Abstract:Quantum devices based on holes confined in crystalline Ge nanostructures have emerged as a promising platform in the field of quantum technology. Epitaxial Ge hutwires (HWs) successfully used in pioneering quantum bit (qubit) experiments are the logical next choice for long‐distance coherent spin–spin coupling experiments. However, leakage currents are currently limiting the device performance of HWs on bulk Si substrates. This drawback can be mitigated by the HW growth on silicon‐on‐insulator (SOI) substrates… Show more
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