“…[4] The I-V hysteresis in PSCs is related to the unbalanced photoexcited electrons and holes, ferroelectric polarization, ion migration, charge carrier trapping, transient capacitive current, and so on. [7][8][9][10][11] Thus, it would be highly demanded to obtain high-efficient, hysteresis-less even hysteresis-free, and simultaneously stable PSCs by developing an effective methodology for precise perovskite film amelioration.The addition of a tiny amount of chemical additives in the perovskite precursor solution has been widely demonstrated as one of the most effective strategies to control the crystallization process, [12,13] like grain size or morphology of perovskite thin film, thus enhancing the PCE of the PSC devices. It has been demonstrated that high-quality perovskite thin films play a vital role in obtaining highperformance PSCs with excellent stability since the surface morphology and crystallization behavior of perovskite thin films can significantly affect the photoelectric characteristics, such as the charge carrier mobility, charge separation and collection efficiencies, recombination mechanics, lifetime, and diffusion-length of perovskite thin films.…”