Epitaxial barium hexaferrite on sapphire by sputter deposition

Yuan, Mingquan; Glass, H. L.; Adkins, L. R.

doi:10.1063/1.100601

Cited by 84 publications

(35 citation statements)

References 6 publications

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“…2,3 As mentioned earlier, our study on amorphous fused quartz and Si͑111͒ substrates showed that the films prepared on two substrates under similar conditions showed similar properties. 17,18 To further check this point we show a comparative study of the films deposited on different kinds of substrates.…”

Section: The Effect Of Substrate Materialsmentioning

confidence: 59%

“…M -type barium ferrite ͑BaM͒ films with c-axis oriented normal to the film plane have been reported by different workers. [1][2][3][4][5][6][7][8][9] These films have been deposited using different deposition techniques such as dc and rf diode sputtering, targets facing type sputtering, laser ablation, etc. 4 -7 These films have been crystallized either by in situ heating of substrates or postdeposition annealing of the films.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] M -type ferrites have a large uniaxial magnetocrystalline anisotropy and generally the hexagonal c axis is the easy axis of magnetization. Hence, there has been interest in depositing these films having c-axis orientation.…”

Section: Introductionmentioning

confidence: 99%

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The effect of deposition and annealing conditions on textured growth of sputter-deposited strontium ferrite films on different substrates

Acharya

Prasad

Venkataramani

et al. 1996

Journal of Applied Physics

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M -type strontium ferrite films were prepared by radio-frequency ͑rf͒ sputtering on fused quartz substrates using different deposition conditions and were subjected to two different types of annealing treatments. The study showed that in addition to the deposition conditions such as rf power, oxygen to argon ratio in the sputtering gas, and target to substrate distance, the postdeposition annealing conditions also play an important role in determining the texture and properties of the films. The films with random orientation or with preferred c-axis orientation either normal to the film plane or in the film plane could be deposited depending on the process parameters chosen. The study carried out by depositing these films on different substrates such as Si͑100͒, Si͑111͒, sapphire͑110͒, and Gd 3 Ga 5 O 12 ͑111͒ showed that though the nature of the substrates plays a role in determining the texture and properties of the films, such effects are less dominant in comparison to the effect of deposition and annealing conditions in the case of strontium ferrite films.

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Section: The Effect Of Substrate Materialsmentioning

confidence: 59%

Section: Introductionmentioning

confidence: 99%

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The effect of deposition and annealing conditions on textured growth of sputter-deposited strontium ferrite films on different substrates

Acharya

Prasad

Venkataramani

et al. 1996

Journal of Applied Physics

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“…7,8,9,10,31,35,36 Sapphire is chosen because it has a rhombohedral crystal structure (a=5.128 Å and =5522′) which is close to the hexagonal structure of BaM; 31 and the mismatches of the lattice parameters and thermal expansion coefficients between sapphire and BaM materials are relatively small. 7,31,36 Certain device applications, however, require the growth of BaM films on conductive substrates. In coupled-line and stripline-type devices, for example, a ground plane is needed underneath the active layer.…”

Section: Deposition Of Bam Thin Films On Metallic Electrodesmentioning

confidence: 99%

“…30 A variety of different techniques have been used to fabricate BaM film materials. These include pulsed laser deposition (PLD), 7,8,9,10,11,12,28,31 liquid phase epitaxy (LPE), 32,33,34,35 RF magnetron sputtering, 36,37,19,38,39,40 molecular beam epitaxy (MBE), 14 metallo-organic decomposition (MOD), 15 chemical vapor deposition (CVD), 41 and screen printing. 16,17 The device demonstration includes both numerical 20,21,22 and experimental efforts.…”

Section: Introductionmentioning

confidence: 99%

M-Type Barium Hexagonal Ferrite Films

Wu¹

2012

Advanced Magnetic Materials

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Hard Ferrite Films Prepared by Electron Beam Evaporation for Microwave Applications

Wane

Cosset

Bessaudou

et al. 2000

Interface Controlled Materials

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In classic circulators, exterior permanent magnet is used for biasing the ferrite. In the MMICcompatible circulators, self-biased ferrites are needed [1]. To be used as film, the permanent magnet material must have good properties at microwave frequencies. This particular ferrites are hexaferrites and the most commonly used are barium and strontium ferrites.This work deals with the study of barium hexaferrite films high rate deposition. The bulk material deposited has the formula BaFe 12 O 19 . The films are grown on silicon (100) substrate. To increase adhesion and minimise cracks on the ferrite films, we deposit first one or two thin (≈ 1 µm) metallic films. A preliminary study shows that ferrite films deposited on a gold and palladium alloy underlayer are more adhesive than those on silicon. Secondly we use metallic underlayer more compatible with microwave frequencies. It can be Gold (Au), Copper (Cu), Gold on Titanium (Au/Ti) or Copper on Titanium (Cu/Ti). The metallic layers play also a role of ground plane in the circulator circuit (see figure 1). The Ti layer is used to improve adhesion of Au or Cu layers on silicon (100) substrate. The metallic layers are grown by dc cathodic magnetron sputtering. Figure 1 : Circulator's topologyThe technology used to deposit the Ba-M ferrite is electron beam evaporation which allows high deposition rates [2]. Indeed, acceptable coating thickness for circulator operating at lower millimeter wave frequencies should approach 100 µm to obtain low losses [3]. The growth rates obtained are typically in the 1 to 40 µm per hour range depending on deposition parameters.The growth parameters studied are deposition rate, oxygen flow, substrate temperature and post-deposition annealing. The effect of these parameters on crystallographic structure, magnetic properties, morphology and composition has been investigated.The crystallographic structure is analysed by XRD with a SIEMENS generator equipped with a goniometer. The saturation magnetisation (4πM s ), coercive field (H c ) and remanent ratio (RR) are measured using a hysteresismeter M2100 with a DC magnetic field applied in the film plane. Morphology and composition of the deposited films are measured by Scanning Electron Microscopy (SEM) equipped with a X-Ray Dispersion analysis system. 5 : circuit's ground plane 4 : substrate 3 : circulator's ground plane 2 : ferrite film 1 : top armature Interface Controlled Materials. Edited by M. Rühle and H. Gleiter

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Epitaxial barium hexaferrite on sapphire by sputter deposition

Cited by 84 publications

References 6 publications

The effect of deposition and annealing conditions on textured growth of sputter-deposited strontium ferrite films on different substrates

The effect of deposition and annealing conditions on textured growth of sputter-deposited strontium ferrite films on different substrates

M-Type Barium Hexagonal Ferrite Films

Hard Ferrite Films Prepared by Electron Beam Evaporation for Microwave Applications

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