Epitaxial Growth of Zirconia and Yttria Stabilized Zirconia Films on Sapphire Substrates by Reactive Sputtering

Abstract

Epitaxial single crystal growth of zirconia (ZrO2) and yttria stabilized zirconia (ZrO2 ·Y2O3) films on sapphire substrates was achieved for the first time by using reactive sputtering. And the relations of crystallographic orientations between the epitaxial films and sapphire substrates was determined. Yttria stabilized zirconia films seem to offer hiah quality SOI substrates, since the crystal structure of ZrO2·Y2O3 is cubic fluorite and its lattice constant is closely matched to those of semiconductors such as Si and GaAs.

First-principles characterization of a heteroceramic interface:ZrO2(001)deposited on anα−Christensen1, Carter2 2000Phys. Rev. B663291View full textAdd to dashboardCite

“…This epitaxial system is also used as a substrate for ceramic high-T c superconductors, where the zirconia film acts as a chemical buffer layer. [16][17][18] On the ␣-Al 2 O 3 (11 02) substrate, m-ZrO 2 (001) 16,19 and YSZ͑001͒ 16,19,17 have been observed to grow. However, at high oxygen pressure 16 22 studied growth of dense ZrO 2 /Al 2 O 3 nanolaminate structures.…”