Epitaxial growth of Sb thin film and chemical reaction of Sb-induced surface reconstruction on Si(113)3×2

An, Ki‐Seok; Hwang, Choongyu; Kim, Y.K; Cho, E.S; Park, C.-Y; Kakizaki, Akito

doi:10.1016/s0039-6028(01)01441-8

Cited by 7 publications

(2 citation statements)

References 30 publications

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“…Two of the most commonly used semiconductor types are silicon and III−V compounds such as GaAs. Sb has been grown epitaxially on Si surfaces including Si(113), [ 18 ] Si(001), [ 19 ] and various preparations of Si(111). [ 9,13,14,20 ] However, the crystal structure of the Sb overlayer is mismatched with that of the Si substrate in the lattice parameter and/or, symmetry which can lead to island growth, formation of multiple crystallographic domains, etc.…”

Section: Introductionmentioning

confidence: 99%

Structure of Strained Low‐Dimensional Sb by In Situ Surface X‐Ray Diffraction

Mousley

Burrows

Nicklin

et al. 2022

Physica Status Solidi (b)

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Antimony ultrathin films in tensile strain are grown on InAs(111)B substrates and studied in situ using surface X‐ray diffraction. The detailed atomic structures of two highly crystalline Sb(0001) films are derived, with thicknesses of 19 and 4 bilayers. Features considered in structural modeling include interfacial intermixing, surface roughness, individual layer relaxations, and rotational twin domains (RTDs). The four‐bilayer film shows significant structural relaxation in every layer, while both films include RTDs. The results are discussed in relation to the topological properties of low‐dimensional Sb.

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Section: Introductionmentioning

confidence: 99%

Structure of Strained Low‐Dimensional Sb by In Situ Surface X‐Ray Diffraction

Mousley

Burrows

Nicklin

et al. 2022

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…There is, therefore, a pressing need to understand the processes required to prepare atomically clean, well ordered surface reconstructions that can act as templates for growth. Semi-metals, such as antimony, deposited on semiconductors have also received attention for important technological applications including controlling the barrier height in Schottky contacts [5].…”

Section: Introductionmentioning

confidence: 99%