Epitaxial Growth of Fe Films on n-Type GaAs by Electrodeposition

Liu, Y.-K.; Scheck, C.; Schad, R.; Zangari, Giovanni

doi:10.1149/1.1775971

Cited by 14 publications

(23 citation statements)

References 16 publications

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“…It is for thinner films that one might expect a reduction of M s . 8 The Ni films show bulklike saturation magnetization values in the hysteresis loops; thus, the lower value of 4M s + 2K p /M s must be due to the presence of some perpendicular anisotropy, expected if due to a crystallographic term.…”

Section: D44mentioning

confidence: 92%

Structural and Magnetic Properties of Epitaxial Fe and Ni Thin Films Grown on n-AlGaAs(001) Using Electrodeposition

Vutukuri¹,

Schad²,

Alexander³

et al. 2008

Electrochem. Solid-State Lett.

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We report epitaxial growth of body-centered cubic Fe and face-centered cubic Ni thin films on n-type AlGaAs͑001͒ substrates using electrochemical deposition with the cubic axes of Fe oriented parallel to the substrate lattice while the Ni is rotated in-plane 45°. The magnetic properties in either case are dominated by the fourfold crystalline anisotropy, a high remanence, and saturation magnetization values similar to bulk properties. The growth of such ferromagnetic contacts on AlGaAs might find applications in magneto-electronics.The discovery of spin-dependent transport 1-3 has recently stimulated wide interest in designs for memory and logic devices. In particular, the proposal of a spin-polarized field effect transistor 4 has triggered great attention on the issue of integration of ferromagnetic materials with semiconductors. Devices of this kind would require the growth of epitaxial ferromagnetic films with well-defined crystallographic, magnetic, and interface properties. Electrochemical deposition ͑ECD͒ in this regard offers important advantages as it is a low-energy, room-temperature deposition process which can limit the interdiffusion between the film and the substrate, thus enabling the growth of high-quality epitaxial layers. 5,6 In this article, we report on the electrochemical epitaxial growth of Fe and Ni films from sulfate electrolytes onto n-AlGaAs and on the structural and magnetic properties of the grown films. ExperimentalThe substrates were single-crystalline, n-doped GaAs͑001͒ on which a 200 nm thick Al 0.08 Ga 0.92 As:Si layer was grown by molecular beam epitaxy with 1 ϫ 10 18 cm −3 n-doping. The electrical contact to the substrate used for ECD was made using a Ga-In eutectic on the back side of the substrates. Prior to deposition, the substrates were cleaned in a 10% ammonia solution for 2 min and subsequently rinsed in deionized water prior to deposition. The surface area exposed for deposition typically was about 20 mm 2 .Electrodeposition was carried out under galvanostatic control ͑current density of 2.5 mA/cm 2 for Fe and 3.5 mA/cm 2 for Ni, using 0.1 M sulfate solutions with pH 2.5 in both cases͒ at 25°C in a prismatic cell with vertical parallel electrodes and a calomel reference electrode using a potentiostat EG&G, model 273A. In order to reduce the effect of any resistance variation of the back contact to the substrate, galvanostatic deposition was preferred over potentiostatic control. Graphite was used as the counter electrode. After deposition, the samples were rinsed with deionized water and blow dried. Film thicknesses are 50 nm for Ni and about 90 nm for Fe. These values were estimated from X-ray reflectivity for Ni and from saturation magnetic moments for Fe. Fe films were too rough to allow thickness measurements based on X-ray reflectivity. Hysteresis loops and angular remanence curves were measured using a Digital Measurement Systems vibrating sample magnetometer ͑VSM, DMS model 990͒. In-plane angular ferromagnetic resonance ͑FMR͒ was measured at 25.6 GHz with the dc fi...

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Section: D44mentioning

confidence: 92%

Structural and Magnetic Properties of Epitaxial Fe and Ni Thin Films Grown on n-AlGaAs(001) Using Electrodeposition

Vutukuri¹,

Schad²,

Alexander³

et al. 2008

Electrochem. Solid-State Lett.

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“…In the case of a single Fe(II)-electrolyte, Fe 3+ can be present due to oxidation of Fe 2+ at the anode or by the oxygen from the surrounding atmosphere [16]. The Fe 3+ concentration can be minimized by a separation of anolyte and catholyte, by working in a N 2 or Ar atmosphere and by using prereducing procedures.…”

Section: Resultsmentioning

confidence: 99%

Interfacial Fe(III)-hydroxide formation during Fe–Pt alloy deposition

Leistner

Schaaf

Voß

et al. 2008

Electrochimica Acta

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“…The electrodeposition of the ferromagnetic nanoclusters was carried out on lightly-doped 1k Ω.cm n-type (100) silicon substrate in a delimited area of about 0.5 cm 2 . Preparation of the bath solution for the electrodeposition, (containing 0.5M Fe 2 SO 4 and 0.5M NaSO 4 ), followed the protocol described in the literature [24] whereas the pH = 2.5 of the bath so- cubic-shaped nanoclusters with good homogeneity in size, more likely achieved due to the initial nucleation process performed at low potential (-1.2 V). Due to the low iron-content in the as-deposited samples improved signal detection and/or peak-to-noise ratio associated to the iron reflections was achieved using low incident angle XRD.…”

Section: Methodsmentioning

confidence: 99%

“…The electrodeposition of the ferromagnetic nanoclusters was carried out on lightly-doped 1k Ω.cm n-type (100) silicon substrate in a delimited area of about 0.5 cm 2 . Preparation of the bath solution for the electrodeposition, (containing 0.5M Fe 2 SO 4 and 0.5M NaSO 4 ), followed the protocol described in the literature [24] whereas the pH = 2.5 of the bath solution was controlled by sulfuric acid addition. A set of samples, with different deposition time, were produced in the potentiostatic mode using a short nucleation time process (30 sec) under low potential (of -1.2 V vs calomel reference electrode), following by 15 to 60 sec of deposition under -1.8 V. The electrodeposition time and the corresponding deposit resistance were monitored in order to find out the electrical percolation condition.…”

Section: Methodsmentioning

confidence: 99%

Low-field microwave absorption and magnetoresistance in iron nanostructures grown by electrodeposition on n-type lightly doped silicon substrates

Felix

Figueiredo

Mendes

et al. 2015

Journal of Magnetism and Magnetic Materials

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A. ObjectiveIn this study we investigate magnetic properties, surface morphology and crystal structure in iron nanoclusters electrodeposited on lightly-doped (100) n-type silicon substrates. Our goal is to investigate the spin injection and detection in the Fe/Si lateral structures. B. MethodsThe samples obtained under electric percolation were characterized by magnetoresistive and magnetic resonance measurements with cycling the sweeping applied field in order to understand the spin dynamics in the as-produced samples. C. ResultsThe observed hysteresis in the magnetic resonance spectra, plus the presence of a broad peak in the non-saturated regime confirming the low field microwave absorption (LFMA), were correlated to the peaks and slopes found in the magnetoresistance curves. D. ConclusionThe results suggest long range spin injection and detection in low resistive silicon and the magnetic resonance technique is herein introduced as a promising tool for analysis of electric contactless magnetoresistive samples. * dearaujo@ufv.br 2

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Epitaxial Growth of Fe Films on n-Type GaAs by Electrodeposition

Cited by 14 publications

References 16 publications

Structural and Magnetic Properties of Epitaxial Fe and Ni Thin Films Grown on n-AlGaAs(001) Using Electrodeposition

Structural and Magnetic Properties of Epitaxial Fe and Ni Thin Films Grown on n-AlGaAs(001) Using Electrodeposition

Interfacial Fe(III)-hydroxide formation during Fe–Pt alloy deposition

Low-field microwave absorption and magnetoresistance in iron nanostructures grown by electrodeposition on n-type lightly doped silicon substrates

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