Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition

Gaire, C.; Rao, Sameer R.; Riley, Mike; Chen, L.; Goyal, A.; Lee, S.; Bhat, Ishwara B.; Lu, Toh‐Ming; Wang, G.-C.

doi:10.1016/j.tsf.2011.09.019

Cited by 20 publications

(5 citation statements)

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“…It has both the lowest superlattice area as well as the lowest superlattice area mismatch. Similar geometrical matching has been observed in other heteroepitaxial systems such as CdTe(111) on Ni(100) 35,36 .…”

Section: B Films Grown On Caf 2 (100)supporting

confidence: 84%

“…Similar geometrical matching has been observed in other heteroepitaxial systems such as CdTe(111) on Ni(100). 35,36 Of note, this superlattice area matching model was also used to predict the epitaxies of Ge 1−x Sn x (111) on CaF 2 (111) and Ge 1−x Sn x (100) on CaF 2 (100). These calculations returned…”

Section: Xrd Pole Figure Analysis and In-plane Texture Evolution Of G...mentioning

confidence: 99%

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Orientation epitaxy of Ge_1−xSn_xfilms grown on single crystal CaF₂substrates

Littlejohn

Zhang

et al. 2016

CrystEngComm

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Ge 1−x Sn x films were grown via physical vapor deposition below the crystallization temperature of Ge on single crystal ( 111) and ( 100) CaF 2 substrates to assess the role of Sn alloying in Ge crystallization. By studying samples grown at several growth temperatures ranging from 250 °C to 400 °C we report temperaturedependent trends in several of the films' properties. X-ray diffraction theta vs. two-theta (θ/2θ) scans indicate single orientation Ge 1−x Sn x (111) films are grown on CaF 2 (111) substrates at each temperature, while a temperature-dependent superposition of ( 111) and ( 100) orientations are exhibited in films grown on CaF 2 (100) above 250 °C. This is the first report of (111) oriented Ge 1−x Sn x grown on a (100) oriented CaF 2 substrate, which is successfully predicted by a superlattice area matching model. These results are confirmed by X-ray diffraction pole figure analysis. θ/2θ results indicate substitutional Sn alloying in each film of about 5%, corroborated by energy dispersive spectroscopy. Additionally, morphological and electrical properties are measured by scanning electron microscopy, atomic force microscopy and Hall mobility measurements and are also shown to be dependent upon growth temperature.

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Section: B Films Grown On Caf 2 (100)supporting

confidence: 84%

Section: Xrd Pole Figure Analysis and In-plane Texture Evolution Of G...mentioning

confidence: 99%

Orientation epitaxy of Ge_1−xSn_xfilms grown on single crystal CaF₂substrates

Littlejohn

Zhang

et al. 2016

CrystEngComm

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“…Various techniques have been employed to deposit CdTe films, such as, closed space sublimation [4], electron beam evaporation [5], RF magneto sputtering [6], hot wall epitaxy [7], pulsed laser deposition [8], pulsed laser evaporation [9], molecular beam epitaxy [10], chemical vapor deposition [11], electrodeposition [12] and thermal evaporation [13]. Out of these methods, thermal evaporation stands out due to its low level of impurity presence in the growing layer, low trend of oxide formation, straight-line propagation of vapors from source to substrate, high deposition rate, low material consumption as well as low cost of operation.…”

Section: Introductionmentioning

confidence: 99%

Effect of post deposition heat treatment on microstructure parameters, optical constants and composition of thermally evaporated CdTe thin films

Kumarasinghe

Dissanayake

Pemasiri

et al. 2017

Materials Science in Semiconductor Processing

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Thin film microstructure and its properties can be effectively altered with post deposition heat treatments. In this respect, CdTe thin films were deposited on glass substrates at a substrate temperature of 200 °C using thermal evaporation technique, followed by air annealing at different temperatures from 200 to 500 °C. Structural analysis reveals that CdTe thin films have a cubic zincblend structure with two oxide phases related to CdTe 2 O 5 and CdTeO 3 at annealing temperature of 400 and 500 °C respectively. Regardless of the annealing temperature, the plane (111) was found to be the preferred orientation for all films. The crystallite size was observed to increase with annealing temperature. All films were found to display higher lattice parameters than the standard, and hence found to carry a compressive stress. Optical measurements suggest high uniformity of films both before and after post deposition heat treatment. Films annealed at 400 °C displayed superior optical properties due to its high refractive index, optical conductivity, relative density and low disorder. Furthermore, according to the compositional measurements, CdTe thin films were found to exhibit Te rich and Cd rich nature at regions near the substrate and center of the film respectively, for all annealing temperatures. However, composition of the regions near the substrate was found to become more Te rich with increasing annealing temperature. The study suggests that changing the annealing temperature as a post deposition treatment affects structural and optical properties of CdTe thin film as well as its composition. According to the observations, films annealed at 400 °C can be concluded to be the best films for photovoltaic applications due to its superior optical and structural properties.

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“…Wang et al. [ 96 ] reported a single crystal‐like CdTe thin film grown by metalorganic CVD on cube‐textured Ni (100) substrates. Schulz et al.…”

Section: Preparationmentioning

confidence: 99%

Two‐Dimensional Metal Telluride Atomic Crystals: Preparation, Physical Properties, and Applications

Tao

et al. 2021

Adv Funct Materials

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Atom‐thick 2D metal telluride atomic crystals (2D MTACs) display many fascinating physical properties for potential applications in multiple fields. In this review, recent advances in the preparation, physical properties and applications of 2D MTACs are presented. First, three kinds of the most available preparation methods for 2D single crystal MTACs have been summarized, including single crystal‐based mechanical exfoliation, molecular beam epitaxy, and chemical vapor deposition. Second, the recent progress on abundant physical properties of 2D MTACs is briefly introduced, including surface electronic properties, optoelectronic properties, electronic transport, and thermoelectric properties, ferroelectric properties, superconducting properties, and ferromagnetic properties. Third, the potential electronics, spintronics, optoelectronics and energy applications of 2D MTACs are presented. Finally, some significant challenges and opportunities in 2D MTACs are briefly addressed.

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Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition

Cited by 20 publications

References 20 publications

Orientation epitaxy of Ge_1−xSn_xfilms grown on single crystal CaF₂substrates

Orientation epitaxy of Ge_1−xSn_xfilms grown on single crystal CaF₂substrates

Effect of post deposition heat treatment on microstructure parameters, optical constants and composition of thermally evaporated CdTe thin films

Two‐Dimensional Metal Telluride Atomic Crystals: Preparation, Physical Properties, and Applications

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Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition

Cited by 20 publications

References 20 publications

Orientation epitaxy of Ge1−xSnxfilms grown on single crystal CaF2substrates

Orientation epitaxy of Ge1−xSnxfilms grown on single crystal CaF2substrates

Effect of post deposition heat treatment on microstructure parameters, optical constants and composition of thermally evaporated CdTe thin films

Two‐Dimensional Metal Telluride Atomic Crystals: Preparation, Physical Properties, and Applications

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Product

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Orientation epitaxy of Ge_1−xSn_xfilms grown on single crystal CaF₂substrates

Orientation epitaxy of Ge_1−xSn_xfilms grown on single crystal CaF₂substrates