1996
DOI: 10.1002/cvde.19960020604
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Epitaxial growth of Bi2O2.33 by halide Cvd

Abstract: Bismuth oxide is an interesting dielectric material with potential applications for optical coatings. MIS capacitors, and microwave integrated circuits. CVD growth has a number of advantages over other deposition techniques, e.g., precise control of oxygen activity, microstructure, and texture. The study presented here shows how this can be achieved for epitaxial Bi2O2.33 films grown on SrTiO3 and MgO (see Figure) using halide CVD with Bil3 as the bismuth source.

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Cited by 57 publications
(37 citation statements)
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“…[1] These properties make Bi 2 O 3 films well suited for many applications such as microelectronics, [2] sensor technology, [3] optical coatings, [4] and ceramic glass manufacturing. [5] Various precursors have been employed to synthesize Bi 2 O 3 films by CVD, including bismuth halides and bismuth triphenyl Bi(Ph) 3 .…”
mentioning
confidence: 98%
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“…[1] These properties make Bi 2 O 3 films well suited for many applications such as microelectronics, [2] sensor technology, [3] optical coatings, [4] and ceramic glass manufacturing. [5] Various precursors have been employed to synthesize Bi 2 O 3 films by CVD, including bismuth halides and bismuth triphenyl Bi(Ph) 3 .…”
mentioning
confidence: 98%
“…[5] Various precursors have been employed to synthesize Bi 2 O 3 films by CVD, including bismuth halides and bismuth triphenyl Bi(Ph) 3 . [1,2,4,[6][7][8][9][10][11] Halides are known to be toxic and corrosive. Bi(Ph) 3 is safer and offers remarkable advantages in terms of thermal stability and clean sublimation.…”
mentioning
confidence: 99%
“…Quantum size effect on the optical band gap was discussed in the literature [26][27][28][29][30]. The effect of structure on the optical band gap results from the fact that the number of grains per unit cell and the number of spaces per unit cell affect the density of the unit cell (in the present work molecular weight = 461.96 g/mol, density = 8.449 g/cm 3 ). Bismuth in Bi 2 O 2.75 and Bi 2 O 3 generally tends to occupy octahedral positions, since the additional oxygen required for octahedral coordination of Bi is provided by the oxygen atoms in the host matrix through non-bonding coordination, and so structures based on heavy metal oxide occur [31].…”
Section: Optical and Dielectric Propertiesmentioning
confidence: 94%
“…Significant applications of bismuth oxides in the fields such as microelectronics [1], sensor technology [2], optical coatings [3], transparent ceramic glass manufacturing [4] have been discovered during the last years. The material is characterized by a large energy band-gap, high photoconductivity, high refractive index, dielectric permittivity and photoluminescence.…”
Section: Introductionmentioning
confidence: 99%
“…Since bismuth oxide (Bi 2 O 3 ) has been known to exhibit remarkably useful solid-state properties including significant energy band gap (2.85 and 2.58 eV for the monoclinic α-Bi 2 O 3 and the tetragonal β-Bi 2 O 3 phases, respectively), high refractive index, high dielectric permittivity, and marked photoconductivity [1][2][3][4], it can be used for optical coatings [5], gas sensor technology [6], microelectronics [7], and ceramic glass manufacturing [8]. In addition, Bi 2 O 3 is a component of various important electroceramic oxides including Bi-Sr-Ca-Cu-O superconductors [9], and SrBi 2 Ta 2 O 9 /SrBi 2 Nb 2 O 9 ferroelectric oxides, which have applications in non-volatile computer memories [10][11][12].…”
Section: Introductionmentioning
confidence: 99%