Epitaxial growth of <i>β</i>-Ga2O3 by hot-wall MOCVD

Gogova, D.; Ghezellou, Misagh; Dat, Tran Do; Richter, Steffen; Papamichail, Alexis; Ul-Hassan, Jawad; Persson, Axel R.; Persson, Per; Kordina, Olof; Ḿonemar, B.; Hilfiker, Matthew; Schubert, M.; Paskov, Plamen; Darakchieva, Vanya

doi:10.1063/5.0087571

Cited by 19 publications

(7 citation statements)

References 54 publications

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“…The results indicated that the slightly distorted unit cell of β-Ga 2 O 3 could be epitaxially grown on the GaN/A 2 O 3 substrate, which might require a relaxation technology of the β-Ga 2 O 3 unit cell to improve device performance. To alleviate the shape-related issues of the β-Ga 2 O 3 growth surface, the off-angled GaN substrate could be used …”

Section: Resultsmentioning

confidence: 99%

“…To alleviate the shape-related issues of the β-Ga 2 O 3 growth surface, the off-angled GaN substrate could be used. 21 The Fermi level and valence band edge of the grown β-Ga 2 O 3 on the GaN/Al 2 O 3 substrate were extracted from the linear extrapolation using UPS, as shown in Figure 5a. The extracted Fermi level and valence band edge were 3.8 and 8.3 eV, respectively.…”

Section: ■ Introductionmentioning

confidence: 99%

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Heteroepitaxial Growth of Single-Crystalline β-Ga₂O₃ on GaN/Al₂O₃ Using MOCVD

Seo

Kim

et al. 2023

Crystal Growth & Design

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The formation of n-Ga2O3/p-GaN heterojunctions has been studied intensively due to the lack of p-Ga2O3. Metalorganic chemical vapor deposition (MOCVD) is known to provide a high-quality heterojunction of n-Ga2O3/p-GaN compared to thermal oxidation, sputtering, or pulsed-laser deposition (PLD). In this work, single-crystalline β-Ga2O3 of {−201} is grown on a GaN (001)/Al2O3 substrate using MOCVD. An abrupt heterojunction without a noticeable interfacial layer is observed between β-Ga2O3 and GaN. However, due to the lattice mismatch between β-Ga2O3 (−201) and GaN (001), grain boundaries and grain defects originating from the Ga2O3/GaN interface continue in β-Ga2O3 in a diagonal direction. The epitaxial nature of the grown β-Ga2O3 on the GaN (001)/Al2O3 substrate causes the nanorod-shaped morphology in the growth direction of β-Ga2O3. This work marks a step toward the formation of a high-quality heterojunction of Ga2O3/GaN, which would serve as an essential building block for various devices, including optoelectronics and power electronics.

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Section: Resultsmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

Heteroepitaxial Growth of Single-Crystalline β-Ga₂O₃ on GaN/Al₂O₃ Using MOCVD

Seo

Kim

et al. 2023

Crystal Growth & Design

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“…Gallium oxide has several polymorphs [9][10][11][12] namely α, β, γ, δ, and κ(ε). Metastable κ(ε)-Ga 2 O 3 polymorph is of particular interest for the development of electronic devices due to its fundamental properties [13] such as the thermal stability up to 700 • C; the high bandgap E g of 4.5-5.0 eV; availability of the ferroelectric properties; the high symmetry of a crystal lattice.…”

Section: Introductionmentioning

confidence: 99%

High Sensitivity Low-Temperature Hydrogen Sensors Based on SnO2/κ(ε)-Ga2O3:Sn Heterostructure

et al. 2023

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The structural and gas-sensitive properties of n-N SnO2/κ(ε)-Ga2O3:Sn heterostructures were investigated in detail for the first time. The κ(ε)-Ga2O3:Sn and SnO2 films were grown by the halide vapor phase epitaxy and the high-frequency magnetron sputtering, respectively. The gas sensor response and speed of operation of the structures under H2 exposure exceeded the corresponding values of single κ(ε)-Ga2O3:Sn and SnO2 films within the temperature range of 25–175 °C. Meanwhile, the investigated heterostructures demonstrated a low response to CO, NH3, and CH4 gases and a high response to NO2, even at low concentrations of 100 ppm. The current responses of the SnO2/κ(ε)-Ga2O3:Sn structure to 104 ppm of H2 and 100 ppm of NO2 were 30–47 arb. un. and 3.7 arb. un., correspondingly, at a temperature of 125 °C. The increase in the sensitivity of heterostructures at low temperatures is explained by a rise of the electron concentration and a change of a microrelief of the SnO2 film surface when depositing on κ(ε)-Ga2O3:Sn. The SnO2/κ(ε)-Ga2O3:Sn heterostructures, having high gas sensitivity over a wide operating temperature range, can find application in various fields.

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“…High-quality β-Ga 2 O 3 thin films are heteroepitaxially grown on different substrates Si, GaAs, MgO, and α-Al 2 O 3 via various successful growth methods such as molecular beam epitaxy, − low-pressure chemical vapor deposition, metal-organic vapor phase epitaxy, − halide vapor phase epitaxy, , pulsed-laser deposition, − hot wall metal-organic CVD, and RF magnetron sputtering . The low-cost sapphire substrate has a very large band gap (8.1 eV).…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxial Growth of an Ultrathin β-Ga₂O₃ Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling

et al. 2022

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β-Gallium oxide (Ga2O3) has received intensive attention in the scientific community as a significant high-power switching semiconductor material because of its remarkable intrinsic physical characteristics and growth stability. This work reports the heteroepitaxial growth of the β-Ga2O3 ultrathin film on a sapphire substrate via mist chemical vapor deposition (CVD). This study used a simple solution-processed and nonvacuum mist CVD method to grow a heteroepitaxial β-Ga2O3 thin film at 700 °C using a Ga precursor and carrier gases such as argon and oxygen. Various characterization techniques were used to determine the properties of the thin film. Additionally, a computational study was performed to study the temperature distribution and different mist velocity profiles of the finite element mist CVD model. This simulation study is essential for investigating low to high mist velocities over the substrate and applying low velocity to carry out experimental work. XRD and AFM results show that the β-Ga2O3 thin film is grown on a sapphire substrate of polycrystalline nature with a smooth surface. HR-TEM measurement and UV–visible transmission spectrometry demonstrated heteroepitaxial β-Ga2O3 in an ultrathin film with a band gap of 4.8 eV.

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Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

Cited by 19 publications

References 54 publications

Heteroepitaxial Growth of Single-Crystalline β-Ga₂O₃ on GaN/Al₂O₃ Using MOCVD

Heteroepitaxial Growth of Single-Crystalline β-Ga₂O₃ on GaN/Al₂O₃ Using MOCVD

High Sensitivity Low-Temperature Hydrogen Sensors Based on SnO2/κ(ε)-Ga2O3:Sn Heterostructure

Heteroepitaxial Growth of an Ultrathin β-Ga₂O₃ Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling

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Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

Cited by 19 publications

References 54 publications

Heteroepitaxial Growth of Single-Crystalline β-Ga2O3 on GaN/Al2O3 Using MOCVD

Heteroepitaxial Growth of Single-Crystalline β-Ga2O3 on GaN/Al2O3 Using MOCVD

High Sensitivity Low-Temperature Hydrogen Sensors Based on SnO2/κ(ε)-Ga2O3:Sn Heterostructure

Heteroepitaxial Growth of an Ultrathin β-Ga2O3 Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling

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Heteroepitaxial Growth of Single-Crystalline β-Ga₂O₃ on GaN/Al₂O₃ Using MOCVD

Heteroepitaxial Growth of Single-Crystalline β-Ga₂O₃ on GaN/Al₂O₃ Using MOCVD

Heteroepitaxial Growth of an Ultrathin β-Ga₂O₃ Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling