Epitaxial Deposition of Silicon in a Barrel Reactor

Dittman, Frank W.

doi:10.1021/ba-1974-0133.ch035

Cited by 9 publications

(9 citation statements)

References 2 publications

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“…The assumption of a small wafer spacing relative to the wafer radius (i.e., A/Rt << 1), which was used to eliminate the z-dependence in the wafer problem (Eq. [5], [6]), clearly does not hold for the five-wafer case. This may explain the slightly larger differences between model predictions and experimental observations for the five-wafer run than those for the 50wafer run.…”

Section: Evaluation Of Kinetic Parametersmentioning

confidence: 93%

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Modeling and Analysis of Low Pressure CVD Reactors

Jensen

Graves

1983

J. Electrochem. Soc.

159

106

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A detailed mathematical model for the hot wall multiple‐disk‐in‐tube LPCVD reactor is developed by using reaction engineering concepts. This model includes the convective and diffusive mass transport in the annular flow region formed by the reactor wall and the edges of the wafers as well as the surface reactions on the reactor wall. In addition, the model describes the coupling of diffusion between and reaction on the wafers. Variations in gas velocities and diffusion fluxes due to net changes in the number of mols in the deposition are also taken into account as are nonisothermal operating conditions. The combined reactor equations are solved by orthogonal collocation. The deposition of polycrystalline Si from SiH4 is considered as a specific example, and the model is employed in estimation of kinetic rate constants from published reactor measurements. The effects on the growth rates and film thickness uniformity (within each wafer and from wafer to wafer) of variations in flow rates, reactor temperature profiles, and SiH4 concentration in the feed stream are analyzed. The model predictions show good quantitative agreement with published experimental data from different sources. Finally, recycle of reactor effluent is considered a typical commercial operating conditions, and it is demonstrated that this modification produces higher growth rates and better film uniformity than can be achieved in conventional LPCVD processing.

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Section: Evaluation Of Kinetic Parametersmentioning

confidence: 93%

“…The concentration of the reactant Sill4 between the wafers is governed by the continuity equation 2r dr By using Eq. [6], that 2N1 = --N2 according to the stoichiometry, and that the flux of inerts N3 --0, the balance takes the form…”

Section: Model Developmentmentioning

confidence: 99%

Modeling and Analysis of Low Pressure CVD Reactors

Jensen

Graves

1983

J. Electrochem. Soc.

159

106

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“…The parameter A~.i can be taken as equal to the parameter r used in Wilke's equation (6) for the mixture viscosity.…”

Section: Acknowledgmentmentioning

confidence: 99%

“…The chemical vapor deposition (CVD) of single crystal layers of III-V semiconductor compounds, such as GaAs, from the reaction between Group III organometallics and Group V hydrides has now been well established (1)(2)(3)(4)(5)(6)(7)(8)(9). The mechanism involved in these potentially very important processes or in similar processes [i.e., formation of II-VI semiconductor compounds (10)] is not understood and has only been briefly discussed (1,5,11).…”

Section: Acknowledgmentmentioning

confidence: 99%

“…Eversteyn and coworkers (1, 2) and Rundle (3,4) have developed models for the growth rate of silicon in horizontal reactors based on diffusion through a laminar sublayer adjacent to the susceptor, and on diffusion in a fully developed laminar flow, respectively. Fujii et al (5) developed a quantitative model of silicon deposition rates in vertical cylinder reactors, and quantitative studies were reported by Dittman (6).…”

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confidence: 99%

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Analysis of Transport Processes in Vertical Cylinder Epitaxy Reactors

Manke

Donaghey

1977

J. Electrochem. Soc.

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Momentum, heat and mass transfer processes were studied in a vertical cylinder reactor for the epitaxial growth of Si from SiC1 4 in H 2 by chemical vapor deposition. An analytical solution to the problem of heat and mass transfer in a tapered annulus is presented based on constant transport properties and fully-developed laminar tlow. The mean gas-phase temperature and deposition rate distribution of silicon are calculated within the reactor using the developing temperature model. Results of experimental studies of silicon deposition from SiC1 4 in H 2 at 1200°C in a vertical cylinder reactor are compared with the analytical results, and with other models of diffusion-controlled chemical vapor deposition. This study provides an analytical basis for epitaxial deposition rate distributions in vertical cylinder reactors, and for reactor design to improve the yield and uniformity of epitaxial growth • * This report was done with support from the United States Energy Research and Development Administration.• Any conclusions or opinions expressed in this report represent solely those of the authors and not necessarily those of The Regents of the University of California, the Lawrence Berkeley Laboratory or the United States Energy Research and Development Administration.-1-I.

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Micro-reaction engineering applications of reaction engineering to processing of electronic and photonic materials

Jensen

1987

Chemical Engineering Science

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Epitaxial Deposition of Silicon in a Barrel Reactor

Cited by 9 publications

References 2 publications

Modeling and Analysis of Low Pressure CVD Reactors

Modeling and Analysis of Low Pressure CVD Reactors

Analysis of Transport Processes in Vertical Cylinder Epitaxy Reactors

Micro-reaction engineering applications of reaction engineering to processing of electronic and photonic materials

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