2019
DOI: 10.1021/acs.cgd.9b00483
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Epitaxial Growth of Ruby Crystal Films on Sapphire Crystal Substrates and Solubility of Aluminum Oxide in Molybdenum Trioxide Flux

Abstract: Ruby (Al2O3:Cr) crystal films were, for the first time, epitaxially grown on sapphire (Al2O3) crystal substrates via the evaporation of molybdenum trioxide (MoO3) flux. The crystal films were grown by heating the flux placed on the sapphire crystal substrates at 1100 °C for 1200 min. The films thus obtained exhibited a red color and were approximately 200 μm in thickness. Based on the X-ray diffraction and electron backscatter diffraction analyses data, the crystallographic orientation of the crystal films was… Show more

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Cited by 6 publications
(27 citation statements)
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“…We focused on the MoO 3 flux because it is easy to handle. Thus far, we have conducted research to understand various conditions, i.e., solubility, 14,15 holding temperature, 15 and flux evaporation control, 16 for growing ruby crystals.…”
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confidence: 99%
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“…We focused on the MoO 3 flux because it is easy to handle. Thus far, we have conducted research to understand various conditions, i.e., solubility, 14,15 holding temperature, 15 and flux evaporation control, 16 for growing ruby crystals.…”
mentioning
confidence: 99%
“…Thus far, ruby crystal films have been epitaxially grown on sapphire crystal substrates with well-developed c(0001) and a(1120) faces via MoO 3 flux evaporation. 14 Through epitaxial growth of ruby crystal films on substrates, it is possible to determine the relative difference in growth rate for each crystal face. If the relative difference in growth rate for each crystal face during crystal growth from the selected flux is known, a crystal with the desired form can be designed.…”
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confidence: 99%
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