Epitaxial growth of nonpolar m-plane ZnO (10–10) on large-size LiGaO2 (100) substrates

Wurtzite-derived ternary I–III–O2 semiconductors

“…β -LiGaO 2 , which possesses a band gap of 5.6 eV, is the best-known wurtzite-derived ternary oxide semiconductor. High purity single crystals several inches long can be grown by the Czochralski method and they can be cleaved to form faces that are lattice-matched to ZnO and GaN [ 30 – 32 ]. It has been studied as a substrate material for ZnO and GaN and as an insulating layer for epitaxially grown ZnO-based multilayers [ 33 ].…”

Anisotropic photoluminescence of nonpolar ZnO epilayers and ZnO/Zn1-xMgxO multiple quantum wells grown on LiGaO2 substrate

“…LiGaO 2 (LGO) (100) and ( 010) substrates have been demonstrated to be suitable for growing nonpolar m-and a-plane ZnO epilayers, respectively [22][23][24]. The lattice mismatch is 1.9% in [1120] LGO, all of which will further decrease at the actual growth temperature of 700°C due to thermal expansion.…”

Epitaxial growth of nonpolar m-plane ZnO epilayers and ZnO/Zn0.55Mg0.45O multiple quantum wells on a LiGaO2 (100) substrate

“…19,20 LiGaO 2 (LGO) substrates with (100) or (010) surfaces have a high potential for growing nonpolar GaN [21][22][23][24][25][26][27] and ZnO. [28][29][30][31][32] Different growth techniques, including pulsed laser deposition (PLD), 21,22 molecular beam epitaxy (MBE), 23,24 and chemical vapor deposition (CVD), 25 have been employed to fabricate nonpolar GaN lms and quantum wells. 26 The full width at half maximum (FWHM) of the (10 10) rocking curve and the surface roughness can be as low as 0.1 and 0.9 nm, respectively.…”