Epitaxial growth of InN on c-plane sapphire by pulsed laser deposition with r.f. nitrogen radical source

Ohta, Jitsuo; Fujioka, Hiroshi; Honke, T.; Oshima, Masaharu

doi:10.1016/j.tsf.2003.12.003

Cited by 13 publications

(9 citation statements)

References 21 publications

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“…Epitaxial growth of InN on c -plane sapphire has been explored [ 27 , 28 ]. However, to date, an intermediate layer of AlN (often formed by nitridation of the sapphire substrate) or a bilayer AlN\GaN have always been used to bridge the mismatch and reduce the defect formation.…”

Section: Discussionmentioning

confidence: 99%

Epitaxial Catalyst-Free Growth of InN Nanorods onc-Plane Sapphire

Shalish

Seryogin

et al. 2009

Nanoscale Res Lett

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We report observation of catalyst-free hydride vapor phase epitaxy growth of InN nanorods. Characterization of the nanorods with transmission electron microscopy, and X-ray diffraction show that the nanorods are stoichiometric 2H–InN single crystals growing in the [0001] orientation. The InN rods are uniform, showing very little variation in both diameter and length. Surprisingly, the rods show clear epitaxial relations with thec-plane sapphire substrate, despite about 29% of lattice mismatch. Comparing catalyst-free with Ni-catalyzed growth, the only difference observed is in the density of nucleation sites, suggesting that Ni does not work like the typical vapor–liquid–solid catalyst, but rather functions as a nucleation promoter by catalyzing the decomposition of ammonia. No conclusive photoluminescence was observed from single nanorods, while integrating over a large area showed weak wide emissions centered at 0.78 and at 1.9 eV.

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Section: Discussionmentioning

confidence: 99%

Epitaxial Catalyst-Free Growth of InN Nanorods onc-Plane Sapphire

Shalish

Seryogin

et al. 2009

Nanoscale Res Lett

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“…Various methods have been used for deposition of epitaxial InN including RF-sputtering, metal-organic chemical vapor deposition (MOCVD), RF-metal-organic molecular beam epitaxy (RF-MOMBE) and pulse laser deposition (PLD) [6][7][8][9][10][11][12][13][14]. In this paper, we report on the microstructural and electrical properties of InN thin films grown on n-ZnO substrates under different V/III ratio.…”

Section: Introductionmentioning

confidence: 99%

Metal-organic molecular beam epitaxy growth of InN films on highly orientated TCO/Si(100) substrates

Kuo

Chen

Hsiao

et al. 2008

Journal of Crystal Growth

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“…N 2 gas (99.9999% purity) was introduced into the growth chamber through an RF-plasma radical source operated at 380 W, while the pressure of the chamber was kept at 2.0 Â 10 À5 Torr during the InN growth. Details of growth conditions are reported elsewhere [25,26]. The growth rate of InN films was about 0.2 mm/ h. The structural properties of InN films were investigated using reflection high-energy diffraction (RHEED), high-resolution X-ray diffraction (HRXRD), electron backscattered diffraction (EBSD), SEM, and grazing incidence X-ray reflectivity (GIXR).…”

Section: Methodsmentioning

confidence: 99%