Epitaxial Growth of A1N by Plasma Source Molecular Beam Epitaxy

Auner, G. W.; Lenane, T. D.; Ahmad, Fayyaz; Naik, R.; Kuo, P. K.; Wu, Zhe

doi:10.1007/978-94-011-0173-8_35

Cited by 18 publications

(5 citation statements)

References 2 publications

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“…As the deposition temperature increases the films get smoother. This model is in agreement with our previous studies [5,6] on the temperature effect on the quality of AlN films deposited on silicon, sapphire, and Lely grown substrates. Symmetric XRD scans on all the samples displayed significant intensity from the SiC (0002) peak near 2θ=35.7 o that severely overlaps the AlN (0002) peak, despite the intentional 3.5 o off-cut of the substrates.…”

Section: Resultssupporting

confidence: 82%

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Temperature Effect on the Quality of A1N thin Films

Thompson

Drews

Huang

et al. 1999

MRS Internet j. nitride semicond. res.

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AlN thin films were deposited at various substrate temperatures via Plasma Source Molecular Beam Epitaxy. The films were grown on 6H-SiC (0001) substrates. Reflection High Energy Electron Diffraction and Atomic Force Microscopy showed a dramatic change in the surface morphology of the film grown at 640 o C. This is attributed to a change in the growth mechanism from pseudomorphic at lower temperatures to three-dimensional at higher than 640 o C temperatures. Photoreflectance measurements showed an absorption shift toward 200 nm as the deposition temperature increases which is attributed to the change in the growth mechanism at higher temperatures. X-Ray Diffraction was unable to conclusively determine the AlN (0002) peak due to a significant diffuse intensity from the SiC (0002) peak. A MIS structure was created by depositing Pt contacts on the film grown at 500 o C. I-V measurements showed that the Pt/AlN contact is Schottky.

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Section: Resultssupporting

confidence: 82%

“…This flux is further accelerated by negative bias applied to the substrate. The PSMBE system is described in detail elsewhere [5]. AlN films were grown at 440 o C, 500 o C, 560 o C, 640 o C, and 800 o C using a substrate bias voltage of -15 eV which is optimum for our PSMBE system.…”

Section: Introductionmentioning

confidence: 99%

Temperature Effect on the Quality of A1N thin Films

Thompson

Drews

Huang

et al. 1999

MRS Internet j. nitride semicond. res.

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“…A more detailed description of the PSMBE system used for this study can be found elsewhere. [17,18] After deposition and before removal from the chamber, some of the AlN films were characterized in situ using reflection highenergy electron diffraction (RHEED). The RHEED system uses a differentially pumped Staib Instruments EK-2035-R electron source.…”

Section: Experimental Materialsmentioning

confidence: 99%

“…[6,8,13,15,16] In this article, we report on the XPS analysis of ten samples of AlN film deposited on silicon and sapphire substrates by a plasma source molecular beam epitaxy (PSMBE) method. [17,18] The XPS analyses were conducted using a monochromatized Al X-ray source, and all samples were depth profiled using argonion sputtering. Owing to the generally high resolution of the data collection process, particular attention has been given to the fitting of the various chemical states found within the elemental data peaks.…”

Section: Introductionmentioning

confidence: 99%

XPS analysis of aluminum nitride films deposited by plasma source molecular beam epitaxy

Rosenberger

Baird

McCullen

et al. 2008

Surface & Interface Analysis

284

161

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aTen samples of crystalline aluminum nitride (AlN) film were deposited on sapphire and silicon substrates by a plasma source molecular beam method. The samples were analyzed using X-ray photoelectron spectroscopy (XPS) depth profiling and high-resolution X-ray diffraction. Oxygen levels were observed to decrease exponentially from the surface into the bulk film. Aluminum, nitrogen and oxygen peaks were fitted with subpeaks in a consistent manner and the subpeaks were assigned to chemical states. AlN subpeaks were observed at 73.5 eV for Al2p and 396.4 eV for N1s. An N1s subpeak at 395.0 eV was assigned to N-N defects. No direct N-O bonds are assigned; rather it is proposed that an N-Al-O bond sequence is the source of higher binding energy N1s subpeaks. The observations in this study support a model in which oxygen is bound only to aluminum in the form of Al-O octahedral complexes dispersed or clustered throughout the main AlN matrix or as Al-O bonds on the crystal grain boundaries. The data also suggest that the AlN lattice parameters are related to oxygen content, since the c-axis is observed to increase with increasing oxygen content.

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“…The growth of AlN films was performed at 650 °C in a PSMBE apparatus with a background pressure of 6×10 -10 Torr. During the film growth an argon/nitrogen flow (40/10 sccm) of 99.999% purity was introduced into hollow cathode plasma source [5]. The plasma was operated at 13.56 MHz with an input power of 150 W. The source-to-substrate distance was 0.26m and the growth chamber pressure was maintained at 4.5×10 -4 Torr.…”

Section: Methodsmentioning

confidence: 99%

Growth of a‐plane AlN on r‐plane sapphire by plasma source molecular beam epitaxy

Danylyuk

Perooly

et al. 2005

phys. stat. sol. (c)

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We report the epitaxial growth of a-plane AlN on r-plane sapphire (Al 2 O 3 ) substrates with an AlN nucleation layer. The AlN film is identified to be non polar and of a-plane orientation ( 0 2 11 _ ) which follows the r-plane Al 2 O 3 . The epitaxial films of thickness 0.34 µ were grown at low temperature (650 °C) by Plasma Source Molecular Beam Epitaxy (PSMBE). Initially we deposited a thin (50 Å) buffer layer of AlN on a 3 inch r-plane sapphire substrate at 400 °C in argon/nitrogen plasma followed by a 10 min annealing at 650 °C. The reflection high energy electron diffraction (RHEED) method was used for in situ structural characterization during the growth process. The a-plane growth has been confirmed by ex situ high resolution X-ray diffraction (XRD). Only the a-plane reflection peak appears at 2θ = 59.5º. The surface morphology of the films was examined by atomic force microscopy (AFM). Optical properties of the films have been studied using reflection spectroscopy in the 175-3300 nm wavelength range.

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Epitaxial Growth of A1N by Plasma Source Molecular Beam Epitaxy

Cited by 18 publications

References 2 publications

Temperature Effect on the Quality of A1N thin Films

Temperature Effect on the Quality of A1N thin Films

XPS analysis of aluminum nitride films deposited by plasma source molecular beam epitaxy

Growth of a‐plane AlN on r‐plane sapphire by plasma source molecular beam epitaxy

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