Epitaxial growth of Pb(Zr,Ti)O3 films on MgAl2O4 by pulsed laser deposition

Abstract

Stoichiometric MgAl2O4 spinel single crystals were used as the substrates for deposition of lead zirconate titanate (PZT) thin films because of their excellent lattice matching. Epitaxial growth of (001) PZT films with a perovskite structure was achieved by means of the pulsed laser deposition technique but there exists a stringent restriction on the substrate temperature and oxygen pressure. PZT films could also be grown epitaxially on spinel substrates with an odd cut surface indicating that other growth directions can be obtained if the substrates are prepared with suitable orientation.

Spin-current injection and detection in κ-(BEDT-TTF)2Cu[N(CN)2]Br

“…The similar phenomenon was reported in κ-Br on a SrTiO 3 substrate, 16 of which the thermal expansion coefficient is close to that of YIG (∼ 10 ppm/K at room temperature 19,20 ). Thus, the ground state of the κ-Br film on YIG is expected to be slightly on the insulator side of the Mott transition.…”

Preparation of MgIn2O4Epitaxial Oxide Electrode with Spinel Structure and Heteroepitaxial Growth of BaTiO3–NiFe2O4Multiferroic Composite Thin Film

“…Thus far, there are only a few reports on the epitaxial growth of a perovskite on a spinel. Ling et al 25) and Chow et al 26) prepared epitaxial PZT and KNbO 3 thin films, respectively, on MgAl 2 O 4 (001) substrates. However, since MgAl 2 O 4 is an insulator, it is impossible to measure the electric properties of the perovskite thin film deposited on it.…”