Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices

Kum, Hyun; Lee, Doeon; Kong, Wei; Kim, Hyun‐Seok; Park, Yongmo; Kim, Yunjo; Baek, Yongmin; Bae, Sang‐Hoon; Lee, Kyusang; Kim, Jeehwan

doi:10.1038/s41928-019-0314-2

Cited by 164 publications

(110 citation statements)

References 118 publications

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“…Furthermore, although a major technological challenge, transfer of the TMDC films from the growth substrate to the target substrate is actively researched in the 2D community. [ 300,301 ] Nevertheless, even if the transfer process lifts the temperature restrictions, the high‐temperature ALD processes will have to compete with more established (MO)CVD TMDC processes.…”

Section: Applications Of Atomic Layer Deposited 2d Metal Dichalcogenidesmentioning

confidence: 99%

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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it was soon replaced by other materials. Research on the fundamental properties and preparation of TMDC monolayers in solution (1986), [8] on single-crystal substrates in ultrahigh vacuum (2001), [9] and in an accessible way using mechanical exfoliation [10] (2005) followed. It was the discovery of graphene in 2004 [11] with its ever expanding list of unique and exciting properties, phenomena, and potential applications [12] that amassed broad attention to 2D materials and resulted in the 2010 Nobel Prize in Physics awarded to Andre Geim and Konstantin Novoselov. Tremendous efforts have been put toward synthesis and applications of graphene, including the billion euro Graphene Flagship project funded by the European Union. [13,14] Graphene is a semimetal, however, and the need to have semiconducting materials for many crucial applications, in particular in electronics, has led researchers to search for other 2D materials. The scientific community turned to TMDCs following breakthroughs in observation of unique thickness-dependent properties, [15,16] monolayer synthesis using chemical vapor deposition (CVD), [17,18] and demonstration of high-performance semiconductor devices [19-21] in 2010-2013 (Figure 1). Indeed, in 2013 the number of scientific publications on TMDCs, in particular MoS 2 , nearly tripled over 2012, and the strong growth has continued to date, fueled by advances in synthesis, new devices, and exciting physical phenomena. The explosive growth in MoS 2 research has also expanded to other TMDCs, [22] resulting in yet new phenomena and potential applications being found. [23-26] It is now clear that TMDCs are remarkable in many ways. Their layered crystal structure gives rise to fundamental physics not seen in 3D materials, which enables novel devices and applications. [25,26,32,34-36] The layered structure also gives TMDCs their highly anisotropic properties, extremely high specific surface areas, possibility to intercalate different species between the layers, and stability as ultrathin sheets down to three atomic layers thick. The TMDC family contains dozens of different materials from semiconductors to semimetals, metals, and even superconductors. [5,22,25,34] However, TMDC research is still mostly in the early discovery stages and the investigations of TMDCs largely continue using flakes produced by mechanical exfoliation of bulk crystals. [10,26] Unfortunately, this method cannot be scaled up for practical 2D transition metal dichalcogenides (TMDCs) are among the most exciting materials of today. Their layered crystal structures result in unique and useful electronic, optical, catalytic, and quantum properties. To realize the technological potential of TMDCs, methods depositing uniform films of controlled thickness at low temperatures in a highly controllable, scalable, and repeatable manner are needed. Atomic layer deposition (ALD) is a chemical gas-phase thin film deposition method capable of meeting these challenges. In this review, the applications evaluated for ALD TMDCs are systematically...

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Section: Applications Of Atomic Layer Deposited 2d Metal Dichalcogenidesmentioning

confidence: 99%

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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“…[ 13 ] In contrast, a single‐crystalline heterostructure with high crystalline purity and well‐defined interface would overcome these obstacles and exhibit impressive improvements: lower intrinsic carrier concentration, higher carrier mobility, and longer carrier diffusion length. [ 14 ] Such characteristics make these materials an ideal medium for charge transport and realizing high‐performance self‐powered photodetectors. In addition, for commercial applications, large‐sized single‐crystalline heterostructures will further improve their potential for large‐scale optoelectronic integration.…”

Section: Figurementioning

confidence: 99%

Solution‐Grown Large‐Sized Single‐Crystalline 2D/3D Perovskite Heterostructure for Self‐Powered Photodetection

Zhang

Liu

et al. 2020

Advanced Optical Materials

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that is simultaneously sensitive and costeffective. [1e,4] Today, a wide variety of photodetectors based on inorganic and organic semiconductor heterostructures are at our disposal. For example, MoS 2 / pyramid Si heterostructures have enabled the construction of photodiodes with ultrahigh detectivity in self-driven operation mode. [5] In rubrene-7,7,8,8tetracyanoquinodime heterostructures, the charge-transfer interface presents an external quantum efficiency of nearly 100%. [6] Compared with those inorganic and organic semiconductors, the recently emerged organic-inorganic hybrid perovskites provide several specific features to create heterostructures for novel photodetection devices. For instance, their excellent semiconductor properties, including large absorption coefficient, long carrier diffusion length, and high carrier mobility can give rise to efficient photocurrent generation. [7] Furthermore, their unique structural flexibility will enable a wide tunability in the bandgap and dimensionality, allowing for the creation of new heterostructures with exotic device properties. [8] Earlier attempts utilized ion-exchange technique to create 3D/3D MAPbX 3 (X = Br, I) heterostructures, and realized selfpowered photodetectors; [9] since then the advance in structural design extended this material family to 2D/2D systems that exhibit enhanced heterojunction stability; however, at the cost of the device performance. [10] To make a trade-off between the structural stability and device efficiency, notably, recent efforts have been devoted to fabricating 2D/3D hybrid perovskite heterostructures. [11] This integration can combine the hydrophobic properties of 2D perovskites with the superior charge-transport properties of their 3D counterparts, as has been demonstrated by their remarkable implementation in the optoelectronic field. [12] However, until now, those prepared 2D/3D perovskite heterostructures are typically polycrystalline or amorphous, in which the charge transport is usually plagued by unavoidable boundaryinduced defects and rich chemical disorders, limiting the optoelectronic performance of the resulting devices. [13] In contrast, a single-crystalline heterostructure with high crystalline purity and well-defined interface would overcome these obstacles and exhibit impressive improvements: lower intrinsic carrier concentration, higher carrier mobility, and longer carrier diffusion length. [14] Such characteristics make these materials an ideal medium for

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“…However, this heterogenous epitaxial thin lm growth limits the applications to the curved and exible thermoelectrics due to the clamping effect, inherited from strong bond between overlayer lm and substrate at interface, of epitaxial thin lms on the at substrate 19,20 . Furthermore, it is extremely di cult to grow high quality epitaxial thin lms on the materials with large lattice mismatch or on the exible matters 21 . These obstacles have been solved by using the exible scaffold materials such as carbon nanotube anchored with highly oriented Bi 2 Te 3 nanocrystals, providing a promising way for practical exible thermoelectric devices 22 .…”

Section: Introductionmentioning

confidence: 99%

“…The naturally-formed pseudomorphic Te monolayer on the sapphire substrate during in-situ spontaneous vdWE growth is of bene t in practical lift-off process in chemical solution, working as a sacri cial layer. Additionally, the sacri cial Te monolayer is expected to have a high etch selectivity, allowing to overcome the well-known shortcoming, a slow release rate 21,26 , of chemical lift-off for larger substrates.…”

Section: Introductionmentioning

confidence: 99%

High-performance freestanding thermoelectric membrane by intact exfoliation of van der Waals epitaxial bismuth antimony telluride film

Park

Lee

et al. 2020

Preprint

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Separation of epitaxial thin films on growth substrate and transferring onto other materials for functional heterostructures have boosted the transformative impact on science and technology. However, this scheme has proved challenging in thin film thermoelectrics, but promised a vast range of applications beyond the limited device configurations of bulk thermoelectrics. Here, we demonstrate that the Bi0.5Sb1.5Te3 (BST) epitaxial thin film on sapphire substrate grown by spontaneous van der Waals epitaxy (vdWE) is exfoliated and transferred onto versatile materials, creating the high-quality freestanding thermoelectric membranes. Unprecedented millimeter-size vdWE BST membranes are produced by etching pseudomorphic Te monolayer on the surface of sapphire substrate in dilute HF solution. The intact exfoliation and direct transfer for vdWE BST membranes ensures a high thermoelectric performance, maintaining the high-quality crystallinity and subsequently showing the remarkable zT value (~0.9 at 300 K) in thin film thermoelectrics. These results represent the realization of long pursued but yet to be demonstrated high-performance thin film thermoelectrics, paving the way for design and fabrication of arbitrary shaped thermoelectric devices.

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Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices

Cited by 164 publications

References 118 publications

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Solution‐Grown Large‐Sized Single‐Crystalline 2D/3D Perovskite Heterostructure for Self‐Powered Photodetection

High-performance freestanding thermoelectric membrane by intact exfoliation of van der Waals epitaxial bismuth antimony telluride film

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