Epitaxial growth of a monolayer WSe ₂ -MoS ₂ lateral p-n junction with an atomically sharp interface

Abstract

Electronic junctions on edge Two-dimensional materials such as graphene are attractive materials for making smaller transistors because they are inherently nanoscale and can carry high currents. However, graphene has no band gap and the transistors are “leaky”; that is, they are hard to turn off. Related transition metal dichalcogenides (TMDCs) such as molybdenum sulfide have band gaps. Transistors based on these materials can have high ratios of “on” to “off” currents. However, it is often difficult to make a good voltage-biased (p-n) junction between different TMDC materials. Li et al. succeeded in making p-n heterojunctions between two of these materials, molybdenum sulfide and tungsten selenide. They did this not by stacking the layers, which make a weak junction, but by growing molybdenum sulfide on the edge of a triangle of tungsten selenide with an atomically sharp boundary Science , this issue p. 524

Chemical Vapor Deposition of High‐Quality Large‐Sized MoS2 Crystals on Silicon Dioxide Substrates

“…The corresponding atomic model is shown in Figure 2e. Because the signal intensity in the STEM–ADF image is directly related to the average atomic number (Z), STEM–ADF image can thus be used to visualize the spatial distribution of Mo ans S due to their different image contrast levels 35. The sharp atomic images indicate that our samples have a high crystalline quality, in accordance with previous reports.…”

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

“…Therefore, there is still a huge room for further study on the controlled synthesis of high‐quality and large‐scale single crystalline 2D GIVMCs. Moreover, in‐situ growth of vertical ( Figure 11 a) and lateral (Figure 11b) heterostructures are very important for exploring the novel physical properties, considering that most of the reports on 2D GIVMCs is currently based on the transferred heterojunctions,130, 243, 244 which may harm the electronic properties231, 240 due to the dangling bonds and adsorbates at the interface. In addition, graphene is an ideal template to promote the nucleation and growth of other 2DLMCs crystals for producing functional hybrid structures via CVD method (Figure 11c),198, 204, 207 which may result in the modulation of the electric and optical properties coupled with graphene.…”

“…Van der Waals (vdW) heterostructures composed of 2D layered materials have been attempted intensively recently due to the novel physical properties covering a wide range of electronic, optical, and optoelectronic systems 198, 199, 200, 201, 202, 203, 204, 205, 206, 207, 208, 209, 210, 211, 212, 213, 214, 215, 216, 217, 218, 219, 220, 221, 222, 223, 224, 225, 226, 227, 228, 229, 230, 231, 232, 233, 234, 235, 236, 237, 238, 239, 240, 241, 242. Jo and co‐workers130 synthesized polymorphic 2D tin‐sulfides of either p‐type SnS or n‐type SnS 2 via adjusting hydrogen during the process.…”

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

“…CVD is a well‐established technology that has been demonstrated as a facile method for synthesizing large‐scale monolayer crystals, including graphene, MX 2 ,73, 110, 126, 127, 128, 129, 130, 131, 132, 133, 134 and their heterojunctions 135, 136, 137, 138, 139, 140. Compared with the exfoliation method, the direct synthesis of few‐layer and monolayer MX 2 by CVD is critical to large‐scale applications.…”