Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

Li, Taotao; Guo, Wei; Ma, Liang; Li, Weisheng; Yu, Zhihao; Han, Zhen; Gao, Si; Liu, Lei; Fan, Dongxu; Wang, Zixuan; Yang, Yang; Lin, Weiyi; Luo, Zhongzhong; Chen, Xiaoqing; Dai, Ningxuan; Tu, Xuecou; Pan, Danfeng; Yao, Yagang; Wang, Peng; Nie, Yuefeng; Wang, Jinlan; Shi, Yi; Wang, Xinran

doi:10.1038/s41565-021-00963-8

Cited by 477 publications

(441 citation statements)

References 48 publications

Supporting

Mentioning

385

Contrasting

Order By: Relevance

“…44 Wang et al used an a-Al 2 O 3 (0001) wafer with a miscut angle towards the A-axis to demonstrate wafer-scale single-crystal MoS 2 growth. 41 Contrary to a conventional a-Al 2 O 3 (0001) wafer with predominant h11-20i steps, the proposed miscut approach produced surface steps along with h10-10i, which differentiated nucleation energies for the antiparallel domains and resulted in unidirectional alignment (Fig. 5d and e).…”

Section: Synthesis Of Non-centrosymmetric Wsso 2d Layersmentioning

confidence: 88%

Wafer-scale single-orientation 2D layers by atomic edge-guided epitaxial growth

Wan

Chuu

et al. 2022

Chem. Soc. Rev.

View full text Add to dashboard Cite

show abstract

Section: Synthesis Of Non-centrosymmetric Wsso 2d Layersmentioning

confidence: 88%

Wafer-scale single-orientation 2D layers by atomic edge-guided epitaxial growth

Wan

Chuu

et al. 2022

Chem. Soc. Rev.

View full text Add to dashboard Cite

show abstract

“… Wafer-scale growth of 2D TMDC single crystals. The synthesis of large-area TMDC single crystals with unprecedented crystallinity, electrical quality, and wafer-scale uniformity is the ultimate target that will eventually pave the way for 2D TMDC-based electronics ( Li et al, 2021 ; Xu et al, 2021 ). Molten salts such as Na 2 Mo 2 O 7 had been used to achieve ledge-induced epitaxial growth of 1D MoS 2 nanoribbons along with the surface steps of NaCl crystals.…”

Section: Perspectivementioning

confidence: 99%

Salt-assisted chemical vapor deposition of two-dimensional transition metal dichalcogenides

Li¹

2021

iScience

View full text Add to dashboard Cite

Summary Salt-assisted chemical vapor deposition (SA-CVD), which uses halide salts (e.g., NaCl, KBr, etc.) and molten salts (e.g., Na 2 MoO 4 , Na 2 WO 4 , etc.) as precursors, is one of the most popular methods favored for the fabrication of two-dimensional (2D) materials such as atomically thin metal chalcogenides, graphene, and h-BN. In this review, the distinct functions of halogens (F, Cl, Br, I) and alkali metals (Li, Na, K) in SA-CVD are first clarified. Based on the current development in SA-CVD growth and its related reaction modes, the existing methods are categorized into the Salt 1.0 (halide salts-based) and Salt 2.0 (molten salts-based) techniques. The achievements, advantages, and limitations of each technique are discussed in detail. Finally, new perspectives are proposed for the application of SA-CVD in the synthesis of 2D transition metal dichalcogenides for advanced electronics.

show abstract

“…), have attracted considerable attention due to their unique physical and chemical properties, exhibiting promising applications on optoelectronics [1][2][3], valleyelectronics [4] and chemical sensors [5,6]. Both fundamental research and potential applications are highly dependent on the quality of TMD materials [7][8][9][10]. Conventionally, there are two kinds of methods to prepare 2D materials: top-down and bottom-up approaches.…”

Section: Introductionmentioning

confidence: 99%

“…On the other hands, bottom-up synthesis methods (such as intercalation assisted exfoliation [11], physical vapor deposition [12], hydrothermal synthesis [13], and chemical vapor deposition (CVD)) can offer a lateral size of TMD films up to hundreds of micrometers. In particular, CVD has been well-developed to produce large area crystals with controllable thickness and stacking sequences [9,10,14]. As a matter of fact, it is still a challenge to obtain highly uniform TMD materials with high performance on carrier mobility and conductivity with the CVD method.…”

Section: Introductionmentioning

confidence: 99%

Direct Detection of Inhomogeneity in CVD-Grown 2D TMD Materials via K-Means Clustering Raman Analysis

et al. 2022

View full text Add to dashboard Cite

It is known that complex growth environments often induce inhomogeneity in two-dimensional (2D) materials and significantly restrict their applications. In this paper, we proposed an efficient method to analyze the inhomogeneity of 2D materials by combination of Raman spectroscopy and unsupervised k-means clustering analysis. Taking advantage of k-means analysis, it can provide not only the characteristic Raman spectrum for each cluster but also the cluster spatial maps. It has been demonstrated that inhomogeneities and their spatial distributions are simultaneously revealed in all CVD-grown MoS2, WS2 and WSe2 samples. Uniform p-type doping and varied tensile strain were found in polycrystalline monolayer MoS2 from the grain boundary and edges to the grain center (single crystal). The bilayer MoS2 with AA and AB stacking are shown to have relatively uniform p-doping but a gradual increase of compressive strain from center to the periphery. Irregular distribution of 2LA(M)/E2g1 mode in WS2 and E2g1 mode in WSe2 is revealed due to defect and strain, respectively. All the inhomogeneity could be directly characterized in color-coded Raman imaging with correlated characteristic spectra. Moreover, the influence of strain and doping in the MoS2 can be well decoupled and be spatially verified by correlating with the clustered maps. Our k-means clustering Raman analysis can dramatically simplify the inhomogeneity analysis for large Raman data in 2D materials, paving the way towards direct evaluation for high quality 2D materials.

show abstract

Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

Cited by 477 publications

References 48 publications

Wafer-scale single-orientation 2D layers by atomic edge-guided epitaxial growth

Wafer-scale single-orientation 2D layers by atomic edge-guided epitaxial growth

Salt-assisted chemical vapor deposition of two-dimensional transition metal dichalcogenides

Direct Detection of Inhomogeneity in CVD-Grown 2D TMD Materials via K-Means Clustering Raman Analysis

Contact Info

Product

Resources

About