Environmentally Friendly InP-Based Quantum Dots for Efficient Wide Color Gamut Displays

Jang, Eunjoo; Kim, Yongwook; Won, Yong Hyub; Jang, Hongje; Choi, Sang Joon

doi:10.1021/acsenergylett.9b02851

Cited by 162 publications

(187 citation statements)

References 64 publications

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“…In internally structured quantum dots control of band gap and alignment of band edges has made huge progress in the last years, allowing for instance the use of defects for broad band luminescence by internal diffusion processes [17] or electrical pumping of quantum dots by using graded so-called "giant" shells around CdSe cores [18]. Thick graded shells with proper alignment are also key to replace the near-perfect but toxic CdSe cores by environmentally more benign materials like InP [19], but it was also pointed out, that the control of surface defects as traps for electrons as well as holes is key to high efficiency [20]. The most general case in this context are ternary or quaternary semiconductors, which often allow tuning band edges simply by adjustment of the stoichiometry [21], but still need protective shells like the ZnS that is used in this study as proxy for other materials.…”

Section: Semiconductor Compositesmentioning

confidence: 99%

Tuning the Optical Band Gap of Semiconductor Nanocomposites—A Case Study with ZnS/Carbon

2020

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The linear photochemical response of materials depends on two critical parameters: the size of the optical band gap determines the onset of optical excitation, whereas the absolute energetic positions of the band edges define the reductive or oxidative character of photo-generated electrons and holes. Tuning these characteristics is necessary for many potential applications and can be achieved through changes in the bulk composition or particle size, adjustment of the surface chemistry or the application of electrostatic fields. In this contribution the influence of surface chemistry and fields is investigated systematically with the help of standard DFT calculations for a typical case, namely composites prepared from ZnS quantum dots and functionalized carbon nanotubes. After comparing results with existing qualitative and quantitative experimental data, it is shown conclusively, that the details of the surface chemistry (especially defects) in combination with electrostatic fields have the largest influence. In conclusion, the development of novel or improved photoresponsive materials therefore will have to integrate a careful analysis of the interplay between surface chemistry, surface charges and interaction with the material environment or substrate.

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Section: Semiconductor Compositesmentioning

confidence: 99%

Tuning the Optical Band Gap of Semiconductor Nanocomposites—A Case Study with ZnS/Carbon

2020

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“…The InP/ZnS core/shell QDs have been widely revealed to have a quantum well‐like type‐I band structure. [ 26 , 34 , 35 , 36 ] The valence band and conduction band of the InP‐core are estimated to be about 6.0 and 4.1 eV, respectively. [ 37 ] The pentacene has a valence band of 5.0 eV and a conduction band of 3.2 eV.…”

Section: Resultsmentioning

confidence: 99%

“…[ 14 ] The thin ZnS shell would have a very large bandgap due to the quantum confinement effect, with a conduction band above the pentacene and a valence band lower than InP‐core. [ 36 ] A negative V G leads to the accumulation of holes in the pentacene due to the capacitive coupling effect. The holes can overcome the energy barrier formed by the ZnS shell as well as the unfavorable valence band alignment between the pentacene and InP‐core and get injected into the InP‐core (Figure 3e ).…”

Section: Resultsmentioning

confidence: 99%

Ambipolar Charge Storage in Type‐I Core/Shell Semiconductor Quantum Dots toward Optoelectronic Transistor‐Based Memories

Wen

et al. 2021

Advanced Science

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Efficient charge storage media play a pivotal role in transistor‐based memories and thus are under intense research. In this work, the charge storage ability of type‐I InP/ZnS core/shell quantum dots is well revealed through studying a pentacene‐based organic transistor with the quantum dots (QDs) integrated. The quantum well‐like energy band structure enables the QDs to directly confine either holes or electrons in the core, signifying a dielectric layer‐free nonvolatile memory. Especially, the QDs in this device can be charged by electrons using light illumination as the exclusive method. The electron charging process is ascribed to the photoexcitation process in the InP‐core and the hot holes induced. The QDs layer demonstrates an electron storage density of ≈5.0 × 1011 cm−2 and a hole storage density of ≈6.4 × 1011 cm−2. Resultingly, the output device shows a fast response speed to gate voltage (10 µs), large memory window (42 V), good retention (>4.0 × 104 s), and reliable endurance. This work suggests that the core/shell quantum dot as a kind of charge storage medium is of great promise for optoelectronic memories.

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“…Colloidal quantum dots (CQDs) have attracted considerable interest as light-emitting materials because of their facile color tunability, high color purity, and high quantum efficiency. [142][143][144] Once their surfaces are passivated using organic ligands, CQDs become suitable for use in printing processes. The first report of EHD jet printing of CdSe/ZnS and CdSe/CdsS CQDs on flat and structured substrates used nanodrip mode.…”

Section: Materials Advances Accepted Manuscriptmentioning

confidence: 99%

Overview of recent progress in electrohydrodynamic jet printing in practical printed electronics: focus on the variety of printable materials for each component

et al. 2021

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Environmentally Friendly InP-Based Quantum Dots for Efficient Wide Color Gamut Displays

Cited by 162 publications

References 64 publications

Tuning the Optical Band Gap of Semiconductor Nanocomposites—A Case Study with ZnS/Carbon

Tuning the Optical Band Gap of Semiconductor Nanocomposites—A Case Study with ZnS/Carbon

Ambipolar Charge Storage in Type‐I Core/Shell Semiconductor Quantum Dots toward Optoelectronic Transistor‐Based Memories

Overview of recent progress in electrohydrodynamic jet printing in practical printed electronics: focus on the variety of printable materials for each component

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