2010
DOI: 10.1134/s0020168510100018
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Epitaxial growth of silicon whiskers without tapering at the base

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Cited by 3 publications
(9 citation statements)
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“…Usually, the initial contact angle of the droplet resting on a substrate surface is smaller than that for a developed nanowire and hence the bottom part of nanowire tapers to transfer one geometry to the other. 7,11,15,16 Most droplets observed on tops of long nanowires have the contact angles of 90°or larger. 7,10−14 However, it is poorly known why and how this tapering goes and when it stops, partly due to the mentioned uncertainty in the steady state contact angle.…”
Section: ■ Introductionmentioning
confidence: 99%
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“…Usually, the initial contact angle of the droplet resting on a substrate surface is smaller than that for a developed nanowire and hence the bottom part of nanowire tapers to transfer one geometry to the other. 7,11,15,16 Most droplets observed on tops of long nanowires have the contact angles of 90°or larger. 7,10−14 However, it is poorly known why and how this tapering goes and when it stops, partly due to the mentioned uncertainty in the steady state contact angle.…”
Section: ■ Introductionmentioning
confidence: 99%
“…The existing models for the initial nanowire shapes are based either on fully isotropic geometries without crystal facets 15 or equilibrium thermodynamic considerations. 16 The VLS growth start is also important for understanding the incubation times that are required to nucleate anisotropic nanowires and critically influence the collective properties within the resulting nanowire ensembles (such as the length distributions). 17 Furthermore, the Glas condition for the triple phase line nucleation, 7 which is also the necessary condition for the WZ phase formation in III−V nanowires with planar growth interfaces, is identical to the Nebol'sin−Shchetinin condition for stable VLS growth of cylindrical nanowires.…”
Section: ■ Introductionmentioning
confidence: 99%
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