Epitaxial growth and characterization of zinc-blende gallium nitride on (001) silicon

Lei, Ting; Moustakas, T. D.; Graham, R. J.; He, Yingfeng; Berkowitz, S. J.

doi:10.1063/1.350642

Cited by 354 publications

(105 citation statements)

References 36 publications

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“…These applications usually require GaN in the wurtzite and zinc blende phases depending on the synthetic techniques (Lei et al, 1992). In addition, GaN is also characterized to have high hardness, low compressibility, high ionicity and high thermal conductivity.…”

Section: Properties Structures and Applications Of Ganmentioning

confidence: 99%

Novel Pressure-Induced Structural Transformations of Inorganic Nanowires

Song¹

2011

Nanowires - Fundamental Research

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Section: Properties Structures and Applications Of Ganmentioning

confidence: 99%

Novel Pressure-Induced Structural Transformations of Inorganic Nanowires

Song¹

2011

Nanowires - Fundamental Research

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“…Different combinations of group III-V elements have produced more than twenty-five (25) III-V compound semiconductors, examples of which are indium nitride (InN), gallium arsenide (GaAs), gallium nitride (GaN), aluminum nitride (AlN). Group IIInitride are now a widely studied class of semiconductor materials, and they have found commercial success in recent twenty years as light emitting diodes and lasers in the green to near-ultraviolet regions of the electromagnetic spectrum [5][6][7][8][9][10][11]. GaN is a very hard material that has a wurtzite crystal structure.…”

Section: Introductionmentioning

confidence: 99%

Reflection coefficient and optical conductivity of gallium nitride GaN

Akinlami¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Here we report the reflection coefficient and optical conductivity of gallium nitride (GaN). The reflection coefficient obtained in the photon energy range 2-10 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the reflection coefficient has its highest value 0.54 at the photon energy 7.0 eV. Variation of the real part of optical conductivity with photon energy shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the real part of optical conductivity has the maximum value 5.75·10 15 for the photon energy 7.0 eV, and it decreases until coming to zero at 10.0 eV. The peaks indicate regions of deeper penetration of electromagnetic waves, and they also show high conductivity. The imaginary part of optical conductivity obtained for GaN in the photon energy range 2.0 to 10.0 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that it has a minimum value of -6.46·1015 for the photon energy 8.0 eV and a maximum value at -1.2·10 15. This implies that there is a reduction in conductivity of GaN, and likewise, reduction in the propagation of electromagnetic waves in this region.

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“…The epitaxy of metastable, cubic GaN on GaAs (001) substrates has attracted some interest recently since c-GaN layers and the GaAs substrate have a common cleavage plane, they are considered to be well suited for the fabrication of laser cavities with cleaved facets [1][2][3][4][5][6][7][8]. [2].…”

Section: Introductionmentioning

confidence: 99%

Mechanisms of Optical Gain in Cubic GaN and InGaN

Holst

Hoffmann

Broser

et al. 1999

MRS Internet j. nitride semicond. res.

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The epitaxial growth of zinc-blende (cubic) GaN and InGaN on GaAs with a common cleavage plane and readily high-quality, low-cost wafers may be considered as an alternative approach for the future realization of cleaved laser cavities. To obtain detailed information about the potential of cubic GaN and InGaN for device applications we performed optical gain spectroscopy accompanied by time-integrated and time-dependent photoluminescence measurements at 2 K and 300 K. From intensity-dependent gain measurements, the identification of the gain processes was possible. For moderate excitation levels, the biexciton decay is likely to be responsible for a gain structure at 3.265 eV in cubic GaN [10]. For the highest pump intensities, the electron-hole-plasma is the dominant gain process, providing gain values up to 200 cm -1 . Furthermore cubic GaN samples with different cavity lengths from 250 to 600 µm were cleaved to investigate the influence of the sample geometry on the gain mechanisms. In these samples increased gain values up to 150 cm -1 as well as lower threshold excitation densities were observed, indicating the potential of cubic GaN for device applications. The results of GaN will be compared with intensity-dependent gain measurements on InGaN samples, grown on GaAs with varying In-content. The observed gain mechanisms in cubic InGaN will be discussed in detail.

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Epitaxial growth and characterization of zinc-blende gallium nitride on (001) silicon

Cited by 354 publications

References 36 publications

Novel Pressure-Induced Structural Transformations of Inorganic Nanowires

Novel Pressure-Induced Structural Transformations of Inorganic Nanowires

Reflection coefficient and optical conductivity of gallium nitride GaN

Mechanisms of Optical Gain in Cubic GaN and InGaN

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