Epitaxial C60 thin films on Bi(0001)

Sadowski, Jerzy; Bakhtizin, R. Z.; Oreshkin, A. I.; Nishihara, Takaharu; Abdullah, Amir; Fujikawa, Y.; Nakajima, Kiyomi; Sakurai, T.

doi:10.1016/j.susc.2007.10.005

Cited by 18 publications

(10 citation statements)

References 16 publications

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“…17,18 C 60 thin films grow epitaxially on well-defined metallic substrates, 19,20 but island growth occurs on relatively weak interacting substrates. 21 For growth on quartz substrates such a weak substrate-molecule interaction would reduce the crystallographic ordering of the C 60 molecules and hence lead to a reduced step edge barrier and a low ␤ value.…”

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confidence: 99%

Growth dynamics of C60 thin films: Effect of molecular structure

Yim

Jones

2009

Applied Physics Letters

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The surface morphology and growth behavior of fullerene thin films have been studied by atomic force microscopy and height difference correlation function analysis. In contrast to the large growth exponents (β) previously reported for other organic semiconductor thin-film materials, a relatively small β value of 0.39±0.10 was determined. Simulations of (1+1)-dimensional surface lateral diffusion models indicate that the evolution of deep grain boundaries leads to a rapid increase in β. We suggest that the commonly observed large β values for organic thin films are due to their intrinsically anisotropic molecular structures and hence different stacking directions between crystallite domains.

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confidence: 99%

Growth dynamics of C60 thin films: Effect of molecular structure

Yim

Jones

2009

Applied Physics Letters

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“…The packing of the C 60 molecules has a similar in-plane lattice parameter as a bulk fcc(111) C 60 crystal. [45] The PTCDA molecules arrange in the well-known herringbone structure [27] covering part of the Bi(111) surface. Depending on the quality of the STM tip, the herringbone structure may not be resolved in the topography (Fig.…”

Section: Ballistic Electron Emission Microscopymentioning

confidence: 99%

Electron Transport at Surfaces and Interfaces

Bobisch¹,

Möller²

2012

Chimia

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Here we present two techniques which give insight on transport phenomena with atomic resolution. Ballistic electron emission microscopy is used to study the ballistic transport through layered heterogeneous systems. The measured ballistic fraction of the tunneling current provides information about lossless transport channels through metallic layers and organic adsorbates. The transport characteristics of Bi(111)/Si Schottky devices and the influence of the organic adsorbates perylene tetracaboxylic dianhydride acid and C(60) on the ballistic current are discussed. Scanning tunneling potentiometry gives access to the lateral transport along a surface, thus scattering processes within two-dimensional electron systems for the Bi(111) surface and the Si(111)(√3 × √3)-Ag surface could be visualized.

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“…It is found that thin lms of organic molecules grown on a semi-metallic Bi(111) surface shows a lot of interesting phenomena, such as the ordered crystalline layer with the standing-up orientation of pentacene molecules, 32 the chiral self-assembly of rubrene molecules, 33 structural transitions in different monolayers of cobalt phthalocyanine lms, 34 and the Moire' pattern in C 60 thin lms. 35 In this study, we use Bi(111) as the substrate and studied the structure transition of the C 60 monolayer. C 60 molecules were deposited at 100 K form local-order structures.…”

Section: Introductionmentioning

confidence: 99%