Epitaxial growth of titanium oxide thin films on c-cut and α-cut sapphire substrates

Sbai, Nadia; Perrière, J.; Seiler, Wilfrid; Millon, Éric

doi:10.1016/j.susc.2007.09.019

Cited by 41 publications

(28 citation statements)

References 23 publications

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“…Regarding XRD patterns, these differences could be explained by a better crystalline quality in R 200 rather than in R PC as the FWHM of (2 0 0) peak of R-TiO 2 is smaller than the other ones. In previous works [17,18], it has been demonstrated that R-or A-TiO 2 films grown on sapphire and LaAlO 3 substrates are strongly oriented according to the same out-of plane relationships evidenced in the present study and they are also epitaxied allowing for such films to be almost considered as like-single crystal. Despite its interesting structural properties, the A-TiO 2 films do not lead to intense PL emission due to the STE process.…”

Section: Effect Of Dopant Concentration On Integrated Photoluminescensupporting

confidence: 76%

UV to NIR photon conversion in Nd-doped rutile and anatase titanium dioxide films for silicon solar cell application

et al. 2012

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is an open access repository that collects the work of Arts et Métiers ParisTech researchers and makes it freely available over the web where possible. (0 0 4) anatase. An UV to NIR photon conversion is evidenced in the films. Indeed, intense and wellresolved emission lines from Nd 3+ have been observed upon excitation above the TiO 2 bandgap at room temperature. The sensitised emission of Nd 3+ is found to be much efficient in rutile than in anatase structure. Low temperature photoluminescence measurements lead to fine resolved peaks corresponding to the Nd 3+ 4f transitions with different spectral characteristic according to the host matrix used. Photoluminescence dependence temperature evidences that the light emission from Nd 3+ in anatase-based films is probably influenced by the presence of self-trapped excitons or by orbital interaction. Mechanisms of sensitisation host to Nd 3+ are proposed for both matrixes. Finally, the Nd dopant concentration and the microstructure of TiO 2 rutile films are found to affect the photoluminescence emission intensity. Rutile film (2 0 0) oriented is the most adapted host matrix to sensitise 1 at.% Nd 3+ ions for an emission around 1064 nm making such Nd-doped layers interesting for photon conversion by down shifting process.

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Section: Effect Of Dopant Concentration On Integrated Photoluminescensupporting

confidence: 76%

UV to NIR photon conversion in Nd-doped rutile and anatase titanium dioxide films for silicon solar cell application

et al. 2012

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“…The deposition rate is therefore in agreement with typical values reported for PLD oxide films [16][17]. SEM images of RMS films highlight a different morphology: a rough surface composed by angularshaped structures (few hundreds of nanometer) (Fig.…”

Section: Resultssupporting

confidence: 89%

Yttria-stabilized zirconia thin films deposited by pulsed-laser deposition and magnetron sputtering

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Reguzina

Millon

et al. 2011

Surface and Coatings Technology

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Yttria-stabilized zirconia (YSZ, ZrO 2 :Y 2 O 3 ) was deposited on (100) silicon by two physical vapor deposition techniques: pulsed laser deposition (PLD) and reactive magnetron sputtering (RMS). PLD thin films were grown on silicon substrates at 500°C from the ablation of a 8YSZ ceramic target by a KrF excimer laser. RMS thin films were obtained by direct current magnetron sputtering of a Zr/Y metallic target in an oxygen/argon atmosphere. The deposition rate of the PLD technique using an UV excimer laser delivering pulses at a repetition rate of 40 Hz was found two orders of magnitude lower than the RMS method one. Both techniques led to the growth of crystalline films with a (111) preferential orientation. PLD films were dense and featureless whereas RMS ones exhibited well defined but compact columnar structure. Growth of a YSZ film of about 1 µm covering a rough and porous commercial anode support (NiO-YSZ cermet) was successfully carried out with both methods.

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“…However, the nominally strong bulk diffraction lines A(101) and R(110) are absent, yet the dominant peaks R(200), R(400) and A(004) indicate that the films after annealing are preferentially oriented with respect to substrate. Such preferential orientation of the TiO 2 films on Al 2 O 3 substrate is well-known [15,16].…”

Section: Resultsmentioning

confidence: 95%

Hydrogen gas sensors based on nanocrystalline TiO2 thin films

et al. 2011

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Abstract:Titanium dioxide thin films are extensively studied for applications in solid state gas sensor devices. Their gas sensing properties are strongly dependent on deposition technique, annealing temperature, film thickness and consequent properties like crystalline structure, grain size or amount of defects and impurities. In this work we report the gas sensing properties of TiO 2 thin films prepared by reactive magnetron sputtering technique and subsequently annealed at temperatures 600°C and 900°C. The films were exposed to different concentrations of H 2 gas up to 10 000 ppm. Their sensitivity to gas at various operating temperatures, ranging from 250°C to 450°C, was obtained by measuring their resistance. 07.07.Df, 68.47.Gh, 73.25.+i, 82.47 PACS (2008):

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Epitaxial growth of titanium oxide thin films on c-cut and α-cut sapphire substrates

Cited by 41 publications

References 23 publications

UV to NIR photon conversion in Nd-doped rutile and anatase titanium dioxide films for silicon solar cell application

UV to NIR photon conversion in Nd-doped rutile and anatase titanium dioxide films for silicon solar cell application

Yttria-stabilized zirconia thin films deposited by pulsed-laser deposition and magnetron sputtering

Hydrogen gas sensors based on nanocrystalline TiO2 thin films

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