Epitaxial Growth of Bendable Cubic NiO and In2O3 Thin Films on Synthetic Mica for p- and n-type Wide-Bandgap Semiconductor Oxides

Abstract

<jats:title>Abstract</jats:title><jats:p>Bendable p-type NiO and n-type In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin films were epitaxially grown on synthetic mica using mist chemical vapor deposition. It was found that at a growth temperature of 400 °C, epitaxially grown cubic (111) NiO thin films developed twin rotational domains, and the epitaxial relationship between each domain and the substrate was (111) NiO [1-10] or [10-1] || (001) synthetic mica [100]. In the visible light region, the epitaxial NiO thin films showed high transparencies, and their cut-offs appeared in the UV region. Additionally, at a growth temperature of 500 °C, cubic (111) In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin films with and without Sn doping were epitaxially grown on synthetic mica. As a result of the plasma oscillation of free carriers, Sn-doped In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin films exhibited reflection characteristics in the infrared region, while maintaining their visible light transmission characteristics. Furthermore, compared with non-doped In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>, Sn doping decreased the sheet resistance by two digits.</jats:p>

Toward flexible memory application: high-performance phase-change magnetic material Fe:GeTe films realized via quasi-van der Waals epitaxy

“…Although the {204} reflection of mica is two-fold symmetric, the three observed peaks with a 120° interval for the mica substrate show a pseudo-three-fold symmetry. 45,46 This pseudo-three-fold symmetry is previously ascribed to three rotated structures with similar plane spacing and distribution. 45 In the upper half of Fig.…”

“…Considering that the rocksalt structures exhibit three-fold symmetry, the six-fold peaks observed in the {200} reflections of the Fe:GeTe are attributed to an in-plane twin domain structure. 46 The diffraction peaks of the {200} Fe:GeTe reflection were observed at the same positions as those of the {204} mica reflection, indicating that the Fe:GeTe thin film was grown along the in-plane direction of the mica substrate. A schematic of an epitaxial Fe:GeTe/mica film with the determined orientation relationship, (111) Fe:GeTe 8(001) mica and h1% 10i Fe:GeTe 8[100] mica , is constructed and presented in Fig.…”

Epitaxial Growth of Vertically Aligned Antimony Selenide Nanorod Arrays for Heterostructure Based Self‐Powered Photodetector

“…ITO and ZnO:B are both n-type wide-bandgap semiconductors that not only form heterojunctions with the Sb 2 Se 3 layer but also serve as growth substrates for the Sb 2 Se 3 layer. [60,61] The properties of growth substrates determine the growth direction of (Sb 4 Se 6 ) n ribbons. [62] The growth direction of the (Sb 4 Se 6 ) n ribbons affects the carrier transport characteristics, thus influencing device performance.…”

Strain-Induced Modulation of Resistive Switching Temperature in Epitaxial VO2 Thin Films on Flexible Synthetic Mica

“…Although 2D materials have no dangling bonds at the cleavage surface, epitaxial thin films are grown by van der Waals epitaxy. Heteroepitaxial growth of various oxide thin films, such as VO 2 , − MoO 2 , ZnO, , NiO, In 2 O 3 , Al-doped ZnO (AZO), ε-Fe 2 O 3 , and κ-Ga 2 O 3 , on muscovite mica and synthetic mica has been previously demonstrated. Furthermore, it has been shown that inducing bending stress in epitaxial thin films grown by van der Waals epitaxy changes the resistivity of ZnO and the magnetic anisotropy of ε-Fe 2 O 3 . , …”

“…Mist chemical vapor deposition (CVD) was utilized to grow epitaxial VO 2 thin films on flexible synthetic mica. In previous studies, we have demonstrated van der Waals epitaxy of various oxides, such as ZnO, NiO, In 2 O 3 , and κ-Ga 2 O 3 , by mist CVD. In addition, VO 2 thin films grown on rigid quartz substrates by mist CVD had high visible transmittance and exhibited large changes in the infrared transmittance with MIT .…”