Epitaxial Growth and Characterization of Fe Thin Films on Sapphire by Laser Ablation

Abstract

Laser ablation of a high purity (99.7%) target was used to deposit Fe on a single crystal sapphire substrate. The crystalline structure of the deposit was determined by X‐ray diffraction (XRD). A change in the crystal structure of the deposit as a function of substrate temperature is reported. This change is related to the magnetic properties of the film. The Fe films were quantitatively analyzed in situ by X‐ray Photoemission Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) in order to determine the thickness of the layer and the mode of growth. Results show that the growth mechanism of Fe on sapphire may correspond to a layer by layer model. A carbon film was deposited on top of the Fe film in order to prevent Fe oxidation when exposed to the ambient. The thickness of this carbon layer was determined to be less than 4 nm.

Pulsed Laser Deposition of Crystalline Fe Nanoparticles on Al2O3 Substrates

“…The deposition rate per laser pulse was then determined. This calibration procedure is explained in detail in a separate paper [8]. Results show that the C layer is approximately 4 nm thick.…”