Epitaxial growth of Sn on Si(111): A direct atomic-structure determination of the (2 √3 ×2 √3 )R30° reconstructed surface

Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si(111)-(23×23)RWang1, C.2, Ji3 et al. 2008Phys. Rev. B24280View full textAdd to dashboardCite

“…3 In this case, besides the common metallic ͑ ͱ 3 ϫ ͱ 3͒ R30°phase induced by adsorption of 1/3 ML Sn in the fourfold atop ͑T 4 ͒ site, 4,5 a new semiconducting ͑2 ͱ 3 ϫ 2 ͱ 3͒ R30°phase ͑hereafter, it is denoted as 2 ͱ 3 for simplification͒ with the first layer Sn atoms in the T 4 site and the second layer atoms in the H 3 site and total Sn coverage of 1.2 ML was reported. [5][6][7] The epitaxial growth at higher coverage was shown very complicated because of a phase transition from ␣-Sn to ␤-Sn, 8,9 partially due to the large lattice mismatch ͑ϳ19.5%͒ for the ␣-Sn ͑a semiconducting phase with diamond structure, a = 6.489 Å͒, partially due to the symmetry difference for the ␤-Sn ͑a metallic phase with body centered tetragonal structure, a = 5.83 Å and c = 3.18 Å͒ with decreased lattice mismatch of 7.4%. The information on the phase transition was primarily obtained indirectly by electron diffraction 8,9 and coaxial impact collision ion scattering spectroscopy.…”

STM observation of Sn overlayers on Si(111)

“…They have three different orientations, reflecting the substrate symmetry. Detailed analysis of the atomic configurations will be reported elsewhere [19], but we note here that the structure consists of more than three atomic layers of Sn grown epitaxially on the Si(111) substrate, because the 2 √ 3 × 2 √ 3 phase, which has a two-layer structure [9] appears on the underlying Sn substrate after desorption of the chains. Figure 4 shows an STM image after annealing at 730 • C. A two-dimensional honeycomb structure is clearly visible in the center of the figure.…”

“…It is well known that Sn deposition in the coverage range from one-third up to one monolayer (ML) yields two coexisting surface superstructures, √ 3 × √ 3 and 2 √ 3 × 2 √ 3 [5,6]. Their atomic and electronic structures have been extensively investigated using scanning tunneling microscopy (STM) [7][8][9][10][11][12][13], surface X-ray diffraction [14] angle-resolved ultraviolet photoelectron spectroscopy (ARUPS), and k-resolved inverse photoelectron spectroscopy (KRIPES) [15,16]. In addition, because of its zero band gap [17], the formation of substratestabilized films of α-Sn, which is stable above the normal α-Sn to β-Sn transition temperature (13.2 • C), is desired for fabricating quantum well structures with unique electronic features [18].…”

STM study of the interaction of atomic hydrogen with the Sn/Si(111) surface

“…3-Sn structure is higher than that of √ 3 × √ 3-Sn: about 1.17 ML [14]. For the whole surface to transform over the whole surface, extra Sn atoms are required.…”

“…The former consists of one atomic layer (coverage: 1/3 monolayer (ML)), and the latter of two atomic layers (1.17 ML) [14]. After irradiation at room temperature, the substrate was annealed in order to enhance the reaction and to desorb hydrogen from the surface.…”