Epitaxial Ferrimagnetic Mn<sub>4</sub>N Thin Films on GaN by Molecular Beam Epitaxy

Zhang, Zexuan; Cho, Yong-Jin; Gong, Mingli; Ho, Shao-Ting; Singhal, Jashan; Encomendero, Jimy; Li, Xiang; Lee, Hyunjea; Xing, Huili Grace; Jena, Debdeep

doi:10.1109/tmag.2021.3085853

Cited by 4 publications

(4 citation statements)

References 42 publications

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“…This temperature‐dependent 2DHG density behavior is similar to previously reported GaN/AlN 2DHGs. [ 4,24 ] The Hall densities are however repeatable across Hall‐effect measurements and samples grown on different MBE systems. The reason for this discrepancy is not yet understood and needs further investigation.…”

Section: Resultsmentioning

confidence: 98%

“…InGaN/GaN 2DHGs have among the highest densities across all material systems, and just an order lower than the 2D crystal limit of ≈10 15 cm −2 . The large density of holes provide an epitaxial platform for investigation of scientific phenomena by possible integration of other compatible materials [ 24 ] such as ferrimagnetic Mn 4 N. AlGaN/AlN heterostructures designed using similar principles as presented here could be used for applications which need p s < 5 × 10 13 cm −2 .…”

Section: Discussionmentioning

confidence: 99%

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Very High Density (>10¹⁴ cm⁻²) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures

Chaudhuri

Zhang

Xing

et al. 2022

Adv Elect Materials

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High hole densities are desired in p‐channel field effect transistors to improve the speed and on‐currents. Building on the recently discovered undoped, polarization‐induced GaN/AlN 2D hole gas (2DHG), this work demonstrates the tuning of the piezoelectric polarization difference across the heterointerface by introducing indium in the GaN channel. Using careful design and epitaxial growths, these pseudomorphic (In)GaN/AlN heterostructures result in some of the highest carrier densities of >1014 cm−2 in a III‐nitride heterostructure—just an order below the intrinsic crystal limit of ≈1015 cm−2. These ultra‐high density InGaN/AlN 2DHGs show room temperature mobilities of 0.5–4 cm2 V−1 s−1 and do not freeze out at low temperatures. A characteristic alloy fluctuation energy of 1.0 eV for hole scattering in InGaN alloy is proposed based on the experiments.

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Section: Resultsmentioning

confidence: 98%

Section: Discussionmentioning

confidence: 99%

Very High Density (>10¹⁴ cm⁻²) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures

Chaudhuri

Zhang

Xing

et al. 2022

Adv Elect Materials

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“…Instead of (001) orientation, 111-oriented films can be grown on various substrates, such as 6H-SiC [232] and GaN. [233][234][235] Judging from the nanoelectron-beam diffraction patterns, the superlattice structure of antiperovskite-type Mn 4 N crystal is evident, even when using a MgO(111) substrate. [236] Noncollinear magnetic structures are favored in the 111-oriented Mn 4 N films, efficient STT and/or SOT-induced magnetization switching can be expected for bilayer systems in accordance with previous work.…”

Section: Crystal Orientation Dependencymentioning

confidence: 99%

Antiperovskite Magnetic Materials with 2p Light Elements for Future Practical Applications

Isogami

Takahashi

2022

Adv Elect Materials

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Light elements having 2p electrons such as B, C, and N are common elements that have played an important role in various functional materials. In particular, nitrides have long been used in the development of semiconductors, superconductors, and magnets. More recently, Fe‐ and Mn‐based antiperovskite‐type compounds with light elements have attracted considerable attention in the field of spintronic engineering, because of the development of intriguing and practical applications making them one of the key materials for future devices. In this article, it is first reviewed the evolution of applications and which light elements are employed. Then the representative applications and characteristics of the light elements, including magnetoresistive effects, magnetization switching, current‐spin and thermoelectric conversions, magnetic anisotropy, and domain nucleation are individually highlighted. Additionally, the crystal structure, fundamental properties, and theoretical study are addressed to enable a deeper understanding of the role of light elements in the unit cell. Beyond compounds with N, a demonstration using B and C is discussed to examine their effect on the magnetic structures of antiperovskite compounds. Finally, prospective and future strategies are discussed to build a platform of practical material based on light elements.

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“…an appropriate material that can be applied to the currentinduced domain wall motion (CIDWM) device due to its low spontaneous magnetization M s (60-110 emu cm −3 ), high uniaxial magnetic anisotropy K u (0.8-2.2 × 10 5 J m −3 ), high domain wall motion velocity (∼900 m s −1 ) and perpendicular magnetic anisotropy (PMA) [4][5][6][7][8]. CIDWM uses the spintransfer torque generated by the spin-polarized current as the driving force to drive the domain wall movement.…”

Section: Introductionmentioning

confidence: 99%

Enhanced perpendicular magnetic anisotropy of ferrimagnetic Mn₄N films deposited on the glass substrate

Li¹,

Xu²,

Gao³

et al. 2022

J. Phys. D: Appl. Phys.

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Mn4N films have been prepared on the glass substrate by reactive magnetron sputtering, using Mn3N2 as seed layer. Compared with Mn4N film directly grown on the glass substrate, the crystallinity and perpendicular magnetic anisotropy of the Mn4N film with the seed layer are significantly enhanced. By varying the thickness of Mn3N2 seed layer, the structural and magnetic properties have been systematically investigated. It has been shown that the seed layer thickness is pivotal in the growth of Mn4N with good crystallinity. The crystallinity of Mn4N first improves with increasing the layer thickness of Mn3N2, and degrade after an optimal thickness, which are related to the change of surface roughness of Mn3N2 layers. Mn3N2 layer not only promotes the growth of Mn4N film with c-axis orientation, but also provides additional N atoms to the growing surface to prevent Mn4N from being oxidized. This simple method can prepare high quality Mn4N films on the glass substrate, which show strong perpendicular magnetic anisotropy and suitable for spintronics applications.

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Epitaxial Ferrimagnetic Mn₄N Thin Films on GaN by Molecular Beam Epitaxy

Cited by 4 publications

References 42 publications

Very High Density (>10¹⁴ cm⁻²) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures

Very High Density (>10¹⁴ cm⁻²) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures

Antiperovskite Magnetic Materials with 2p Light Elements for Future Practical Applications

Enhanced perpendicular magnetic anisotropy of ferrimagnetic Mn₄N films deposited on the glass substrate

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Epitaxial Ferrimagnetic Mn4N Thin Films on GaN by Molecular Beam Epitaxy

Cited by 4 publications

References 42 publications

Very High Density (>1014 cm−2) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures

Very High Density (>1014 cm−2) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures

Antiperovskite Magnetic Materials with 2p Light Elements for Future Practical Applications

Enhanced perpendicular magnetic anisotropy of ferrimagnetic Mn4N films deposited on the glass substrate

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Epitaxial Ferrimagnetic Mn₄N Thin Films on GaN by Molecular Beam Epitaxy

Very High Density (>10¹⁴ cm⁻²) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures

Very High Density (>10¹⁴ cm⁻²) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures

Enhanced perpendicular magnetic anisotropy of ferrimagnetic Mn₄N films deposited on the glass substrate