Epitaxial and layer-by-layer growth of EuO thin films on yttria-stabilized cubic zirconia (001) using MBE distillation

Sutarto, Ronny; Altendorf, S. G.; Coloru, B.; Sala, M. Moretti; Haupricht, T.; Chang, C. F.; Hu, Z.; Schüßler-Langeheine, C.; Hollmann, N.; Kierspel, H.; Hsieh, H. H.; Lin, Hong‐Ji; Chen, C. T.; Tjeng, L. H.

doi:10.1103/physrevb.79.205318

Cited by 82 publications

(40 citation statements)

References 47 publications

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“…1a 21,22 . Note that these dopant electrons do not form excitons, but rather occupy the Gd 5d impurity orbitals, which in the metallic phase below T C merge with the Eu 5d6s conduction band 23 to produce a long-range RKKY contribution to J ex .…”

Section: Resultsmentioning

confidence: 99%

Ultrafast optical tuning of ferromagnetism via the carrier density

et al. 2015

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Interest in manipulating the magnetic order by ultrashort laser pulses has thrived since it was observed that such pulses can be used to alter the magnetization on a sub-picosecond timescale. Usually this involves demagnetization by laser heating or, in rare cases, a transient increase of magnetization. Here we demonstrate a mechanism that allows the magnetic order of a material to be enhanced or attenuated at will. This is possible in systems simultaneously possessing a low, tunable density of conduction band carriers and a high density of magnetic moments. In such systems, the thermalization time can be set such that adiabatic processes dominate the photoinduced change of the magnetic order-the three-temperature model for interacting thermalized electron, spin and lattice reservoirs is bypassed. In ferromagnetic Eu 1 À x Gd x O, we thereby demonstrate the strengthening as well as the weakening of the magnetic order by B10% and within r3 ps by optically controlling the magnetic exchange interaction.

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Section: Resultsmentioning

confidence: 99%

Ultrafast optical tuning of ferromagnetism via the carrier density

et al. 2015

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“…To better understand this behavior, we compare with single crystal EuO on lattice-matched YSZ(001). 21,22 Fig. 4 (d) shows the Raman spectra for EuO/SLG and EuO/YSZ around the graphene 2D peak.…”

Section: Resultsmentioning

confidence: 99%

“…This ensures proper stoichiometry of the EuO film. [19][20][21][22][23] If the oxygen partial pressure is increased, the EuO growth rate increases until a critical O 2 pressure is reached and Eu 2 O 3 forms. In this way, the growth rate is determined by the oxygen pressure and is termed adsorption-controlled (distillation) and oxygen-limited.…”

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confidence: 99%

Integration of the Ferromagnetic Insulator EuO onto Graphene

et al. 2012

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We have demonstrated the deposition of EuO films on graphene by reactive molecular beam epitaxy in a special adsorption-controlled and oxygen-limited regime, which is a critical advance toward the realization of the exchange proximity interaction (EPI). It has been predicted that when the ferromagnetic insulator (FMI) EuO is brought into contact with graphene, an overlap of electronic wave functions at the FMI/graphene interface can induce a large spin splitting inside the graphene. Experimental realization of this effect could lead to new routes for spin manipulation, which is a necessary requirement for a functional spin transistor. Furthermore, EPI could lead to novel spintronic behavior such as controllable magnetoresistance, gate tunable exchange bias, and quantized anomalous Hall effect. However, experimentally, EuO has not yet been integrated onto graphene. Here we report the successful growth of high-quality crystalline EuO on highly oriented pyrolytic graphite and single-layer graphene. The epitaxial EuO layers have (001) orientation and do not induce an observable D peak (defect) in the Raman spectra. Magneto-optic measurements indicate ferromagnetism with a Curie temperature of 69 K, which is the value for bulk EuO. Transport measurements on exfoliated graphene before and after EuO deposition indicate only a slight decrease in mobility.

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“…An established method for the growth of stoichiometric EuO films is the distillation technique 6,8,18,19 where MBE is carried out at elevated substrate temperatures under Eu excess. The surplus Eu is re-evaporated and the formation of compounds with a lower Eu-content (e.g., Eu 2 O 3 ) is avoided.…”

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confidence: 99%

Structure and magnetic properties of ultra thin textured EuO films on graphene

Klinkhammer

Förster

Schumacher

et al. 2013

Applied Physics Letters

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We present a straightforward and reproducible method to grow stoichiometric and single phase (100) textured EuO thin films on epitaxial graphene. Depending on coverage, either separated EuO grains or fully closed layers can be prepared. Room temperature preparation followed by annealing in Eu vapor leads to a random distribution of the in-plane orientation, whereas growth under distillation conditions at 720 K induces a fixed orientation with respect to the substrate. Magneto-optical Kerr effect (MOKE) shows that the films are ferromagnetic with an enhanced Curie temperature.

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Epitaxial and layer-by-layer growth of EuO thin films on yttria-stabilized cubic zirconia (001) using MBE distillation

Cited by 82 publications

References 47 publications

Ultrafast optical tuning of ferromagnetism via the carrier density

Ultrafast optical tuning of ferromagnetism via the carrier density

Integration of the Ferromagnetic Insulator EuO onto Graphene

Structure and magnetic properties of ultra thin textured EuO films on graphene

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