Coherent epitaxial growth allows us to produce strained crystalline films with structures that are unstable in the bulk. Thereby, the overlayer lattice parameters in the interface plane, (a, b), determine the minimum-energy out-of-plane lattice parameter, c a b ( , ) min . We show by means of density-functional total energy calculations that this dependence can be discontinuous and predict related firstorder phase transitions in strained tetragonal films of the elements V, Nb, Ru, La, Os, and Ir. The abrupt change of c min can be exploited to switch properties specific to the overlayer material. This is demonstrated for the example of the superconducting critical temperature of a vanadium film which we predict to jump by 20% at a discontinuity of c min .
MethodWe model the structures of the considered films by the epitaxial Bain path (EBP) [11]. The EBP model applies to the bulk part (i.e., the interior) of a coherently grown thick film [12]. It assumes that the film can be described by OPEN ACCESS RECEIVED