“…[6,8,13,15,16] In this article, we report on the XPS analysis of ten samples of AlN film deposited on silicon and sapphire substrates by a plasma source molecular beam epitaxy (PSMBE) method. [17,18] The XPS analyses were conducted using a monochromatized Al X-ray source, and all samples were depth profiled using argonion sputtering. Owing to the generally high resolution of the data collection process, particular attention has been given to the fitting of the various chemical states found within the elemental data peaks.…”