2001
DOI: 10.1016/s0040-6090(01)00839-2
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Epitaxial growth of cerium oxide thin film buffer layers deposited by d.c. magnetron sputtering

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Cited by 34 publications
(19 citation statements)
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“…2 demonstrates that the as-grown un-irradiated film consisted of a singledomain. The fourfold symmetry observed from the (2 2 0) in-plane reflection is that expected of single crystal CeO 2 on r-plane sapphire, as observed by others [8,9]. Here it is important to draw a distinction between a highly textured polycrystalline film and a true single crystal film.…”
Section: Methodsmentioning
confidence: 58%
See 1 more Smart Citation
“…2 demonstrates that the as-grown un-irradiated film consisted of a singledomain. The fourfold symmetry observed from the (2 2 0) in-plane reflection is that expected of single crystal CeO 2 on r-plane sapphire, as observed by others [8,9]. Here it is important to draw a distinction between a highly textured polycrystalline film and a true single crystal film.…”
Section: Methodsmentioning
confidence: 58%
“…The best-fit of Eq. (9) to the attemperature irradiated diffusivity is shown in Fig. 7 and discussed below.…”
Section: Discussionmentioning
confidence: 97%
“…Technologically, epitaxial (001)-oriented CeO 2 films are important as an effective buffer layer for the subsequent integration of the functional (001)-oriented single-crystal oxides SrRuO 3 , SrTiO 3 , and YBa 2 Cu 3 O 7 onto commercially available large-area epi-ready (001) Si and (102) Al 2 O 3 substrates. [1][2][3][4][5] The unusually large mismatch that would tend to preclude epitaxy of (001) CeO 2 on (102) Al 2 O 3 is due to both the deviation of the (102) Al 2 O 3 surface from true cubic symmetry and the $9% difference in the spacing of atoms between the film and substrate directions that would be parallel if the (102) Al 2 O 3 substrate were to be truly cubic: The ''pseudo-cubic'' (102) Al 2 O 3 surface consists of a net formed by cations separated by $3.498 Å along the two close-packed directions, "…”
Section: Introductionmentioning
confidence: 99%
“…), microstructural defects, grain sizes and deposition process. By the past, to deposit ceria thin films on substrates, various deposition techniques were extensively used: the RF reactive sputtering [17,18], the chemical vapor deposition [19], the pulsed laser deposition [20,21] and the ''sol-gel'' method for the spin coating deposition [22,23]. Thermochromic VO 2 thin films were deposited on various substrates making use similar approaches: the RF reactive sputtering [24,25], the pulsed laser deposition [26,27], the chemical vapor deposition [28][29][30] and the sol-gel process [31,32].…”
Section: Introductionmentioning
confidence: 99%