Epitaxial growth of layers of hexagonal silver iodide

Cochrane, G.

doi:10.1016/0022-0248(70)90124-7

Cited by 12 publications

(2 citation statements)

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“…For thin-film measurements, layers of /3AgI were prepared by condensing silver on a mica substrate, held at room temperature in the presence of an iodine atmosphere. Electron diffraction studies [10] have shown that the films used were well oriented with the stacking directionnormal to the substrate. Electrical contact to the film was made through silver or colloidal graphite electrodes deposited on the mica surface prior to the commencement of evaporation.…”

Section: Methodsmentioning

confidence: 96%

“…3. Electron diffraction studies [ 1,10] have shown that the films used are well oriented with the stacking direction normal to the substrate, so that it is relevant to compare the results with those for single crystals measured in the a-direction. Because of the large surface-tovolume ratio of thin films, it is reasonable to expect extrinsic behaviour and, indeed, the slope of the plots is quiteclose to the value U_a=0"39eV expected from the single crystal results, if the majority carriers are silver ion vacancies rather than excess silver ions.…”

Section: Eia= 89mentioning

confidence: 99%

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Ionic conductivity and low frequency dispersion in hexagonal silver iodide

Cochrane

Fletcher

1971

Journal of Physics and Chemistry of Solids

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Measurements are reported for the temperature variation of ionic conductivity in single crystals of hexagonal silver iodide. Both nominally pure and Cu 2+ doped crystals were studied and analysis of the measurements for conduction both parallel and normal to the c-axis leads to a formation energy for Frenkel defects of 0-60 eV, activation energies for diffusion of Ag + interstitials parallel and normal to the c-axis of 0.61 and 0.29 eV respectively and corresponding activation energies for Ag + vacancies of 0-50 and 0.39 eV. Similar measurements performed on thin films of AgI grown expitaxially on mica show varying behaviour but the activation energy for conduction is about 0.4 eV, which agrees with the value expected from the single-crystal results if the conductivity is vacancy controlled. Dielectric measurements in the frequency range 10-10~Hz at temperatures between 193 and 340~ show anomalous dispersion peaks at about 104 Hz for temperatures above 300~ which are tentatively interpreted in terms of trapped Frenkel defects and interfacial polarization. At temperatures below about 290"K a series of sharp resonant absorptions is observed whose origin is uncertain. The static dielectric constant approaches the value 6.8 +-0.2 at temperatures below-40~ * Based on a thesis submitted by G. Cochrane for the Ph.D. degree of the University of New England.

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Section: Methodsmentioning

confidence: 96%

Section: Eia= 89mentioning

confidence: 99%