Epitaxial Crystal Growth: Methods and Materials

Capper, P.; Irvine, S.J.C.; Joyce, Tim

doi:10.1007/978-0-387-29185-7_14

Cited by 16 publications

(17 citation statements)

References 109 publications

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“…Here, b In (β) is a β-dependent adsorption coefficient on the droplet surface for In similar to the one in Equation 2for Sb, and Ω InSb = 0.0680 nm 3 is the elementary volume of InSb pair in ZB InSb [36]. Since the droplet contains only In atoms, we can write the corresponding change in the droplet volume, which equals Ω In N In (where Ω In = 0.0261 nm 3 is the elementary volume of liquid In) [36]. At a fixed R, we can present the volume change solely through dβ according to dN In /dt = (πR 3 /Ω In )(1 + cosβ) −2 (dβ/dt) 2 [41].…”

Section: Resultsmentioning

confidence: 99%

“…InSb has the smallest band gap, the highest electron mobility and the largest thermo-power figure of merit among the entire family of III-V semiconductor compounds [1,2], which makes this material ideal for various applications in high speed electronics and photonics. Unfortunately, however, epitaxial growth of InSb in the form of two-dimensional layers is challenging due to its large lattice mismatch with common semiconductor substrates [3,4]. There have been many efforts to grow InSb in the form of nanowires (NWs) on both on InSb substrates [5] and on lattice-mismatched substrates such as Si and InAs [6][7][8][9][10][11][12][13], which enables a radical improvement of its crystalline quality and may pave new ways to fabricate InSb-based devices.…”

Section: Introductionmentioning

confidence: 99%

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Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory

et al. 2020

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The growth mechanisms of self-catalyzed InAs/InSb axial nanowire heterostructures are thoroughly investigated as a function of the In and Sb line pressures and growth time. Some interesting phenomena are observed and analyzed. In particular, the presence of In droplet on top of InSb segment is shown to be essential for forming axial heterostructures in the self-catalyzed vapor-liquid-solid mode. Axial versus radial growth rates of InSb segment are investigated under different growth conditions and described within a dedicated model containing no free parameters. It is shown that widening of InSb segment with respect to InAs stem is controlled by the vapor-solid growth on the nanowire sidewalls rather than by the droplet swelling. The In droplet can even shrink smaller than the nanowire facet under Sb-rich conditions. These results shed more light on the growth mechanisms of self-catalyzed heterostructures and give clear route for engineering the morphology of InAs/InSb axial nanowire heterostructures for different applications.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory

et al. 2020

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“…This typically requires careful polishing to ensure that the active layer is sufficiently flat and thin. Epitaxial growth processes [8], such as liquid phase epitaxy (LPE) [9], pulsed laser deposition [10], molecular beam epitaxy (MBE) [11], hydrothermal epitaxy [12], metal oxide chemical vapor deposition (MOCVD) [13], and halide vapor phase epitaxy (HVPE) [14], enable the production of high-quality crystalline materials, which are practical for waveguide fabrication.…”

Section: Introductionmentioning

confidence: 99%

“…The thickness of the waveguide structure can be controlled accurately by the growth duration and growth temperature. Finally, liquid phase epitaxy is adaptable for any single crystalline layer or active dopant, using an appropriate flux system and growth conditions [8].…”

Section: Introductionmentioning

confidence: 99%

Liquid-Phase Epitaxial Growth and Characterization of Nd:YAl3(BO3)4 Optical Waveguides

Dekker

Dawes

2019

Crystals

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We investigated the fabrication of neodymium doped thin film optical waveguide-based devices as potential active sources for planar integrated optics. Liquid-phase epitaxial growth was used to fabricate neodymium-doped yttrium aluminum borate films on compatible lattice-matched, un-doped yttrium aluminum borate substrates. We observed the refractive index contrast of the doped and un-doped crystal layers via differential interference contrast microscopy. In addition, characterization by X-ray powder diffraction, optical absorption and luminescence spectra demonstrated the crystal quality, uniformity and optical guiding of the resulting thin films.

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“…For instance, metals can epitaxially grow on metal oxides through atomic layer deposition [15], pulsed laser deposition [17], UHV sputtering deposition [18][19][20][21], and annealing [22]. Unfortunately, vapor-phase deposition techniques suffer from several disadvantages, such as the requirement of ultra-high vacuum conditions and the use of special equipment [23]. Furthermore, most of the vapor-phase deposition techniques only work for planar surfaces and cannot be applied to deposit metal/alloy nanoparticles onto high-surface-area supports.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Anchored Bimetallic Catalysts via Epitaxy

et al. 2016

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Abstract:The development of thermodynamically stable supported bimetallic catalysts for high-temperature reaction is significant and highly desirable but remains a grand challenge. In this work, we report a novel approach that relies on the interaction of metal nanoparticles with the support material to form unique bimetallic nanoparticles, which epitaxially anchor onto the support surface. Such unique nanostructured systems are catalytically active and ultrastable during selected catalytic reactions. In this paper, we describe the synthesis processes of ultrastable PtZn nanoparticles epitaxially anchored onto ZnO nanowires, which primarily consist of {10´10} nanoscale facets. Such anchored PtZn nanoparticles demonstrated good stability during high temperature treatments and selected catalytic reactions. The synthesis approach reported in this work provides a new strategy to develop thermodynamically stable supported bimetallic catalysts.

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Epitaxial Crystal Growth: Methods and Materials

Cited by 16 publications

References 109 publications

Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory

Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory

Liquid-Phase Epitaxial Growth and Characterization of Nd:YAl3(BO3)4 Optical Waveguides

Synthesis of Anchored Bimetallic Catalysts via Epitaxy

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