Epitaxial electrodeposition of Cu2O on Ag substrates in sulfate baths

Dai, Dajin; Huang, Pei-Yu; Wu, Tzu-Ying; Shih, Chia-Lung; Chang, Liuwen

doi:10.1016/j.jcrysgro.2022.126983

Cited by 8 publications

(9 citation statements)

References 46 publications

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“…In other words, the film deposited on each substrate grain has a specific brightness, indicating that the morphology of the deposited film is affected strongly by the orientation of the substrate grain. This orientationdependent contrast provides an evidence that the films are likely deposited epitaxially [21,25]. Moreover, the SEM micrographs at high magnifications (Fig.…”

Section: Microstructurementioning

confidence: 67%

“…The intensity ratios among peaks of Cu2O should be roughly the same as those of Ag if the films were all grow epitaxially based on a cube-on-cube orientation relationship (OR). However, it is worth mentioning that at least four more ORs were identified between Cu2O and Ag in addition to the expected cube-on-cube OR [21]. Therefore, the intensities of the Cu2O peaks vary from one sample to another.…”

Section: Microstructurementioning

confidence: 95%

“…Spectrum shape and polarization of the detected luminescence signal is therefore determined by the radiative defects in the irradiated domains. It has been demonstrated in [21], that each domain in a Cu2O sample contains different density of grown-in dislocations. The densities of radiative defects may also be different in domains.…”

Section: Thin Filmsmentioning

confidence: 99%

“…One exception is that the epitaxy of Cu2O has been realized by electrodeposition [20]. As many as five orientation relationships between Cu2O and Ag substrate were recently identified by employing a combinatorial substrate approach and epilayers containing low dislocation densities were obtained [21].…”

Section: Introductionmentioning

confidence: 99%

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Luminescence properties of epitaxial Cu2O thin films electrodeposited on metallic substrates and Cu2O single crystals

Trinkler¹,

Dai²,

Chang³

et al. 2023

Preprint

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Luminescent properties of epitaxial Cu2O thin films were studied in 10-300 K temperature range and compared with luminescent properties of Cu2O single crystals. Cu2O thin films were deposited epitaxially by the electrodeposition method on either Cu or Ag substrates at different processing parameters, which determined the epitaxial orientation relationships and encapsulated surface. Cu2O (100) and (111) single crystal samples were cut from a crystal rod grown by the floating zone method. Luminescence spectra of thin films contain the same emission bands as single crystals around 720, 810 and 910 nm, characterizing VO2+, VO+ and VCu defects, correspondingly. Additional emission bands, whose origin is under discussion, are observed around 650-680 nm, while the exciton features are negligibly small. The relative mutual contribution of the emission bands varies depending on the particular thin film sample. Existence of the domains of crystallites with different orientation determines the polarization of luminescence. PL of both Cu2O thin films and single crystals is characterized with negative thermal quenching in the low temperature region, the reason of this phenomenon is discussed.

show abstract

Section: Microstructurementioning

confidence: 67%

Section: Microstructurementioning

confidence: 95%

Section: Thin Filmsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Luminescence properties of epitaxial Cu2O thin films electrodeposited on metallic substrates and Cu2O single crystals

Trinkler¹,

Dai²,

Chang³

et al. 2023

Preprint

View full text Add to dashboard Cite

show abstract

“…One exception is that the epitaxy of Cu 2 O has been realized via electrodeposition [ 29 ]. As many as five orientation relationships between Cu 2 O and Ag substrate were recently identified by employing a combinatorial substrate approach and epilayers containing low dislocation densities were obtained [ 30 ].…”

Section: Introductionmentioning

confidence: 99%

Luminescence Properties of Epitaxial Cu2O Thin Films Electrodeposited on Metallic Substrates and Cu2O Single Crystals

et al. 2023

Self Cite

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The luminescent properties of epitaxial Cu2O thin films were studied in 10–300 K temperature range and compared with the luminescent properties of Cu2O single crystals. Cu2O thin films were deposited epitaxially via the electrodeposition method on either Cu or Ag substrates at different processing parameters, which determined the epitaxial orientation relationships. Cu2O (100) and (111) single crystal samples were cut from a crystal rod grown using the floating zone method. Luminescence spectra of thin films contain the same emission bands as single crystals around 720, 810 and 910 nm, characterizing VO2+, VO+ and VCu defects, correspondingly. Additional emission bands, whose origin is under discussion, are observed around 650–680 nm, while the exciton features are negligibly small. The relative mutual contribution of the emission bands varies depending on the thin film sample. The existence of the domains of crystallites with different orientations determines the polarization of luminescence. The PL of both Cu2O thin films and single crystals is characterized by negative thermal quenching in the low-temperature region; the reason of this phenomenon is discussed.

show abstract

Photoelectrochemical properties of Cu2O/CuO microstructure grown on cu foil using dielectric barrier discharge plasmas

Alkareem,

Dakhil,

Ahmed

2024

J Nanopart Res

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Epitaxial electrodeposition of Cu2O on Ag substrates in sulfate baths

Cited by 8 publications

References 46 publications

Luminescence properties of epitaxial Cu2O thin films electrodeposited on metallic substrates and Cu2O single crystals

Luminescence properties of epitaxial Cu2O thin films electrodeposited on metallic substrates and Cu2O single crystals

Luminescence Properties of Epitaxial Cu2O Thin Films Electrodeposited on Metallic Substrates and Cu2O Single Crystals

Photoelectrochemical properties of Cu2O/CuO microstructure grown on cu foil using dielectric barrier discharge plasmas

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