Epitaxial ALD BeO: Efficient Oxygen Diffusion Barrier for EOT Scaling and Reliability Improvement

Yum, Jung Hwan; Bersuker, G.; Akyol, T.; Ferrer, Domingo; Lei, Ming; Park, Keun Woo; Hudnall, Todd W.; Downer, M. C.; Bielawski, Christopher W.; Yu, Edward T.; Price, Jonathan G.; Lee, J. C.; Banerjee, Sanjay K.

doi:10.1109/ted.2011.2170073

Cited by 23 publications

(23 citation statements)

References 25 publications

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“…Some previous IPE studies have reported a widening of the Al 2 O 3 gap, and an accompanying increase in VBO, accompanying PDA at >800 °C 29. On the other hand, a recent spectroscopic ellipsometry study reported a decrease in the Al 2 O 3 gap accompanying similar PDA 30. Extension of the tuning ranges of our IMPE‐EFISH and IPE measurements may therefore be a fruitful area for future research on Al 2 O 3 and other wide gap oxides.…”

Section: Resultssupporting

confidence: 55%

Band offsets of atomic layer deposited Al₂O₃ and HfO₂ on Si measured by linear and nonlinear internal photoemission

Lei

Yum

Banerjee

et al. 2012

Physica Status Solidi (b)

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Phone: þ1 512 471 6054, Fax: þ1 512 471 9637, Web: www.ph.utexas.edu/person/downer_mikeWe present measurements of band alignment of atomic layer deposited high-k dielectrics on Si(100) using linear internal photoemission (IPE), detected by measuring photocurrent from a biased MOS capacitor, and internal multi-photon photoemission (IMPE), detected by optical second-harmonic generation (SHG). In IPE, Band offsets are extracted from either the threshold of quantum yield; in IMPE, they are determined by detecting discrete increments in multi-photon order. IPE and IMPE yielded identical conduction band (CB) offsets (2.0 eV) for as-deposited Si/Al 2 O 3 structures with 10 and 3 nm oxides, respectively, in excellent agreement with previous measurements of annealed structures. Band offset measurements for Si/HfO 2 , on the other hand, show a strong (0.3 eV) upshift of the oxide valence band (VB) maximum, and an equal decrease of the oxide band gap upon post-deposition annealing (PDA) at 600 8C, while the CB offset remains unchanged. We attribute the shift of the VB edge to thermally driven oxygen diffusion away from the Si/HfO 2 interface.

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Section: Resultssupporting

confidence: 55%

Band offsets of atomic layer deposited Al₂O₃ and HfO₂ on Si measured by linear and nonlinear internal photoemission

Lei

Yum

Banerjee

et al. 2012

Physica Status Solidi (b)

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“…The atomic-layer-deposited w-BeO was fabricated on Si substrates and employed as a diffusion barrier of oxygen between Si and high-κ dielectrics such as HfO 2 . 24 However, w-BeO has a very small κ of~7. Experimental E g (eV) been applied in microelectronic devices to date as far as we are aware.…”

Section: Total Property Mapmentioning

confidence: 99%

Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations

et al. 2015

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As the scale of transistors and capacitors in electronics is reduced to less than a few nanometers, leakage currents pose a serious problem to the device's reliability. To overcome this dilemma, high-κ materials that exhibit a larger permittivity and band gap are introduced as gate dielectrics to enhance both the capacitance and block leakage simultaneously. Currently, HfO 2 is widely used as a high-κ dielectric; however, a higher-κ material remains desired for further enhancement. To find new high-κ materials, we conduct a high-throughput ab initio calculation for band gap and permittivity. The accurate and efficient calculation is enabled by newly developed automation codes that fully automate a series of delicate methods in a highly optimized manner. We can, thus, calculate 41800 structures of binary and ternary oxides from the Inorganic Crystal Structure Database and obtain a total property map. We confirm that the inverse correlation relationship between the band gap and permittivity is roughly valid for most oxides. However, new candidate materials exhibit interesting properties, such as large permittivity, despite their large band gaps. Analyzing these materials, we discuss the origin of large κ values and suggest design rules to find new high-κ materials that have not yet been discovered.

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“…To date, BeO has mostly been produced as an amorphous powder and sintered into larger shapes for heat dissipation applications. Thin film studies of BeO for the application of front‐end processes of complementary metal–oxide–semiconductors (CMOS) have recently begun . Physical properties, such as thermal conductivity, bandgap energy, and the dielectric constant, can be best utilized as gate insulators for power and logic semiconductor devices that require heat dissipation and leakage current troubleshooting.…”

Section: Introductionmentioning

confidence: 99%

“…Thin film oxides growing in a single crystal can reduce recombination sites and Coulomb scattering caused by crystal defects . Recently, BeO thin films on Si (100) were demonstrated by atomic layer deposition (ALD) at low temperatures (200‐250°C) for the interfacial passivation layers of metal‐oxide‐semiconductor field‐effect transistors (MOSFET) . Polycrystalline BeO‐on‐Si (100) was grown with the crystal orientation of wurtzite (101) because of the large lattice mismatch (50.3%) between BeO (α BeO = 2.698 Å) and Si (α Si = 5.431 Å) atoms.…”

Section: Introductionmentioning

confidence: 99%

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Domain epitaxy of crystalline BeO films on GaN and ZnO substrates

et al. 2018

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We demonstrated the growth of wurtzite‐crystalline beryllium oxide (BeO) thin films on GaN and ZnO substrates using atomic layer deposition (ALD). Single‐crystalline BeO were epitaxially grown on GaN. Despite the inherently large lattice mismatch of BeO and GaN atoms, the 6/5 and 7/6 domain‐matched structures dramatically reduced the residual strain in BeO thin films. On the other hand, the lattice mismatch of BeO and ZnO was not effectively accommodated in the mixed domains. X‐ray diffraction (XRD) confirmed the in‐plane crystallization of BeO‐on‐substrates in the (002){102}BeO||(002){102}Sub orientation and relaxation degrees of 20.8% (GaN), 100% (ZnO). The theoretical critical thicknesses of BeO for strain relaxation were 2.2 μm (GaN) and 1.6 nm (ZnO), calculated using a total film energy model. Transmission electron microscopy (TEM) and Fourier‐filtered imaging supported the bonding configuration and crystallinity of wurtzite BeO thin films on GaN and ZnO substrates.

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Epitaxial ALD BeO: Efficient Oxygen Diffusion Barrier for EOT Scaling and Reliability Improvement

Cited by 23 publications

References 25 publications

Band offsets of atomic layer deposited Al₂O₃ and HfO₂ on Si measured by linear and nonlinear internal photoemission

Band offsets of atomic layer deposited Al₂O₃ and HfO₂ on Si measured by linear and nonlinear internal photoemission

Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations

Domain epitaxy of crystalline BeO films on GaN and ZnO substrates

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Epitaxial ALD BeO: Efficient Oxygen Diffusion Barrier for EOT Scaling and Reliability Improvement

Cited by 23 publications

References 25 publications

Band offsets of atomic layer deposited Al2O3 and HfO2 on Si measured by linear and nonlinear internal photoemission

Band offsets of atomic layer deposited Al2O3 and HfO2 on Si measured by linear and nonlinear internal photoemission

Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations

Domain epitaxy of crystalline BeO films on GaN and ZnO substrates

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Band offsets of atomic layer deposited Al₂O₃ and HfO₂ on Si measured by linear and nonlinear internal photoemission

Band offsets of atomic layer deposited Al₂O₃ and HfO₂ on Si measured by linear and nonlinear internal photoemission