Epitaxial growth of ZnSe and ZnSe/CdSe nanowires on ZnSe

Bellet-Amalric, E.; Elouneg-Jamroz, Miryam; Bougerol, Catherine; Hertog, M. den; Genuist, Y.; Bounouar, S.; Poizat, Jean‐Philippe; Kheng, K.; André, R.; Tatarenko, S.

doi:10.1002/pssc.200983254

Cited by 12 publications

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“…2 Recently, the formation of WZ/ZB heterostructures has also been reported in MBE-grown II-VI nanowire systems. 8 For the group III-nitride material system reports of WZ/ZB heterostructures have not been published so far, with the only exception of the work by Renard et al 9 analyzing the properties of GaN nanowires with a WZ base and a ZB top segment. In GaN, the properties of the ZB phase 10 of its inclusions in a WZ matrix 11 and of stacking faults (SF) (Refs.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires

Jacopin

Rigutti

Largeau

et al. 2011

Journal of Applied Physics

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The optical and structural properties of wurtzite GaN nanowires containing zinc-blende GaN inclusions of different thicknesses are investigated. Micro-photoluminescence spectra of single nanowires exhibit a series of narrow emission peaks with linewidth as low as 0.8 meV in the interval 3.1-3.42 eV. The peak energy blue-shifts with increasing excitation power following a $I 1/3 law due to the progressive band filling and to the screening of the internal field. The quantum confinement in these type-II crystal phase heterostructures was simulated in the framework of a one-dimensional effective mass model, accounting for the internal electrical polarization of the wurtzite GaN. The predicted transition energies are in good agreement with the energy statistics realized on more than 30 single nanowire emission spectra.

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Section: Introductionmentioning

confidence: 99%

Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires

Jacopin

Rigutti

Largeau

et al. 2011

Journal of Applied Physics

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“…The density of the gold nanoparticles can be adjusted by the Au deposition time between 10 9 /cm 2 and 50 Â 10 10 /cm 2 . In the present work we have used a dewetting process at 500 1C in order to avoid the growth of NWs in different directions as was observed when nanotrenches were present [9].…”

Section: Introductionmentioning

confidence: 97%

“…The gold dewetting process on ZnSe has been studied previously in detail; nanotrenches with gold particles inside [8,9] are formed at 530 1C (Fig. 1A).…”

Section: Introductionmentioning

confidence: 99%

“…The CdSe insertions are grown during the NW epitaxial growth process by switching the Zn flux to a Cd flux for 30 s. The Cd:Se ratio is 1:3. A JEOL 3010 was used for high resolution transmission electron microscopy (HRTEM) in combination with energy filtered TEM (EFTEM) and a probe corrected FEI Titan was used for high angle annular dark field scanning TEM (HAADF STEM).The gold dewetting process on ZnSe has been studied previously in detail; nanotrenches with gold particles inside [8,9] are formed at 530 1C (Fig. 1A).…”

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confidence: 99%

“…HRTEM images were treated by the Geometrical Phase Analysis (GPA) method in order to get the interplanar spacing variations along the wire axis [9]. Since the (1 1 1) interplanar distance is larger in CdSe than in ZnSe the QD position is marked by a larger lattice spacing equal to the expected lattice spacing in CdSe 111 .…”

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Insertion of CdSe quantum dots in ZnSe nanowires: MBE growth and microstructure analysis

Hertog

Elouneg-Jamroz

Bellet-Amalric

et al. 2011

Journal of Crystal Growth

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a b s t r a c tZnSe nanowire growth has been successfully achieved on ZnSe (1 0 0) and (1 1 1)B buffer layers deposited on GaAs substrates. Cubic [1 0 0] oriented ZnSe nanowires or [0 0 0 1] oriented hexagonal NWs are obtained on (1 0 0) substrates while [1 1 1] oriented cubic mixed with [0 0 0 1] oriented hexagonal regions are obtained on (1 1 1)B substrates. Most of the NWs are perpendicular to the surface in the last case. CdSe quantum dots were successfully incorporated in the ZnSe NWs as demonstrated by transmission electron microscopy, energy filtered TEM and high angle annular dark field scanning TEM measurements. & 2010 Elsevier B.V. All rights reserved.ZnSe nanowires (NWs) with CdSe quantum dot (QD) insertions are promising objects for opto-electronic applications, for example due to the large exciton binding energy and strong carrier confinement. ZnSe NWs can be prepared by vapor phase growth [1], metalorganic chemical vapor deposition [2], molecular beam epitaxy (MBE) [3,4] or thermo-chemical processes [5]. With the ability to precisely control growth parameters and to accurately monitor the growth process, MBE is an ideal tool to grow nano-structured materials.We have recently shown that a single CdSe quantum dot (QD) embedded in a ZnSe NW is an efficient single photon source operating at temperatures as high as 220 K [6]. However, when grown on an oxidized Si (1 0 0) substrate in the VLS growth mode catalyzed by gold particles, the NWs present a random distribution of orientations. Ohno et al. [7] reported MBE growth of ZnSe NWs on ZnSe/GaAs templates using Fe as catalyst but no clear epitaxial relationship between the template and the NWs was observed.In this contribution we report on the epitaxial growth of ZnSe and ZnSe-CdSe-ZnSe QD embedded heterostructured NWs deposited on 2D ZnSe (1 0 0) or ZnSe (1 1 1)B buffer layer epitaxially grown on GaAs (1 0 0) or GaAs (1 1 1)B substrates, respectively.The NWs are grown by MBE using gold as a catalyst. Samples used in this study were all grown in a Riber 32P solid source MBE system. The source materials for the MBE system were elemental Zn, Se and Cd. GaAs (1 0 0) and (1 1 1)B commercial wafers were used as substrates. The GaAs substrates are deoxidized under As flow. Then a GaAs buffer layer is grown by MBE in a connected III-V MBE chamber. In order to avoid Ga incorporation in NWs and to improve the expitaxial relation between NW and substrate, a thin ZnSe buffer layer (about 30 nm thick) is grown at 280 1C on the GaAs epi-layer. Gold is then evaporated on the ZnSe buffer layer at room temperature in a dedicated metal deposition chamber connected to the II-VI and III-V growth chambers by UHV path. Dewetting of the gold film was done at 500-530 1C for several minutes. The ZnSe NWs are grown at different temperatures between 300 and 450 1C under excess of Se flux. The beam equivalent pressure ratio Zn:Se is 1:4 and the pressure is in the 10 À 7 Torr range. The CdSe insertions are grown during the NW epitaxial growth process by switching the Zn flux to a C...

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Semiconductor Nanowires

Rigutti

2015

Wiley Encyclopedia of Electrical and Electronics Engineering

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Semiconductor nanowires are cylindrical semiconducting crystal having a diameter d of the order of 100 nm or lower and a high (>∼10) length over diameter aspect ratio. They have been demonstrated in many different materials systems and constitute a various and dynamical research field in the framework of solid‐state physics, nanoscience, and nanotechnology. Their interest resides both in their peculiar fundamental properties and in the possibility of developing original nanoscale devices. This article will introduce and review the synthesis methods for bottom‐up semiconductor nanowires. Then, their specific properties will be addressed. A third section is specifically dedicated to discussing the technological approaches for the realization of nanowire devices and to different device applications.

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Epitaxial growth of ZnSe and ZnSe/CdSe nanowires on ZnSe

Cited by 12 publications

References 11 publications

Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires

Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires

Insertion of CdSe quantum dots in ZnSe nanowires: MBE growth and microstructure analysis

Semiconductor Nanowires

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