nanoparticles and the technology of epitaxial growth of semiconductors. Plasmonic nanoparticles of these materials cannot be obtained in the volume of a semiconductor material, although they can be formed on the surface of grown semiconductor structures using an additional technological process [3,4].…”

Section: Introductionmentioning

confidence: 99%

Structure and optical properties of a composite AsSb-Al-=SUB=-0.6-=/SUB=-Ga-=SUB=-0.4-=/SUB=-As-=SUB=-0.97-=/SUB=-Sb-=SUB=-0.03-=/SUB=- metamaterial

et al. 2023

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Epitaxial layers of AlxGa1-xAs1-ySby with an aluminum content x~60% and antimony content y~3% were successfully grown by molecular-beam epitaxy at low temperature. A developed system of AsSb nanoinclusions was formed in the semiconductor matrix by subsequent annealing. The extended transparency window of the obtained metamaterial allows us to document the absorption of light near the interband absorption edge of the AlxGa1-xAs1-ySby semiconductor matrix. Parameters of the observed extinction band allow us to attribute the optical absorption to the plasmon resonance in the system of AsSb nanoinclusions. Keywords: molecular beam epitaxy, x-ray diffraction analysis, transmission electron microscopy, optical properties, plasmon resonance.

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Section: Introductionmentioning

confidence: 99%

Structure and optical properties of a composite AsSb-Al-=SUB=-0.6-=/SUB=-Ga-=SUB=-0.4-=/SUB=-As-=SUB=-0.97-=/SUB=-Sb-=SUB=-0.03-=/SUB=- metamaterial

et al. 2023

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“…Unfortunately, such integration is impossible for the common plasmonic materials—gold and silver, since the fabrication technology of the Au and Ag nanoparticles is not compatible with the epitaxial growth technology of III–V semiconductor compounds widely used for optoelectronics. In this case, the system of plasmonic nanoparticles can only be produced on the surface of the semiconductor nanostructure by post-growth deposition and treatments [ 3 , 4 ].…”

Section: Introductionmentioning

confidence: 99%

Metal-Semiconductor AsSb-Al0.6Ga0.4As0.97Sb0.03 Metamaterial

et al. 2022

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AlGaAsSb and AlGaAs films as thick as 1 μm with Al content as high as 60% were successfully grown by low-temperature (200 °C) MBE. To overcome the well-known problem of growth disruption due to a high aluminum content and a low growth temperature, we applied intermittent growth with the temperature elevation to smooth out the emerging roughness of the growth front. Post-growth annealing of the obtained material allowed us to form a developed system of As or AsSb nanoinclusions, which occupy 0.3–0.6% of the material volume. While the As nanoinclusions are optically inactive, the AsSb nanoinclusions provide a strong optical absorption near the band edge of the semiconductor matrix due to the Fröhlich plasmon resonance. Owing to the wider bandgap of the grown Al0.6Ga0.4As0.97Sb0.03 compound, we have expanded the spectral range available for studying the Fröhlich plasmon resonance. The grown metamaterial represents an optically active medium of which the formation process is completely compatible with the epitaxial growth technology of semiconductors.

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“…Unfortunately, such integration often proves to be impossible as the technology for forming nanoparticles of common plasmonic metals, silver or gold, is incompatible with the technology of epitaxial growth of III-V semiconductors, which are widely used in optoelectronics [ 12 ]. In this case, the system of plasmonic nanoparticles can be obtained after the growth of the semiconductor structure on its surface [ 13 , 14 ].…”

Section: Introductionmentioning

confidence: 99%

Unveiling Influence of Dielectric Losses on the Localized Surface Plasmon Resonance in (Al,Ga)As:Sb Metamaterials

Ushanov,

Eremeev,

Silkin

et al. 2024

Nanomaterials

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We perform numerical modeling of the optical absorption spectra of metamaterials composed of systems of semimetal antimony nanoparticles embedded into AlxGa1−xAs semiconductor matrices. We reveal a localized surface plasmon resonance (LSPR) in these metamaterials, which results in a strong optical extinction band below, near, or above the direct band gap of the semiconductor matrices, depending on the chemical composition of the solid solutions. We elucidate the role of dielectric losses in AlxGa1−xAs, which impact the LSPR and cause non-plasmonic optical absorption. It appears that even a dilute system of plasmonic Sb nanoinclusions can substantially change the optical absorption spectra of the medium.

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Epitaxial InGaAs Quantum Dots in Al0.29Ga0.71As Matrix: Intensity and Kinetics of Luminescence in the Near Field of Silver Nanoparticles

Cited by 8 publications

References 15 publications

Structure and optical properties of a composite AsSb-Al-=SUB=-0.6-=/SUB=-Ga-=SUB=-0.4-=/SUB=-As-=SUB=-0.97-=/SUB=-Sb-=SUB=-0.03-=/SUB=- metamaterial

Structure and optical properties of a composite AsSb-Al-=SUB=-0.6-=/SUB=-Ga-=SUB=-0.4-=/SUB=-As-=SUB=-0.97-=/SUB=-Sb-=SUB=-0.03-=/SUB=- metamaterial

Metal-Semiconductor AsSb-Al0.6Ga0.4As0.97Sb0.03 Metamaterial

Unveiling Influence of Dielectric Losses on the Localized Surface Plasmon Resonance in (Al,Ga)As:Sb Metamaterials

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