Epitaxial growth and magnetic properties of h-LuFeO3 thin films

Kinetic Simulations of in-situ Diffracted Intensities During Pulsed Laser Deposition of LuFeO3: Effect of Pulse Laser Frequency

“…Multiferroic materials have attracted a lot of attention because of their unique physical properties. Hexagonal LuFeO 3 is a prototypical example of a single-phase multiferroic compound, since it exhibits simultaneously ferroelectric and magnetic ordering at room temperature [1][2][3][4] . For the epitaxial growth of single-crystalline thin films of LuFeO 3 and other Lu-Fe-O phases pulsed-laser deposition (PLD) is frequently used [4][5][6][7] .…”

Structure Quality of LuFeO3 Epitaxial Layers Grown by Pulsed-Laser Deposition on Sapphire/Pt

“…Epitaxial h-RFeO 3 thin films have been deposited on various substrates including Al 2 O 3 (0001), yttrium-stabilized zirconium oxide (YSZ) (111), and Al 2 O 3 (0001) buffered with Pt (111) layers [6][7][8][9]. All the epitaxial growth occurs along the c-axis of h-RFeO 3 in order to satisfy the triangular symmetry matching and to maximize the effect of interface energy with the goal to stabilize the hexagonal phase in the grown thin film.…”

“…The epitaxial orientation is determined by the minimum free energy, which is related to the bonding across the substrate-epilayer interface and to the mismatch of the substrate and layer lattices. It is recognized that, despite the triangular symmetry matching on the abovementioned substrates, there is no obvious lattice match between h-RFeO 3 and Al 2 O 3 (0001) (a = 4.7602 Å), yttrium-stabilized zirconia (YSZ) (111) (a = 7.30 Å), or Pt (111) (a = 5.548 Å) [10].Nevertheless, an epitaxial growth of h-LuFeO 3 (LFO) could be obtained using the pulsed-laser deposition [6][7][8][9]11]. This means that the azimuthal epitaxial orientation of h-LuFeO 3 films cannot be explained simply by the lattice mismatch.…”

“…A growth transition from two-dimensional (2D) to three-dimensional growth was found at deposition temperatures of T d > 573 K for thin Pt films deposited by PLD onto ZrO 2 [17]. A complete coverage of the grown Pt layer was revealed for a deposition temperature smaller than 573 K [17].X-ray diffraction analysis of h-LuFeO 3 layers was restricted in former works to the acquisition of X-ray diffraction (XRD) patterns and X-ray diffraction rocking curves of a specific diffraction spot [4][5][6][7][8][9]11]. To our knowledge, there is a lack of information regarding the mosaicity in terms of misorientation and dimension of block composing the LFO crystalline layer.…”

“…Nevertheless, an epitaxial growth of h-LuFeO 3 (LFO) could be obtained using the pulsed-laser deposition [6][7][8][9]11]. This means that the azimuthal epitaxial orientation of h-LuFeO 3 films cannot be explained simply by the lattice mismatch.…”