Epitaxial Growth and Characteristics of Nonpolar a-Plane InGaN Films with Blue-Green-Red Emission and Entire In Content Range

Abstract

Nonpolar ( 11 2 ¯ 0 ) plane In x Ga1−x N epilayers comprising the entire In content (x) range were successfully grown on nanoscale GaN islands by metal-organic chemical vapor deposition. The structural and optical properties were studied intensively. It was found that the surface morphology was gradually smoothed when x increased from 0.06 to 0.33, even though the crystalline quality was gradually declined, which was accompanied by the appearance of phase separation in the In x Ga1−x N layer. Photoluminescence wavelengths of 478 and 674 nm for blue and red light were achieved for x varied from 0.06 to 0.33. Furthermore, the corresponding average lifetime (τ 1/e ) of carriers for the nonpolar InGaN film was decreased from 406 ps to 267 ps, indicating that a high-speed modulation bandwidth can be expected for nonpolar InGaN-based light-emitting diodes. Moreover, the bowing coefficient (b) of the ( 11 2 ¯ 0 ) plane InGaN was determined to be 1.91 eV for the bandgap energy as a function of x.

High-Performance Solar-Blind Photodetector Based on (010)-Plane β-Ga2O3 Thermally Oxidized from Nonpolar (110)-Plane GaN

“…The nonpolar (110) a -plane GaN film with a thickness of ∼1 μm used in this work was epitaxially grown on a (102) r -plane sapphire substrate using a low-pressure MOCVD system. The growth parameters are similar to those used in our previous studies. , Moreover, a ∼1 μm thick polar (002) c -plane GaN film was prepared as a comparative experiment. The thickness of the GaN films is determined with the in situ monitoring system.…”

“…The growth parameters are similar to those used in our previous studies. 32,33 Moreover, a ∼1 μm thick polar (002) c-plane GaN film was prepared as a comparative experiment. The thickness of the GaN films is determined with the in situ monitoring system.…”

Enhancing the Performance of GaN-Based Light-Emitting Diodes by Incorporating a Junction-Type Last Quantum Barrier

“…Nitride light-emitting diodes (LEDs) have garnered increasing attention and extensive amounts of research due to their low power consumption and compact size [1][2][3]. One common problem facing GaN-based LEDs is that the electrons can be easily injected from the active regions into the p-GaN region, which decreases the recombination of the carriers within the active regions, owing to the high mobility and small effective mass of the electrons.…”

Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film

“…Meanwhile, a bandwidth of 540 MHz for (1122)-plane semipolar green LEDs had been demonstrated by growing an (1122)-plane GaN template whose crystalline quality was similar to or close to that of polar GaN [21]. The research on nonpolar AlGaN-based ultraviolet light-related structures [22,23] and InGaN-based visible light-related structures [24,25] has been investigated, but there is still much room for the investigation of devices based on nonpolar III-nitrides. Obviously, the successful fabrication of nonpolar GaN templates is the basis for the realization of nonpolar GaN-based devices.…”